• Nuclear Engineering and Technology
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• v.52 no.2
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• pp.344-351
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• 2020

AgInCd alloy is widely used as neutron absorber in nuclear reactors. However, the AgInCd control rods may fail during service due to the irradiation swelling. In the present study, a calculational method is proposed to calculate the composition change of the AgInCd absorber. Calculated results show that neutron fluence has significant impact on the chemical compositions. Ag and In contents gradually decrease while Cd and Sn conversely increases from the center to the rim of AgInCd absorber due to the depression of neutron flux. The composition change at the surface is higher almost two times than that at the center. Based on the calculated compositions, six simulated AgInCdSn alloys were prepared and examined. With the increase of Cd and Sn, the simulated AgInCdSn alloys transform from a single fcc phase into the mixed fcc and hcp phases, and finally into the single hcp phase. The atomic volume of the hcp phase is obviously larger than the fcc phase. The fcc-hcp transformation results in considerable volume swelling of the AgInCd absorber. Moreover, the lattice parameters of the fcc and hcp phases gradually increase with Cd and Sn contents, which also can induce small volume swelling.

• Journal of Welding and Joining
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• v.30 no.6
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• pp.1-5
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• 2012

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.85-91
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• 2002

Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

• Journal of Welding and Joining
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• v.29 no.6
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• pp.65-70
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• 2011

The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.307-313
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• 2005

Electromigration behavior in the Sn96.5Ag3.0Cu0.5 solder lines was investigated and compared Sn96.5Ag3.0Cu0.5 with eutectic SnPb. Measurements were made for relevant parameters for electromigration of the solder, such as drift velocity, threshold current density, activation energy, as well as the product of diffusivity and effective charge number (DZ$\ast$). The threshold current density were measured to be $2.38{\times}10^4A/cm^2$ at $140^{\circ}C$ and the value represented the maximum current density which the SnAgCu solder can carry without electromigration damage at the stressing temperatures. The electromigration energy was measured to 0.56 eV in the temperature range of $110-160^{\circ}C$. The measured products of diffusivity and the effective charge number, DZ$\ast$ were $3.12{\times}10^{-10} cm^2/s$ at $110^{\circ}C$, $4.66{\times}10^{-10} cm^2/s$ at $125^{\circ}C$, $8.76{\times}10^{-10} cm^2/s$ at $140^{\circ}C$, $2.14{\times}10^{-9}cm^2/s$ at $160^{\circ}C$ SnPb solder existed incubation stage, while SnAgCu did not have incubation stage. It was thought that the diffusion mechanism of SnAgCu was different from that of SnPb.

• Journal of Korea Foundry Society
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• v.17 no.3
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• pp.245-251
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• 1997

Solderability, interfacial reaction and mechanical properties of joint between Sn-Bi-Ag base solder and Cu-substrate were studied. Solders were subjected to aging treatments to see the change of mechanical properties for up to 30 days at $100^{\circ}C$, and then also examined the changes of microstructure and morphology of interfacial compound. Sn-Bi-Ag base solder showed about double tensile strength comparing to Pb-Sn eutectic solder. Addition of 0.7wt%Al in the Sn-Bi-Ag alloy increase spread area on Cu substrate under R-flux and helps to reduce the growth of intermetallic compound during heat-treatment. According to the aging experiments of Cu/solder joint, interfacial intermetallic compound layer was exhibited a parabolic growth to aging time. The result of EDS, it is supposed that the soldered interfacial zone was composed of $Cu_6Sn_5$.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.61-68
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• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.302-306
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• 2021

SnO₂ 30/Ag 15/SnO₂ 30 nm(SAS) tri-layer films were deposited on the glass substrates with RF and DC magnetron sputtering and then electron beam is irradiated on the surface to investigate the effect of electron bombardment on the opto-electrical performance of the films. electron beam irradiated tri-layer films at 1000 eV show a higher figure of merit of 2.72×10^-3 Ω^-1 than the as deposited films due to a high visible light transmittance of 72.1% and a low sheet resistance of 14.0 Ω/☐, respectively. From the observed results, it is concluded that the post-deposition electron irradiated SnO₂ 30/Ag 15/SnO₂ 30 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.80-83
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• 2003

본 연구에서는 고온 솔더 범프와 저온 솔더 패드를 이용하여 $140^{\circ}C$에서 1분간의 리플로 공정을 통해 접합에 성공하였다. 고온 솔더 범프로 Sn-4.0Ag-0.5Cu 솔더 볼을 사용하였고, 저온 솔더는 In-48Sn $(mp:\;117^{\circ}C)$ 솔더를 기판에 evaporation 방법으로 두께 $20\;{\mu}m$의 패드 형태로 증착하였다. $140^{\circ}C$에서 1분간의 리플로 공정을 통해 칩과 기판을 접합하였으며, 접합 단면을 관찰해 본 결과 저온 솔더가 녹아 고온 솔더에 wetting된 것을 관찰하였다. 이 시편을 상온에서 시효처리를 실시한 결과 시간의 경과에 따라 저온 솔더와 고온 솔더가 상호 확산하여 약 $40\;{\mu}m$였던 확산층의 범위가 점차 증가하는 것을 관찰할 수 있었다. 또한, 리플로 공정변수에 따른 솔더의 미세구조 변화 및 ball shear strength등의 기계적 특성에 대해 고찰하였다.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.231-233
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• 1987

A study has been made on the electrical properties of sintered Ag-$SnO_2$ composite materials. Hardness increased with $SnO_2$ contents increasing while the electrical conductivity decreased. The weight loss after are erosion test was decreased with $SnO_2$ contents increasing to 10 (w/o) $SnO_2$.