• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.297-301
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• 2005

Nanocrystalline SnO and $SnO_{2}$ powder have been prepared by hydrazine method. Sn-Hydrazine complex was formed by the reduction between aqueous $SnCl_{2}$ solution and hydrazine monohydrate. $SnO_{2}$ nano powder was prepared by the decomposition of Sn-Hydrazine complex at $450^{\circ}C$. When NaOH was added to Sn-hydrazine complex, SnO powder with nano-sheet morphology could be prepared. This can be attributed to the role of $OH^{-}$ ion as a reducing agent.

• Journal of the Korea Safety Management & Science
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• v.16 no.4
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• pp.397-403
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• 2014

The objective of this study is to provide improved methodology based on the IPA method. One case studies are solved by the proposed method. this study present the method that give value to use SN(Signal-to-Noise) ratio in IPA. A case study of lecture satisfaction are solved by the proposed method and the existing method. Also, the result is compared with the existing method using Mean and the proposed method using SN ratio.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.132.2-132.2
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• 2010

Mesoporous tinoxide ($SnO_2$) as anode materials for Li-ion battery were prepared by hydrothermal method and templating method using SBA-15 as template. And electrochemical properties of $SnO_2$ electrode were investigated with cyclic voltammogram (CV). The morphology and structures of $SnO_2$ were characterized by transmission electron microscopy (TEM) and X-ray diffractometer (XRD), respectively. The specific surface area was defined by $N_2$ adsorption with BET(Brunauer-Emmett-Teller) method. As a result, the surface area of mesoporous $SnO_2$ which was made from templating method is higher than the case of using hydrothermal method. In addition, in anodic performance, mesoporous $SnO_2$ which is prepared by templating method showed higher charge-discharge capasity compared to hydrothermal method and exhibited excellent stability over the entire cycle number. It was indicated that electrochemical performances of mesoporous $SnO_2$mainly affected to the structural features, such as specific surface area and porosity.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.274-282
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• 1990

SnO2 powder was prepared by hydroxide method and oxalate method. In hydroxide method, the pH dependence of powder characteristics was investigated by using buffer solution. As increasing the pH of solution, SnO2 powder size was decreased because nucleation rate was inctreased by more supersaturation of solution. Also, we found that the powder by our method has larger specific surface area in comaprison with other method. And the degree of agglomeration of precipitate with the change of precipitation temperature was investigated in oxalate method. The SnC2O4 was angular shape precipitate, and the size of the SnC2O4 was increased with the increase of precipitation temperature in methanol solvent.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.91-93
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• 2002

Ti-Sn sol is fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. Viscosity of Ti-Sn sol decrease with increasing HCl additive. Gelation of Ti-Sn sol is delayed with increasing HCl and $Sn(OC_2H_5)_4$ additive.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.440-444
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• 2010

$SnO_2$ powders were prepared from the calcination of stannic acids precipitated from the aqueous solution of $SnCl_4$ with ammonium nitrate as a precipitator at $90^{\circ}C$. For the comparison of properties, the stannic acids were prepared from the homogeneous precipitation method using urea as a precipitator at the same temperature. The stannic acid from ammonium nitrate at a thermal gravity analysis showed the weight loss until $700^{\circ}C$ and the percentage of total weight loss was 16.5%. The crystallization of stannic acid into $SnO_2$ finished in the calcination at $600^{\circ}C$ for 2 h. The crystallite size of $SnO_2$ increased with the increase of calcination temperature and initial concentration of $SnCl_4$ solution. In case of the same calcination condition, $SnO_2$ prepared from homogeneous precipitation using urea had a relatively smaller crystallite size rather than $SnO_2$ prepared from ammonium nitrate.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.895-900
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• 1996

Ba(Ti1-xSnx)4O9 powder was synthesized by oxalate method. With the substitution of Sn into Ti site the sintered BaTiO4 crystal phase was stabilized due to the formation of solid solution. The optimal amounts of Sn solutbility for formation of BaTi4O9 crystalline phase was 0.16mole and of Sn was substituted and sintering was done at 135$0^{\circ}C$ for 30 minutes long rod type crystal was well developed and the highest Q value was obtained. But dielectric constant wasnearly constant without regarding to the Sn addition and the sintering time.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.195-201
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• 2005

The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.41-45
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• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.