• Title/Summary/Keyword: Solution film thickness

검색결과 376건 처리시간 0.034초

Numerical Analysis of Damping Effect of Liquid Film on Material in High Speed Liquid Droplet Impingement

  • Sasaki, Hirotoshi;Ochiai, Naoya;Iga, Yuka
    • International Journal of Fluid Machinery and Systems
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    • 제9권1호
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    • pp.57-65
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    • 2016
  • By high speed Liquid Droplet Impingement (LDI) on material, fluid systems are seriously damaged, therefore, it is important for the solution of the erosion problem of fluid systems to consider the effect of material in LDI. In this study, by using an in-house fluid/material two-way coupled method which considers reflection and transmission of pressure, stress and velocity on the fluid/material interface, high-speed LDI on wet/dry material surface is simulated. As a result, in the case of LDI on wet surface, maximum equivalent stress are less than those of dry surface due to damping effect of liquid film. Empirical formula of the damping effect function is formulated with the fluid factors of LDI, which are impingement velocity, droplet diameter and thickness of liquid film on material surface.

프레스 압력 변화에 따른 PZT 후막의 전기적 특성 (The electric properties of PZT thick film by pressure variation)

  • 강정민;조현무;이성갑;이상헌;박상만
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.177-179
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    • 2004
  • $Pb(Zr_{0.4},Ti_{0.6})O3$, $Pb(Zr_{0.6},Ti_{0.4})O_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $100{\sim}120{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$ were approximately 676 and 1.4%, respectively.

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극박형 복합재료 필름의 표면 물성 분석에 대한 연구 (Analysis of Surface Characteristics for Clad Thin Film Materials)

  • 이준하
    • 반도체디스플레이기술학회지
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    • 제17권1호
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    • pp.62-65
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    • 2018
  • In the era of the 4th Industrial Revolution, IoT products of various and specialized fields are being developed and produced. Especially, the generation of the artificial intelligence, robotic technology Multilayer substrates and packaging technologies in the notebook, mobile device, display and semiconductor component industries are demanding the need for flexible materials along with miniaturization and thinning. To do this, this work use FCCL (Flexible Copper Clad Laminate), which is a flexible printed circuit board (PCB), to implement FPCB (Flexible PCB), COF (Chip on Film) Use is known to be essential. In this paper, I propose a transfer device which prevents the occurrence of scratches by analyzing the mechanism of wrinkle and scratch mechanism during the transfer process of thin film material in which the thickness increases while continuously moving in air or solution.

인산 및 규산 이온이 포함된 수용액에서 AZ31 마그네슘 합금의 플라즈마 전해산화 피막의 구조에 미치는 수산화나트륨 농도의 영향 (Effects of NaOH Concentration on the Structure of PEO Films Formed on AZ31 Mg Alloy in PO43- and SiO32- Containing Aqueous Solution)

  • 권두영;문성모
    • 한국표면공학회지
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    • 제49권1호
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    • pp.46-53
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    • 2016
  • The structure of plasma electrolytic oxidation (PEO) coatings was investigated as a function of NaOH concentration in 0.06 M $Na_2SiO_3$ + 0.06 M $Na_3PO_4$ solution by using SEM and epoxy replica method. The PEO film was formed on AZ31 Mg alloy by the application of anodic pulse current with 0.2 ms width and its formation behavior was studied by voltage-time curves during the formation of PEO films. It was found that the addition of NaOH into $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ containing aqueous solution causes a decrease in the PEO film formation voltage, suggesting that dielectric breakdown of the PEO becomes easier with increasing $OH^-$ ion concentration in the solution. With increasing $OH^-$ ion concentration, thickness of the PEO film increased and surface roughness decreased. The size of pores formed in the PEO layer became smaller and the number of cracks in the PEO layer increased with increasing $OH^-$ ion concentration. Based on the experimental results obtained in the work, it is suggested that $OH^-$ ions in the solution can contribute not only to the dielectric breakdown but also to the formation of PEO films in the presence of $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ ions in the solution.

The Kinetics of Anodic Dissolution and Repassivation on 316L Stainless Steel in Borate Buffer Solution Studied by Abrading Electrode Technique

  • Xu, H.S.;Sun, D.B.;Yu, H.Y.;Meng, H.M.
    • Corrosion Science and Technology
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    • 제14권6호
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    • pp.261-266
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    • 2015
  • The capacity of passive metal to repassivate after film damage determines the development of local corrosion and the resistance to corrosion failures. In this work, the repassivation kinetics of 316L stainless steel (316L SS) was investigated in borate buffer solution (pH 9.1) using a novel abrading electrode technique. The repassivation kinetics was analyzed in terms of the current density flowing from freshly bare 316L SS surface as measured by a potentiostatic method. During the early phase of decay (t < 2 s), according to the Avrami kinetics-based film growth model, the transient current was separated into anodic dissolution ($i_{diss}$) and film formation ($i_{film}$) components and analyzed individually. The film reformation rate and thickness were compared according to applied potential. Anodic dissolution initially dominated the repassivation for a short time, and the amount of dissolution increased with increasing applied potential in the passive region. Film growth at higher potentials occurred more rapidly compared to at lower potentials. Increasing the applied potential from 0 $V_{SCE}$ to 0.8 $V_{SCE}$ resulted in a thicker passive film (0.12 to 0.52 nm). If the oxide monolayer covered the entire bare surface (${\theta}=1$), the electric field strength through the thin passive film reached $1.6{\times}10^7V/cm$.

