• Title/Summary/Keyword: Solar cell application

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Future Prospect of Perovskite Solar Cells for Practical Applications (페로브스카이트 태양전지 안정성 개선을 위한 광활성층 연구 현황과 전망)

  • Song, Jae-Kwan;Kim, Do-Heyoung
    • Korean Chemical Engineering Research
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    • v.58 no.1
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    • pp.1-20
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    • 2020
  • Development of efficient methods for clean energy production became a critical issue to improve the quality of human lives. Solar cells is considered as one of the alternative solutions to resolve the issue. Although Si-based solar cells are only popularly utilized for practical applications, high manufacturing cost is considered as a serious drawback for further versatile applications. Thus, different types of are being investigated aiming to replace the Si-based solar cells. Recently, perovskite solar cells (PSC) are considered as a potential replacement for Si-based solar cells due to their low production cost, high power conversion efficiency, light weight and possibility of flexible device fabrication. Thus, we have reviewed the challenges of PSC faced with practical application, particularly on stability.

Improvement of Cu2ZnSnS4 Solar Cell Characteristics with Zn(Ox,S1-x) Buffer Layer (Zn(Ox,S1-x) 버퍼층 적용을 통한 Cu2ZnSnS4 태양전지 특성 향상)

  • Yang, Kee-Jeong;Sim, Jun-Hyoung;Son, Dae-Ho;Lee, Sang-Ju;Kim, Young-Ill;Yoon, Do-Young
    • Korean Chemical Engineering Research
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    • v.55 no.1
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    • pp.93-98
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    • 2017
  • This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

  • Kang, Junyoung;Le, Anh Huy Tuan;Park, Hyeongsik;Kim, Yongjun;Yi, Junsin;Kim, Sunbo
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.6
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    • pp.351-354
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    • 2016
  • The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of $2.68{\times}10^{-4}{\Omega}{\cdot}cm$, high hall mobility of $46.89cm^2/V.s$, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

Influence of sputtering pressure on structural and electrical properties of molybdenum thin film for solar cell application (태양전지용 Mo 박막의 스퍼터 압력에 따른 구조적, 전기적 특성의 변화)

  • Kim, Joong-gyu;Lee, Su-ho;Lee, Jae-hyung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.786-788
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    • 2013
  • Molybdenum (Mo) thin film has high electrical conductivity and has been used for a back contact of CIGS thin film solar cell. Generally, the electrical conductivity and the adhesion between the substrate and the film is greatly affected by sputtering conditions such as sputtering power, working pressure, and substrate temperature. In this study, Mo films were deposited by DC magnetron sputtering technique. The influence of sputtering pressure on the electrical and structural properties of Mo films was investigated by using SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, Reflectance, Hall measurement.

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Quantum dot sensitized ZnO nanowire array for solar cell application

  • Seol, Min-Su;Kim, Hui-Jin;Kim, U-Seok;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.384-384
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    • 2011
  • 양자점 감응형 태양전지는 염료감응형 태양전지와 비슷한 구조를 가지지만, 유기물 염료를 대신하여 무기물 양자점을 사용함으로서 기존 유기물 염료가 가지는 한계점을 극복할 수 있다. 양자점을 광감응 염료로 사용하는 경우 양자제한효과(quantum confinement effect)에 의해 양자점의 사이즈조절만으로 밴드갭을 조절할 수 있어 광학적 특성 조절이 용이하며, 유기물 염료보다 광흡수 능력도 뛰어나다. 더불어, 하나의 광자를 흡수하여 두개 이상의 전자-정공쌍을 만들 수 있는(multiple exciton generation) 가능성이 있어 기존 태양전지가 가지는 이론적 한계효율(Shockley-Queisser limit)을 뛰어넘을 수 있다. 본 연구에서는 고효율의 양자점 감응형 태양전지 개발을 위해, ZnO 나노선 구조에 CdS, CdSe 양자점을 증착한 CdSe/CdS/ZnO 나노선 헤테로구조를 수열합성법으로 합성하였다. 증착한 CdSe/CdS 양자점이 태양광의 가시광 전 영역을 흡수하여 전자-정공을 생성하며, 세 물질 간의 밴드구조를 통해 양자점에서 생성된 전자가 ZnO 나노선으로 포집되고, 바닥전극으로 직접연결이 되어있는 1차원의 나노선 구조를 통해 전자를 효율적으로 운반할 수 있다.

