• 한국결정성장학회지
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• 제24권3호
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• pp.94-98
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• 2014

$LiCoO_2$는 박막 베터리의 양극재료로써 많은 관심을 받고 있다. 본 연구에서는 스핀 코터를 이용한 졸-겔 합성공정과 열처리 과정에 의해서 Au 지지체 위에 $LiCoO_2$ 박막을 합성하였다. 합성된 박막의 구조는 X-선회절분석, 라만분광 광도계를 이용하여 분석하였다. 박막의 입자 형태는 전자현미경에 의해 관찰하였다. X-선회절분석, 라만분광광도계의 결과로부터, $550^{\circ}C$와 $750^{\circ}C$에서 합성된 박막은 스피넬구조와 층상 암염 형 구조를 가지는 박막으로 보이며, $650^{\circ}C$에서 합성된 박막은 층상 암염 형 구조와 스피넬 구조가 혼재되어져 있는 것으로 생각된다. $750^{\circ}C$에서 합성된 박막은 다른 낮은 온도에서 합성된 박막보다 큰 결정질의 균일한 분포의 입자를 가지는 것으로 확인되었다.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.508-513
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• 2017

Ultraviolet (UV) photodetectors are used in various industries and fields of research, including optical communication, flame sensing, missile plume detection, astronomical studies, biological sensors, and environmental research. However, general UV detectors that employ Schottky junction diodes and p-n junctions have high fabrication cost and low quantum efficiency. In this study, we investigated the characteristics of materials used to manufacture UV photodetectors in a low-cost solution process that requires easy fabrication of flexible substrates. We fabricated p-type NiO and n-type ZnO substrates with wide band gap by the sol-gel method and compared the characteristics of substrates prepared under different spin-coating and heat-treatment conditions.

• Journal of Ceramic Processing Research
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• 제20권4호
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• pp.395-400
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• 2019

This study was conducted on the structural and electrical properties of (Ba0.7Sr0.3)TiO3 thin films prepared by the sol-gel and spin-coating methods in order to investigate their applicability to electrocaloric devices. All specimens showed a tetragonal crystal structure and lattice constants of a = 3.972 Å, c = 3.970 Å. The mean grain size of specimens sintered at 800 ℃ was about 30 nm, and the average thickness of 5 times coated specimens was 304~311 nm. In the specimen sintered at 750 ℃, The relative dielectric constant and loss of specimens measured at 20 ℃ were 230 and 0.130, respectively, while dependence of the dielectric constant on unit DC voltage was -8.163 %/V. The remanent polarization and coercive fields were 95.5 μC/㎠ and 161.3 kV/cm at 21 ℃, respectively. And, the highest electrocaloric property of 2.69 ℃ was observed when the electric field of 330 kV/cm was applied.

• 전기화학회지
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• 제3권1호
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• pp.15-18
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• 2000

태양전지의 전극 기판으로 사용되는 전도성 투명 산화주석 박막의 제조 방법에 대하여 연구하였다. 졸겔법을 이용하여 산화 주석 박막을 제조하는 경우에 저가의 공정으로 대면적의 박막을 얻을 수 있는 장점이 있다. 본 연구에서는 공정 조건의 확립과 전구체의 설정에 중점을 두었다. 전구체 용액을 isopropyl 알코올에 tin isopropoxide를 용해한 용액을 사용하였으며 수화 반응을 억제하기 위하여 triethanolamine(TEA)을 첨가하였다. Corning유리 위에 spinning과 dipping방법을 이용하여 코팅을 하였으며 이후 열처리하여 최종 산화주석 박막을 제조하였다. 이렇게 제조된 박막은 가시광선 영역에서 $90\%$ 이상의 투과도를 보였으며 $0.01\Omega{\cdot}cm$ 이하의 비저항을 나타냈다

• 한국전기전자재료학회논문지
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• 제34권4호
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• pp.256-261
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• 2021

Indium-doped Mg_0.05Zn_0.95O thin films were deposited on glass substrates by a sol-gel method. Three types of indium precursors such as indium chloride, indium acetate, and indium nitrate were used as doping sources. Physical properties of fabricated thin films were analyzed through XRD (x-ray diffraction), UV-vis spectrophotometer, Hall effect measurement, and EDS (energy dispersive x-ray spectroscopy). All In-doped thin films grown in this study exhibited a preferred orientation of (002) with over 80% transmittance. The results showed that the Mg_0.05Zn_0.95O thin film from indium chloride as the indium precursor has higher crystallinity and transmittance with lower resistivity when compared with those from other indium precursors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1418-1419
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• 2006

PZT(80/20) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precursor solution was spin-coated on the multilayered thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about 60-65 ${\mu}m$. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT-6 thick film were 275 and 3.5, respectively. And the PZT-6 film shows the remanent polarization of 22.1 $C/cm^2$ and coercive field of 13.7 kV/cm.

• Korean Chemical Engineering Research
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• 제53권6호
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• pp.776-782
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• 2015

$TiO_2$ 나노입자의 광촉매 반응을 억제하기 위해 평균 직경 3~5 nm의 $TiO_2-SnO_2$ 나노입자가 titanium tetraisopropoxide(TTIP)와 tin chloride의 가수분해 반응에 의해 합성되었다. 생성된 $TiO_2-SnO_2$ 나노입자를 졸-겔법에 의해 3-glycidoxypropyl trimethoxysilane(GPTMS)과 반응시킴에 의해 유-무기 혼성 코팅 용액이 제조되었다. 그 후 코팅 용액을 기재인 polycarbonate(PC) 시트 위에 스핀 코팅시키고, $120^{\circ}C$에서 열경화 시켜 고굴절률 하드코팅 도막이 제조되었다. $TiO_2-SnO_2$ 나노입자로부터의 코팅 도막은 $TiO_2$ 나노입자로부터 얻어진 코팅 도막의 2H에 비해 증가된 3H의 연필경도를 보였다. 또한 $TiO_2-SnO_2$ 나노입자로부터의 코팅 도막의 굴절률은 Sn/Ti 몰 비가 0에서 0.5로 증가함에 따라 633 nm 파장에서 1.543으로부터 1.623으로 향상되었다.

• Korean Chemical Engineering Research
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• 제51권6호
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• pp.774-779
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• 2013

용액공정이 가능한 5 nm 정도의 입경을 가지는 이산화티탄 단분산 나노졸을 솔-젤법을 통하여 합성하였다. 결정성 이산화티탄 나노졸의 저온 스핀코팅 공정을 통하여, 거친 표면을 가지는 FTO 투명전극 기판에 블록킹층을 형성하였다. 이산화티탄 나노졸을 블록킹층에 코팅을 함으로써 거친 FTO 표면을 점진적으로 완만하게 할 수 있었다. 1, 2.5, 5, 및 10 중량%의 결정성 이산화티탄 나노 졸을 FTO 투명전극 기판에 스핀코팅하여 29, 38, 62 및 226 nm 두께의 이산화티탄 블록킹층을 형성할 수 있었다. 5 및 10 중량%의 결정성 이산화티탄 나노 졸의 경우 제곱평균 48.7 nm의 표면조도를 가지는 FTO의 투명전극 표면을 효과적으로 평탄화할 수 있었으며 이로 인해 1차원 형태의 산화아연 나노막대를 효과적으로 기판에 수직으로 배향할 수 있었다.