Solution 코팅횟수에 따른 PZT(80/20)후막의 특성 (Properties of PZT(80/20) Thick Films with the Variation of the Number of Solution Coatings)

  • 박상만;이성갑;이영희;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1418-1419
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    • 2006
  • PZT(80/20) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precursor solution was spin-coated on the multilayered thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about 60-65 ${\mu}m$. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT-6 thick film were 275 and 3.5, respectively. And the PZT-6 film shows the remanent polarization of 22.1 $C/cm^2$ and coercive field of 13.7 kV/cm.

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국산동판을 사용한 리드프레임 도금기술에 관한 연구 (Electroplating on the Lead Frames Fabricated from Domestic Copper Plate)

  • 장현구;이대승
    • 한국표면공학회지
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    • 제19권3호
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    • pp.92-108
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    • 1986
  • An electroplating on the lead frame fabricated from domestic copper plate was studied experimentally. In this study, nickel was plated on the thin copper lead frame and silver layer was coated on the nickel film in the cyanide electrolyte. The effect of process variables such as current density, plating time, coating thickness and flow rate of electrolytic solution on the properties of coating was investigated. Some samples on each step were fabricated during electroplating. The results obtained from polarization measurement, observation of SEM photograph, adhesion test of coating and microhardness test are as follows. On silver plating, polarization resistance of potentiostatic cathodic polarization curve is reduced as the flow rate of Ag electrolytic solution increases. And above resistance is also reduced when the minor chemicals of sodium cyanide and sodium carbonate are added in potassium silver cyanide bath. The reduced polarization resistance makes silver deposition on the cathode easy. An increase in the current density and the coating thickness causes the particle size of deposit to coarsen, and consequently the Knoop microhardness of the coating decreases. On selective plating an increase in the flow rate of plating solution lead to do high speed plating with high current density. In this case, the surface morphology of deposit is of fine microstructure with high Knoop hardness. An increasing trend of the adhesion of coating was shown with increasing the current density and flow rate of electrolytic solution.

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감광성 폴리머 저항 페이스트를 이용한 Low Tolerance 후막 저항체 (Thick Film Resistors with Low Tolerance Using Photosensitive Polymer Resistor Paste)

  • 김동국;박성대;이규복;경진범
    • 공업화학
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    • 제21권4호
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    • pp.411-416
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    • 2010
  • 본 연구에서는 알칼리 현상형 감광성 수지재료와 전도성 카본블랙을 이용하여 만들어진 감광성 폴리머 저항 페이스트를 이용하여 후막저항체의 허용편차(tolerance)를 개선하고자 하였다. 먼저 카본블랙과 감광성 수지의 선택이 폴리머 후막저항(polymer thick film resistor, PTFR)의 저항값의 범위와 허용편차의 수준에 미치는 영향을 조사하였다. 이후 테스트 기판상에 감광성 저항 페이스트를 도포하는 방법에 따른 저항값 허용편차의 차이를 평가하였다. 감광성 저항 페이스트를 스크린 인쇄를 이용하여 테스트 기판의 전면에 도포한 경우에는 테스트 기판상에서 균일한 두께의 후막을 형성하기 어렵기 때문에 위치에 따른 저항값의 허용편차가 크게 나타났다. 반면, 롤러를 이용하여 페이스트를 도포하였을 때, 전체 기판 면적에 균일한 두께의 저항체 후막을 형성할 수 있었으며, 저항값 평가 결과 ${\pm}10%$ 이내의 낮은 허용편차를 나타내었다. 포토공정을 이용한 정밀한 패터닝 공정과 롤러를 이용한 균일한 두께의 저항막 도포 공정을 결합함으로써 후막저항의 허용편차를 개선할 수 있었다.

황산전해액에서 양극산화에 의한 알루미나 막 제조에 관한 연구 (Study on the Synthesis of Alumina Membrane by Anodization in Sulfuric Acid)

  • 김현;장윤호;함영민
    • 공업화학
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    • 제8권5호
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    • pp.756-762
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    • 1997
  • 본 실험에서는 황산용액에서 전기화학적으로 금속 알루미늄판을 양극산화하여 원통형 세공구조를 갖고 있는 alumina막을 형성시켰다. 양극화에 사용된 알루미늄 시료는 전해연마, 화학연마 및 열산화와 같은 전처리 공정을 거쳐서 준비하였으며, 형성된 알루미나막의 세공분포와 두께 등을 SEM과 BET를 사용하여 조사하였다. 그 결과 산화피막이 Keller모델과 같은 기하 구조로 이루어져 있으며. 균일한 세공 분포를 지니고 있음을 볼 수 있었다. 그리고 산화막의 세공크기와 두께는 황산전해질의 농도, 반응온도 그리고 전류밀도와 같은 양극산화 공정변수에 의존함을 알수 있었다.

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(N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 Langmuir-Blodgett막의 누적 및 전기적 특성 (Deposition and Electrical Properties of (N-docosyl quinoliniurm)-TCNQ(1:2) Charge Transfer Complex Langmuir-Blodgett Films)

  • 정순욱;정회걸
    • 한국응용과학기술학회지
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    • 제17권1호
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    • pp.29-35
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    • 2000
  • In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of ${\pi}-A$ isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about $4.59{\sim}5.58$. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.