• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.254-254
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• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

• 한국재료학회지
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• 제2권3호
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• pp.163-171
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• 1992

$TiO_2$가 5-50wt%첨가된 $SnO_2/TiO_2$ 후막형 감습소자를 스크린 프린팅 법을 이용하여 제조 하였다. 소자의 표면결정구조를 XRD, SEM 그리고 FTIR로 조사하였으며, 전기적 특성에 의한 후막소자의 감습특성을 측정하였다. $SnO_2/TiO_2$ 후막은 $TiO_2$ 결정상 보다 주로$(SnO^2){\cdot}6T$ 결정상으로 나타났으며, $1300^{\circ}C$에서 소결된 후막소자의 평균입경은 $2.0{\mu}m$이었다. 또한 $1300^{\circ}C$에서 소결된 10wt% $TiO_2$가 첨가된 $SnO_2/TiO_2$ 후막소자는 상대습도 20-90%에서 높은 감습특성을 나타내었다.

• 대한전자공학회논문지
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• 제13권2호
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• pp.23-27
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• 1976

p형과 n형 Si wafer의 111면위에 5x10-5mmHg의 진공내에서 SnO2-x박막을 Flash증착법으로 성장시킨 다음 산소분위기 속에서 열처리하여 Si-SnO2 heterojunction을 만들고 물성측정으로 부터 Energy bnad profile을 구하였다. 이 heterojunction은 양호한 정류성 Junction이며 400nm부터 1200nm까지 분광감도를 갖고 시정수가 -10-18sec로 고속광소자로 적합하며 Si p-n homojunction solar cell에 비하여 특성이 우수하고 제작이 간단하기 때문에 태양전지로 사용해도 손색이 없다. Si-SnO2 heterojunction was prepared by oxidzing at oxygen atmosphere SnO2-x Which made by Flith evaporation of SnO2 powder on III surface of p and n type Si single crystals. The energy band Profile of Si·SnO2 heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10-8sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

• 한국세라믹학회지
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• 제13권2호
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• pp.24-30
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• 1976

To observe the influence of tetrahedral and octahedral preference of cations of Ni2+, Ti4+ upon the formation and the color development of the MgO-SnO2 spinel containing Ni2+ and Ti4+ ions, the gradual substitution of Ni2+ ions for Mg2+ ions and of Ti4+ ions for Sn4+ ions of the spinel in NiO-MgO-SnO2-TiO2 system was carried out. On samples prepared by calcining the oxide and basic carbonate mixtures at 130$0^{\circ}C$ for 1.5 hour, the X-ray analysis, measurement of reflectance and the test of their stability as a glaze pigment were also carried out. On samples prepared by calcining the oxide and basic carbonate mixtures at 130$0^{\circ}C$ for 1.5 hour, the X-ray analysis, measurement of reflectance and the test of their stabiality as a glaze pigment were also carried out. The results are summarized as follows. 1) As increasing the amounts of Ni2+ ions in the xNiO.(2-x)MgO.SnO2 system, spinel was not formed easily, and the mixed-spinel was formed in NiO.MgO.SnO2 of x=1 but the spinels was not formed completely in the range of x>1.5 2) The spinels was not more formed in NiO-MgO-TiO2 system than NiO-MgO-SnO2 system. Therefore, Ti4+ ions have strong octahedral preference than Sn4+ ions. The color changed the yellow region little. The mixed-spinel or non-spinel was formed easily NiO.TiO2, MgO.TiO2 of illmenite type as the gradual substitution of Ti4+ ions for Sn4+ ions. 3) The results of glaze test. The color changed from white through graish brown to brown as the gradual substitution of Ni2+ ions for Mg2+ ions in calcium-zinc glaze and calcium glaze, and from white through light yellowish beige to dull beige in tile glaze. Also, the color did not change generally as the gradual substitution of Ti4+ ions for Sn4+ ions in NiO-MgO-SnO2-TiO2 system.

• 센서학회지
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• 제21권6호
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• pp.446-450
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• 2012

The important factors in sensors are sensitivity, selectivity, and response time. Oxide semiconductors are high sensitivity, fast response and the advantage of miniaturization. Zn-doped $SnO_2$ materials have been synthesized in order to improve the selectivity of the sensor. ZnO/$SnO_2$ crystals were prepared by a simple hydrothermal process and ultrasound pretreated hydrothermal process. ZnO/$SnO_2$ urchins were fabricated in the precursor solution with [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 and rod structures were fabricated ratio of 1:1 and 1:3. Surface area ratio was increased by increasing the ratio of [$Sn^{4+}$]. The sensitivity of sensors were highest at the [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 in ethanol, acetaldehyde, toluene, and nitric oxide.

