• Journal of the Optical Society of Korea
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• v.7 no.2
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• pp.47-52
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• 2003

Effect of soaking temperature on erbium doping of the optical fiber core during solution doping procedure, especially in the modified chemical vapor deposition (MCVD) process, was investigated. The concentration of dopants such as $Er^{3+} and Al^{3+}$ in the preforms and the optical fibers measured by the electron probe microanalysis (EPMA) and the optical spectrum analyzer (OSA) was found to increase with decreasing the soaking temperature. The increase in the concentration of the $Er^{3+}$ is attributed to the precipitation of the erbium due to the decrease in the solubility as well as the increase of capillary force and viscosity of the doping solution by decreasing the temperature.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.80.1-80.1
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.209.1-209
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• 2000

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

• Elastomers and Composites
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• v.56 no.4
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• pp.250-253
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• 2021

Polypyrrole is an organic thermoelectric material which has been receiving extensive attention in recent years. Polypyrrole is applicable in various fields because its electrical properties are controllable by its doping concentration. In this study, the effects of the polypyrrole doping state on its photoresponse were investigated. The degree of doping was controlled by ammonia solution treatment. Then, the chemical structure as a function of the doping states was observed by Raman analysis. Moreover, the photocurrent and photovoltage characteristics for various doping states were measured by an asymmetrically irradiated light source. As the degree of doping increased, the electrical conductivity increased, which affected the photocurrent. Meanwhile, the photovoltage was related to the temperature gradient caused by light irradiation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.385-392
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• 2001

There have been many investigations and researches on PLC type of optical amplifiers because they are convenient for mass production and also can integrate multi-functional devices into a single chip. In this research. the fabrication of optical waveguide made of Si/$Sio_2$ by FHD(Flame Hydrolysis Deposition) for passive integrated optical devices and $1.5\mu\textrm{m}$ optical amplifier by Solution Doping method, which is one of the method doping $Er^{3+}$ into the thin film, are mainly discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.203-207
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• 2018

In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of $1.89{\times}107$ and the lowest trap density of $4.829{\times}1,022cm^{-2}$ were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.19-21
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• 2004

This paper presents a 3-dimensional diffusion simulation with adaptive solution strategy. The developed diffusion simulator VLSIDIF-3 was designed to re-refine areas. Refine scheme was calculated by the difference of doping concentration between any of two nodes. Each element is greater than tolerance and redo diffusion process until error is tolerable. Numerical experiment in low doping diffusion problem showed that this adaptive solution strategy is very efficient in both memory and time, and expected this scheme would be more powerful in complex diffusion model.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.55-58
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• 2004

This paper presents a 3-dimensional diffusion simulation with adaptive solution strategy. The developed diffusion simulator VLSIDIF-3 was designed to re-refine areas where difference of doping concentration between any of two nodes of each element is greater than tolerance and redo diffusion process until error is tolerable. Numerical experiment in low doping diffusion problem showed that this adaptive solution strategy is very efficient in both memory and time, and expected this scheme would be more powerful in complex diffusion model.