• 센서학회지
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• 제14권5호
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• pp.297-301
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• 2005

Nanocrystalline SnO and $SnO_{2}$ powder have been prepared by hydrazine method. Sn-Hydrazine complex was formed by the reduction between aqueous $SnCl_{2}$ solution and hydrazine monohydrate. $SnO_{2}$ nano powder was prepared by the decomposition of Sn-Hydrazine complex at $450^{\circ}C$. When NaOH was added to Sn-hydrazine complex, SnO powder with nano-sheet morphology could be prepared. This can be attributed to the role of $OH^{-}$ ion as a reducing agent.

• 대한안전경영과학회지
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• 제16권4호
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• pp.397-403
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• 2014

The objective of this study is to provide improved methodology based on the IPA method. One case studies are solved by the proposed method. this study present the method that give value to use SN(Signal-to-Noise) ratio in IPA. A case study of lecture satisfaction are solved by the proposed method and the existing method. Also, the result is compared with the existing method using Mean and the proposed method using SN ratio.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.132.2-132.2
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• 2010

Mesoporous tinoxide ($SnO_2$) as anode materials for Li-ion battery were prepared by hydrothermal method and templating method using SBA-15 as template. And electrochemical properties of $SnO_2$ electrode were investigated with cyclic voltammogram (CV). The morphology and structures of $SnO_2$ were characterized by transmission electron microscopy (TEM) and X-ray diffractometer (XRD), respectively. The specific surface area was defined by $N_2$ adsorption with BET(Brunauer-Emmett-Teller) method. As a result, the surface area of mesoporous $SnO_2$ which was made from templating method is higher than the case of using hydrothermal method. In addition, in anodic performance, mesoporous $SnO_2$ which is prepared by templating method showed higher charge-discharge capasity compared to hydrothermal method and exhibited excellent stability over the entire cycle number. It was indicated that electrochemical performances of mesoporous $SnO_2$mainly affected to the structural features, such as specific surface area and porosity.

• 한국세라믹학회지
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• 제27권2호
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• pp.274-282
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• 1990

SnO2 powder was prepared by hydroxide method and oxalate method. In hydroxide method, the pH dependence of powder characteristics was investigated by using buffer solution. As increasing the pH of solution, SnO2 powder size was decreased because nucleation rate was inctreased by more supersaturation of solution. Also, we found that the powder by our method has larger specific surface area in comaprison with other method. And the degree of agglomeration of precipitate with the change of precipitation temperature was investigated in oxalate method. The SnC2O4 was angular shape precipitate, and the size of the SnC2O4 was increased with the increase of precipitation temperature in methanol solvent.

• 한국세라믹학회지
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• 제27권5호
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.91-93
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• 2002

Ti-Sn sol is fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. Viscosity of Ti-Sn sol decrease with increasing HCl additive. Gelation of Ti-Sn sol is delayed with increasing HCl and $Sn(OC_2H_5)_4$ additive.

• 공업화학
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• 제21권4호
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• pp.440-444
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• 2010

$SnCl_4$와 침전제로 ammonium nitrate ($NH_4NO_3$)의 수용액들을 사용하여 $90^{\circ}C$에서 침전반응으로 얻은 주석산(stannic acid)을 열처리하여 $SnO_2$ 분말을 제조하였으며, 요소($(NH_2)_2CO$)를 침전제로 사용한 균일침전법으로 주석산을 제조하여 열처리 전후로 재료의 특성을 상호 비교하였다. Ammonium nitrate의 침전법에 의한 주석산은 열처리에 따른 중량감소가 $700^{\circ}C$까지 이루어졌으며, 전체 중량감소는 16.5%였다. 또한 $600^{\circ}C$의 열처리로 비정질 주석산이 완전한 결정질의 $SnO_2$로 상변화가 이루어졌다. 주석산 제조 과정에서 $SnCl_4$ 수용액의 농도 증가 및 열처리 온도 증가에 따라 $SnO_2$의 결정입계가 증가하였다. 요소를 침전제로 사용한 균일침전법은 ammonium nitrate를 침전제로 하는 균일법보다 같은 조건의 열처리 공정 후에 상대적으로 미세한 결정입계의 $SnO_2$를 얻을 수 있었다.

• 한국세라믹학회지
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• 제33권8호
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• pp.895-900
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• 1996

수산염볍으로 Ba(Ti1-xSnx)4O9 분말을 합성하였다. Ti자리에 Sn이 치환되면 생성된 BaTi4O9은 고용체를 형성하기 때문에 안정화되었다. BaTi4O9 결정상의 생성을 위한 최적 고용량은 0.16mole이었으며, 그 이상 첨가시는 BaTi4O9 결정 성장을 억제하였다. 0.16mole Sn을 첨가하여 135$0^{\circ}C$에서 30분 소결하였을 때 긴 막대형의 결정이 가장 잘 발달하였고, 이때 Q값이 가장 높았다. 그러나 Sn 첨가량이나 소결 유지시간을 변화시켜도 유전율은 거의 일정하였다.

• 한국재료학회지
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• 제15권3호
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.41-45
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• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.