• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.2026-2028
• /
• 2000

As the results of evaluation of its performance for 300 kN Ball and Socket type suspension insulators. There was electrically internal puncture of the solid insulating body of the insulating due to the steep front impulse voltage, which usually occurs puncture before external flash-over of insulators, moreover we have obtained satisfactory results in power arc test of 7.2kA cycle fatigue test with high qualify control index of 4.6, especially we have obtained more satisfactory results than that before improvement of its materials.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.215-216
• /
• 2006

Solid insulation exposed to voltage is degraded by electrical tree process. And the degradation of the insulation is accelerated by voltage application. For this experimental, specimen of e1ectrical tree model is made by XLPE (cross-linked polyethylene). And the size of the specimen is $7*5*7\;mm^3$. Distance of need1e and plane is 2 mm. Voltages applied for acceleration test are 12 kV to 15 kV. And distribution characteristic of degraded stage is studied too. As a PD detecting and data process, discharge data acquire from PD detecting system (Biddle instrument). The system presents statistical distribution as phase resolved. Moreover the processing time of electrical tree is recorded to know the speed of degradation according to voltage.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1327-1329
• /
• 2006

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 2, 10, 30[mN/m](gas state, liquid state, and solid state). The physicochemical properties of the LB films on the surface of pure water are studied by AFM. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V.

• Journal of the Korean Ceramic Society
• /
• v.51 no.4
• /
• pp.295-299
• /
• 2014

Electrical conductivities of complex perovskites, layered perovskite and Sr doped layered perovskite oxides were measured and analyzed for cathode materials of Intermediate Temperature-operating Solid Oxide Fuel Cells (IT-SOFCs). The electrical conductivities of $Sm_{1-x}Sr_xCoO_{3-\delta}$ (x = 0.3 and 0.7) exhibit a metal-insulator transition (MIT) behavior as a function of temperature. However, $Sm_{0.5}Sr_{0.5}CoO_{3-\delta}$ (SSC55) shows metallic conductivity characteristics and the maximum electrical conductivity value compared to the values of $Pr_{0.5}Sr_{0.5}CoO_{3-\delta}$ (PSC55) and $Nd_{0.5}Sr_{0.5}CoO_{3-\delta}$ (NSC55). The electrical conductivity of $SmBaCo_2O_{5+\delta}$ (SBCO) exhibits a MIT at about $250^{\circ}C$. The maximum conductivity is 570 S/cm at $200^{\circ}C$ and its value is higher than 170 S/cm over the whole temperature range tested. $SmBa_{0.5}Sr_{0.5}Co_2O_{5+\delta}$ (SBSCO), 0.5 mol% Sr and Ba substituted at the layered perovskite shows a typically metallic conductivity that is very similar to the behavior of the SSC55 cathode, and the maximum and minimum electrical conductivity in the SBSCO are 1280 S/cm at $50^{\circ}C$ and 280 S/cm at $900^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.280-280
• /
• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• New & Renewable Energy
• /
• v.18 no.2
• /
• pp.40-49
• /
• 2022

In this study, the phase and electrochemical properties of Co and Ti substituted layered perovskites SmBaCo_2-xTi_xO_5+d (x=0.5, 0.7, 1.0, 1.1, 1.3, and 1.5) were analyzed, and their application as electrodes in solid oxide fuel cells (SOFCs) were evaluated. After calcination at 1300℃ for 6 h, a single phase was observed for two compositions of the SmBaCo_2-xTi_xO_5+d oxide system, SmBaCoTiO_5+d (x=1.0) and SmBaCo_0.9Ti_1.1O_5+d (x=1.1). However, the phases of SmBaCoTiO_5+d (SBCTO) and SmTiO₃ coexisted for compositions with x≥1.3 (Ti content). In contrast, for compositions of x≤0.7, the SmBaCo₂O_5+d phase was observed instead of the SmTiO₃ phase. To evaluate the applicability of these materials as SOFC electrodes, the electrical conductivities were measured under various atmospheres (air, N₂, and H₂). SBCTO exhibited stable semi-conductor electrical conductivity behavior in an air and N₂ atmosphere. However, SBCTO showed insulator behavior at temperatures above 600℃ in a H₂ atmosphere. Therefore, SBCTO may only be used as cathode materials. Moreover, SBCTO had an area specific resistance (ASR) value of 0.140 Ω·cm² at 750℃.

• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.1808-1810
• /
• 2004

This paper describes the discharge characteristics of liquid $SF_6$ (-41$[^{\circ}]$, 1.7[atm]) and $LN_2$ for plane to plane, needle to plane, plane to needle and sphere to plane electrode with gap variations from 1[mm] to 12[mm]. From this result, the breakdown voltage was increased with increasing gap length. Especially, the formation of bubbles by evaporation was observed in spite of non-applying voltage source. A corona is created of the applying voltage from the bubbles on the electrodes applied voltage. We consider it equal mechanism of corona as void exists in solid insulator. The results of liquid $SF_6$ and $LN_2$ discharge characteristics were caused by bubble formed evaporation and applied electric field voltage. Corona was happened to weak bubble and was proceed to new bubble breakdown.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.219-223
• /
• 2001

In this paper, electromagnetic waves were measured in accordance with propagating the discharge when positive and negative DC high voltage was applied to needle-plane electrdes and plane-plane electrdes that solid dielectric was inserted between the electrodes. The radiated electromagnetic waves were investigated in bandwidth of VHF($30{\sim}230$[MHz]) using an biconical antenna. In needle-plane electrodes high electric field intensity is shown in both frequency band of 90(MHz) and 170[MHz], and gradually decreasing characteric is appeared at high frequency band. However high electric field intensity is shown in both 80[MHz] and 140[MHz] in case of plane-plane electrodes configuration. And over 150[MHz] frequency band, rapidly decreasing characteristic is shown. Moreover, electric field intensity of positive DC is about $5{\sim}10$[dB] higher than negative DC.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.355-358
• /
• 2004

In this work, N-LDMOSFET(Lateral Double diffused MOSFET) was designed and fabricated on SOI(Silicon-On-Insulator) substrate, for such applications as motor controllers and high voltage switches, fuel injection controller systems in automobile and SSR(Solid State Rexay)etc. The LDMOSFET was designed to overcome the floating body effects that appear in the conventional thick SOI MOS structure by adding p+ region in source region. Also, RESURF(Reduced SURface Field) structure was proposed in this work in order to reduce a large on-resistance of LDMOSFET when operated keeping high break down voltage. Breakdown voltage was 268v in off-state ($V_{GS}$=OV) at room temperature in $22{\mu}m$ drift length LDMOSFET. When 5V of $V_{GS}$ and 30V of $V_{DS}$ applied, the on resistance(Ron), the transcon ductance($G_m$) and the threshold voltage($V_T$) was 1.76k$\Omega$, 79.7uA/V and 1.85V respectively.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.65 no.11
• /
• pp.1937-1942
• /
• 2016

Unlike oil immersed transformers, cast-resin transformers have the solid insulator 'epoxy resin' in sealed structure. Therefore, they reveal a lot of limitations in checking aging conditions and predicting an accident. This study analyzed the characteristics of Cast-resin transformers by the measurement distance and measurement sensitivity with a corona defect sample, using antenna sensor. Therefore, the experiment has proven that the antenna sensor-based measurement method proposed in this study is able to detect the insulation defect location of the cast-resin transformer, unlike conventional measurement methods. It is expected that the result of this study will be used to develop a new type of measuring method in order to measure insulation defects and to use in safety inspection of domestic cast-resin transformers.