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http://dx.doi.org/10.4313/JKEM.2018.31.4.203

The Effects of Lithium-Incorporated on N-ZTO/P-SiC Heterojunction Diodes by Using a Solution Process  

Lee, Hyun-Soo (Department of Electronic Materials Engineering, Kwangwoon University)
Park, Sung-Joon (Department of Electronic Materials Engineering, Kwangwoon University)
An, Jae-In (Department of Electronic Materials Engineering, Kwangwoon University)
Cho, Seulki (Department of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.4, 2018 , pp. 203-207 More about this Journal
Abstract
In this work, we investigate the effects of lithium doping on the electric performance of solution-processed n-type zinc tin oxide (ZTO)/p-type silicon carbide (SiC) heterojunction diode structures. The proper amount of lithium doping not only affects the carrier concentration and interface quality but also influences the temperature sensitivity of the series resistance and activation energy. We confirmed that the device characteristics vary with lithium doping at concentrations of 0, 10, and 20 wt%. In particular, the highest rectification ratio of $1.89{\times}107$ and the lowest trap density of $4.829{\times}1,022cm^{-2}$ were observed at 20 wt% of lithium doping. Devices at this doping level showed the best characteristics. As the temperature was increased, the series resistance value decreased. Additionally, the activation energy was observed to change with respect to the component acting on the trap. We have demonstrated that lithium doping is an effective way to obtain a higher performance ZTO-based diode.
Keywords
Silicon carbide substrate (p-type); Li-Zinc-Tin oxide; Heterojunction diode; Solution process; Trap density;
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