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Effect of oxalic acid solution to optimize texturing of the front layer of thin film sloar cells

  • Park, Hyeong-Sik;Jang, Gyeong-Su;Jo, Jae-Hyeon;An, Si-Hyeon;Jang, Ju-Yeon;Song, Gyu-Wan;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.401-401
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    • 2011
  • In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

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Efficiency Characteristics of DSSC Using TiO2 Paste for Low Temperature Annealing with TTIP (TTIP가 첨가된 저온소성용 TiO2 Paste를 이용한 DSSC의 효율 특성)

  • Kwon, Sung Yeol;Sim, Chang Soo;Yang, Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.1
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    • pp.53-57
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    • 2019
  • Recently, the application field of solar panels is increasing. Accordingly, the demand for flexible devices is also steadily increasing. It is therefore necessary to develop $TiO_2$ paste for low-temperature annealing for flexible DSSC fabrication. In this study, the $TiO_2$ paste for low-temperature annealing with varying molar ratio of titanium isopropoxide (TTIP) was prepared, and DSSC was fabricated and its characteristics were compared. As a result, there was no deformation of the particles on the surface in the SEM data. However, the highest open circuit voltage, short circuit current, and fill factor were measured in the DSSC unit cell prepared by adding 0.5 mol of TTIP to the $TiO_2$ paste, and the highest efficiency was 4.148%.

Electrochemical Performance of High-Voltage LiMn0.8Fe0.2PO4 Cathode with Polyacrylonitrile (PAN)-Based Gel Polymer Electrolyte

  • Kwon, O. Hyeon;Kim, Jae-Kwang
    • Korean Chemical Engineering Research
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    • v.57 no.4
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    • pp.547-552
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    • 2019
  • Electrochemical properties of $LiMn_{0.8}Fe_{0.2}PO_4$ cathode were investigated with gel polymer electrolyte (GPE). To access fast and efficient transport of ions and electrons during the charge/discharge process, a pure and well-crystallized $LiMn_{0.8}Fe_{0.2}PO_4$ cathode material was directly synthesized via spray-pyrolysis method. For high operation voltage, polyacrylonitrile (PAN)-based gel polymer electrolyte was then prepared by electrospinning process. The gel polymer electrolyte showed high ionic conductivity of $2.9{\times}10^{-3}S\;cm^{-1}$ at $25^{\circ}C$ and good electrochemical stability. $Li/GEP/LiMn_{0.8}Fe_{0.2}PO_4$ cell delivered a discharge capacity of $159mAh\;g^{-1}$ at 0.1 C rate that was close to the theoretical value ($170mAh\;g^{-1}$). The cell allows stable cycle performance (99.3% capacity retention) with discharge capacity of $133.5mAh\;g^{-1}$ for over 300 cycles at 1 C rate and exhibits high rate-capability. PAN-based gel polymer is a suitable electrolyte for application in $LiMn_{0.8}Fe_{0.2}PO_4/Li$ batteries with perspective in high energy density and safety.

Industrial Applications of Si-based Ceramics

  • Eichler, Jens
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.561-565
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    • 2012
  • Due to their unique combination of properties, Si-based ceramics, such as silicon carbide (SiC), silicon nitride ($Si_3N_4$) and silicon oxide ($SiO_2$ as fused silica), have a range of industrial applications in fields such as the chemical industry, aluminum manufacturing, oil and gas production and solar cell production. For each materials group, examples of typical applications from various industry sectors are presented while taking into account the property fingerprint.