• 한국세라믹학회지
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• 제40권11호
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• pp.1073-1077
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• 2003

Sn $O_2$ 가스센서는 낮은 농도의 가연성 가스 및 유독 가스를 표면 저항의 변화로부터 탐지할 수 있으나, 가스 선택성이 부족하다는 단점을 가지고 있다. 이러한 단점을 보완하기 위해서는 가스반응기구의 규명과 같은 기초이론 연구와 함께 선택성이 우수한 센서재료의 개발 및 적절한 신호처리방법의 적용이 필요하다. 본 논문에서는 Sn $O_2$ 표면에서 일어나는 에탄올 (C$_2$ $H_{5}$OH)과 아세토니트릴($CH_3$CN)의 촉매산화반응을 가스크로마토그래피 분석을 통해 확인하였다. PdCl$_2$가 첨가된 Sn $O_2$ 센서는 에탄올과 아세토니트릴에 대하여 높은 감도를 보였고, 반면에 La$_2$ $O_3$가 첨가된 Sn $O_2$ 센서는 에탄올에 대해서는 높은 감도를, 그리고 아세토니트릴에 대해서는 낮은 감도를 보였다. 이들 두 센서재료 개발 및 패턴인식기법적용을 통하여 아세토니트릴에 대한 선택성을 크게 증가시킬 수 있었다. 아세토니트릴에 대한 최소 탐지농도는, 공기 중에서는 15 ppm이었고, 다른 방해가스와 함께 존재할 경우에는 20 ppm에서 100 ppm 정도로 나타났다.

• 한국결정성장학회지
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• 제31권4호
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• pp.190-195
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• 2021

상온에서 PET 기판 위에 Mn-SnO₂/Ag/Mn-SnO₂ 3중 다층막을 RF/DC 마그네트론 스파터링 방식으로 제조하였다. EMP 시뮬레이션 결과에 따라 Mn-SnO₂의 막 두께는 40 nm, Ag 막 두께는 13 nm로 고정하였다. 550 nm 파장대역에서 측정한 3중막의 투과율은 82.9에서 88.1 % 범위였으며 면저항은 5.9에서 6.9 Ω/☐로 변화하였다. 가장 높은 성능지수(ϕ_TC)는 48.1 × 10^-3 Ω^-1로 나타났다. 곡률반경 4, 5 mm 조건에서 inner 밴딩과 out 밴딩의 굽힘시험을 10,000회 실시한 결과 Mn-SnO₂/Ag/Mn-SnO₂ 3중막의 저항변화율은 약 1.5 %로 탁월한 기계적 유연성을 보였다.

• 청정기술
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• 제21권4호
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• pp.265-270
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• 2015

리튬이차전지에서 전지의 용량을 증가시키기 위하여 음극의 전기화학적 용량을 증가시키는 것이 중요하다. 음극활물질 중에서 SnO₂와 Li₄Ti₅O₁₂는 흑연을 대체하기 위한 물질로 많은 연구가 진행되고 있다. 본 연구에서는 SnO₂/Li₄Ti₅O₁₂ 혼합물을 고상법으로 합성하였으며, SnO₂를 Li₄Ti₅O₁₂에 혼합하여 전기화학적인 용량을 증가시키는 실험을 수행하였다. SnO₂가 혼합될 경우에 Li₄Ti₅O₁₂의 용량보다 큰 전기화학적 용량을 갖는 물질을 합성할 수 있었다. 하지만 SnO₂의 특성으로 인하여 사이클이 진행됨에 따라서 용량이 감소하는 현상이 관찰되었다.

• 한국분말재료학회지
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• 제23권1호
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• pp.49-53
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• 2016

The present study demonstrates the effect of freezing conditions on the pore structure of porous Cu-10 wt.% Sn prepared by freeze drying of $CuO-SnO_2$/camphene slurry. Mixtures of CuO and $SnO_2$ powders are prepared by ball milling for 10 h. Camphene slurries with 10 vol.% of $CuO-SnO_2$ are unidirectionally frozen in a mold maintained at a temperature of $-30^{\circ}C$ for 1 and 24 h, respectively. Pores are generated by the sublimation of camphene at room temperature. After hydrogen reduction and sintering at $650^{\circ}C$ for 2 h, the green body of the $CuO-SnO_2$ is completely converted into porous Cu-Sn alloy. Microstructural observation reveals that the sintered samples have large pores which are aligned parallel to the camphene growth direction. The size of the large pores increases from 150 to $300{\mu}m$ with an increase in the holding time. Also, the internal walls of the large pores contain relatively small pores whose size increases with the holding time. The change in pore structure is explained by the growth behavior of the camphene crystals and rearrangement of the solid particles during the freezing process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1304-1307
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• 1997

A hydrogen gas sensor utilizing Pt/$SnO_2$ system was fabricated by the pressed pellet method. The crystal structure, direction of the crystal, crystal size and microstructure between the catalyst and the support ($SnO_2$) were characterized with Electron Diffraction Analysis, Transmission Electron Microscopy, Scanning Electron Microscopy. After the reactor with a Pt/$SnO_2$ sample was run with a flow rate of 30sccm (a mixture of $0.5%H_2$ in $N_2$) for a while, the resistance of $SnO_2$ was saturated, but the $SnO_2$ kept absorbing $H_2$ gas. $H_2$ gas sensing properties of Pt/$SnO_2$ were investigated at several temperatures. As a result, it was observed that Pt/$SnO_2$ has high sensitivity at $300^{\circ}C$ and $400^{\circ}C$.