• 한국재료학회지
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• 제29권1호
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• pp.1-6
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• 2019

Recent industrialization has led to a high demand for the use of fossil fuels. Therefore, the need for producing hydrogen and its utilization is essential for a sustainable society. For an eco-friendly future technology, photoelectrochemical water splitting using solar energy has proven promising amongst many other candidates. With this technique, semiconductors can be used as photocatalysts to generate electrons by light absorption, resulting in the reduction of hydrogen ions. The photocatalysts must be chemically stable, economically inexpensive and be able to utilize a wide range of light. From this perspective, cuprous oxide($Cu_2O$) is a promising p-type semiconductor because of its appropriate band gap. However, a major hindrance to the use of $Cu_2O$ is its instability at the potential in which hydrogen ion is reduced. In this study, gold is used as a bottom electrode during electrodeposition to obtain a preferential growth along the (111) plane of $Cu_2O$ while imperfections of the $Cu_2O$ thin films are removed. This study investigates the photoelectrochemical properties of $Cu_2O$. However, severe photo-induced corrosion impedes the use of $Cu_2O$ as a photoelectrode. Two candidates, $TiO_2$ and $SnO_2$, are selected for the passivation layer on $Cu_2O$ by by considering the Pourbaix-diagram. $TiO_2$ and $SnO_2$ passivation layers are deposited by atomic layer deposition(ALD) and a sputtering process, respectively. The investigation of the photoelectrochemical properties confirmed that $SnO_2$ is a good passivation layer for $Cu_2O$.

• 한국재료학회지
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• 제4권6호
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• pp.715-722
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• 1994

"Smart window"에 코팅재료로 쓰이는 thermochromic $Vo_{2}$박막을 전자빔 증착 방법으로 유리 기판위에 증착시켜 $0^{\circ}C$-$90^{\circ}C$ 온도범위에서 가시광 및 근적외선의 투과율을 spectrophotometer로 측정하였다. $300^{\circ}C$의 기판온도와 $400^{\circ}C$ 어닐링 온도가 $VO_{2}$ 박막이 결정화되기 때문인 것으로 확인되었다. 또한, $VO_{2}$박막을 알곤중에서 어닐링하면 500nm이하의 파장에서는 그 투과율이 상당히 낮아지는 것으로 나타났다. W가 5a/0첨가된 $V_{0.95}W_{0.05}O_{2}$박막은 약 $0^{\circ}C$의 천이돈도를 나타내었고 Sn이 0.5a/o $V_{0.995}W_{0.005}O_{2}$박막의 경우에는 $300^{\circ}C$의 기판온도에서 증착한 후 $450^{\circ}C$/5시간 동안 알곤가스 중에서 어닐링하였을때 뚜렷한 thermochromism을 나타내었으며 이 박막의 천이온도는 실용가능한 온도인 약 $25^{\circ}C$로 발견되었으며 약간의 이력곡선이 나타났다.력곡선이 나타났다.

• 대한전자공학회논문지SD
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• 제40권1호
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• pp.11-19
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• 2003

폭발성 가스의 증류 및 그 양을 검지하기 위한 4 개의 개별 센서가 한 마이크로 열판 위에 집적된 센서어레이를 개발했다. 이 센서어레이는 각종 가스에 대해 다양한 감도 패턴을 가지며, SnO2를 모물질로 하는 4 개의 산화물 반도체 마이크로 가스센서로 구성하였다. 다공질에 큰 비표면적을 가진 모물질에 서로 다른 촉매를 첨가하여 감지물질을 제작함으로써 저농도에 대한 감도 및 재현성을 높였고, 센서어레이 전반에서 균일한 온도 분포가 되도록 설계하였다. 마이크로 열판은 N/O/N 박막을 가진 실리콘 기관을 이용하여, 열적 고립을 위해 Al 본딩 와이어로 공기중에 부유되어 있고, CMP 공정으로 두께를 제어하여 소모 전력을 조절하였다. 400℃에서 동작하는 센서어레이로부터 얻은 감도를 이용하여 주성분 분석 기법을 통해 폭발 하한값의 범위에서 부탄, 프로판, LPG, 그리고 일산화탄소 등과 같은 폭발성 빛 유독성 가스의 증류 및 양을 신뢰성 있게 식별할 수 있었다.

• Journal of Magnetics
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• 제13권3호
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• pp.88-91
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• 2008

This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped $In_2O_3$ thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped $In_2O_3$ film, which may have applications in transparent oxide semiconductor spin electronics devices.

• 한국진공학회지
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• 제10권4호
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• pp.411-415
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• 2001

대기압 저온 플라스마를 사용하여 산화아연 박막의 건식 식각 가능성을 연구했다. 플라스마로부터 $H_\alpha^*$과 $CH_^*$ 라디컬 발생을 확인하였고, 라디컬 발생 능력은 광학 발광 스펙트럼 및 플라스마 임피던스 분석에 의해 캐소드 전극에 의존하는 것을 알았다. 식각능력은 플라스마 I-V커브에 의한 임피던스와 발광강도에 의해 계산되었다.

• 한국재료학회지
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• 제21권9호
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• pp.491-496
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• 2011

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.18-22
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• 2002

ITO thin films with thickness of 3000 $\AA$ were fabricated by rf magnetron sputtering system with a 10 mol % SnO$_2$-90 mol % In$_2$O$_3$target at various substrate temperature and annealing temperature in air. And we investigated structural, electrical and optical characteristics of them. It's resistivity, carrier concentration and Hall mobility was 2$\times$10$\^$-4/ Ωcm, 7$\times$10$\^$20/∼ 9$\times$10$\^$20/ cm$\^$-3/ and 21∼23 cm$^2$/V$.$sec respectively. And it's optical transmittance and energy band gap was above 85 % in the visible range and 3.53 eV respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.50.1-50.1
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• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).