Korean Chemical Engineering Research

The Korean Institute of Chemical Engineers (한국화학공학회)
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A Study on Formation of Vertically Aligned ZnO Nanorods Arrays on a Rough FTO Transparent Electrode by the Introduction of TiO2 Crystalline Nano-sol Blocking Interlayer

결정성 이산화티탄 나노졸 블록킹층 도입을 통한 거친 표면을 가지는 FTO 투명전극기판 위 수직 배향된 산화아연 나노막대 형성에 관한 연구

  • Heo, Jin Hyuck (Department of Chemical Engineering, Kyung Hee University) ;
  • You, Myung Sang (Department of Chemical Engineering, Kyung Hee University) ;
  • Im, Sang Hyuk (Department of Chemical Engineering, Kyung Hee University)
  • Received : 2013.10.03
  • Accepted : 2013.11.04
  • Published : 2013.12.01
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Abstract

We synthesized the solution processible monodispersed $TiO_2$ crystalline nano-sol with ~ 5 nm in size by sol-gel method. Through the spin-coating of crystalline $TiO_2$ nano-sol at low processing temperature, we could make even blocking interlayer on the rough FTO transparent electrode substrate. The rough FTO surface could be gradually smoothed by the spin-coating of nano-crystalline $TiO_2$ sol based blocking interlayer. The 1, 2.5, 5, and 10 wt% of nanocrystalline $TiO_2$ sol formed 29, 38, 62, and 226 nm-thick of blocking interlayer in present experimental condition, respectively. The 5 and 10 wt% of $TiO_2$ nano-sol could effectively fill up the valley part of bare FTO with 48.7 nm of rms (root mean square) roughness and consequently enabled the ZnO to be grown to vertically aligned one dimensional nanorods on the flattened blocking interlayer/FTO substrate.

용액공정이 가능한 5 nm 정도의 입경을 가지는 이산화티탄 단분산 나노졸을 솔-젤법을 통하여 합성하였다. 결정성 이산화티탄 나노졸의 저온 스핀코팅 공정을 통하여, 거친 표면을 가지는 FTO 투명전극 기판에 블록킹층을 형성하였다. 이산화티탄 나노졸을 블록킹층에 코팅을 함으로써 거친 FTO 표면을 점진적으로 완만하게 할 수 있었다. 1, 2.5, 5, 및 10 중량%의 결정성 이산화티탄 나노 졸을 FTO 투명전극 기판에 스핀코팅하여 29, 38, 62 및 226 nm 두께의 이산화티탄 블록킹층을 형성할 수 있었다. 5 및 10 중량%의 결정성 이산화티탄 나노 졸의 경우 제곱평균 48.7 nm의 표면조도를 가지는 FTO의 투명전극 표면을 효과적으로 평탄화할 수 있었으며 이로 인해 1차원 형태의 산화아연 나노막대를 효과적으로 기판에 수직으로 배향할 수 있었다.

Keywords

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