• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.9
• /
• pp.1308-1316
• /
• 1989

A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.9
• /
• pp.1359-1368
• /
• 1989

In this paper, the composite BiCMOS transistor which combines a bipolar transistor and a MOS transistor in a cascade type, is analyzed in terms of I-V characteristics and small signal equivalent circuit. As a result, it has a larger driving capability than MOS transistor and a more extended rante of input voltage than bipolar transistor. Next, a BiCMOS differential amplifier as its application example is designed and compared with the CMOS one and the bipolar one. It increases the driving capability of the CMOS differential amp and improves the linear operation region of the bipolar differential amp.

• Journal of Power Electronics
• /
• v.19 no.5
• /
• pp.1326-1335
• /
• 2019

Common mode (CM) chokes are a crucial part in EMI filters for mitigating the electromagnetic interference (EMI) of switched-mode power supplies (SMPS) and for meeting electromagnetic compatibility standards. However, the parasitic capacitances of a CM choke deteriorate its high frequency filtering performance, which results in increases in the design cycle and cost of EMI filters. Therefore, this paper introduces a negative capacitance generated by a negative impedance converter (NIC) to cancel the influence of equivalent parallel capacitance (EPC). In this paper, based on a CM choke equivalent circuit, the EPCs of CM choke windings are accurately calculated by measuring their impedance. The negative capacitance is designed quantitatively and the EPC cancellation mechanisms are analyzed. The impedance of the CM choke in parallel with negative capacitances is tested and compared with the original CM choke using an impedance analyzer. Moreover, a CL type CM filter is added to a fabricated NIC prototype, and the insertion loss of the prototype is measured to verify the cancellation effect. The prototype is applied to a power converter to test the CM conducted noise. Both small signal and EMI measurement results show that the proposed technique can effectively cancel the EPCs and improve the CM filter's high frequency filtering performance.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.10 s.352
• /
• pp.10-21
• /
• 2006

We have studied the characteristics of oxide VCSELS when their off-current and on-current are kept small in order to find out the possibility of low current operation. A large signal equivalent circuit model has been used. By comparing measured data and simulation results, the parameters of the large signal models are obtained including the capacitances. Using the large signal model, we have investigated the effects of capacitance and on/off currents upon the turn-on/turn-off characteristics and eye diagram. According to the experiment and simulation, the depletion capacitance, which has been neglected, is found to have significant influence on the him-on delay and eye-diagram. Therefore, for high speed and low current operation, the reduction of the depletion capacitance is essential.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.2
• /
• pp.330-336
• /
• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Journal of Power Electronics
• /
• v.18 no.3
• /
• pp.853-862
• /
• 2018

Frequency coupling in the phase domain is a recently reported phenomenon for phase locked loop (PLL) based three-phase grid-inverter systems. This paper investigates the mechanism and stabilization method for the frequency coupling to the stability of grid-inverter systems. Self and accompanying admittance models are employed to represent the frequency coupling characteristics of the inverter, and a small signal equivalent circuit of a grid-inverter system is set up to reveal the mechanism of the frequency coupling to the system stability. The analysis reveals that the equivalent inverter admittance is changed due to the frequency coupling of the inverter, and the system stability is affected. In the end, retuning the bandwidth of the phase locked loop is presented to stabilize the three-phase grid-inverter system. Experimental results are given to verify the analysis and the stabilization scheme.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
• /
• v.2 no.2
• /
• pp.30-37
• /
• 1991

The modified method which determines the extrinsic parameters at the small signal equivalent model for GaAs MESFET is presented. It is important that extrinsic parameters are completely eliminated, in order to calculate exact intrinsic parameters. Extrinsic circuit is established by transmission lines, parasitic inductors and capacitors. After these are extracted by S-parameters, intrinsic parameters are calculated. Especially, frequency dependence of parastic inductance and capacitance is considerally constant.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2005.05a
• /
• pp.467-472
• /
• 2005

In this paper, design and control of the novel SEPIC-Flyback converter(SF converter) is developed as a possible converter for fuel cell system. This output characteristic of SF converter is similar to Buck-Boost converter in that it can step-up or step-down the voltage. With the small signal equivalent circuit modeling of SF converter, control-to-output transfer function is obtained. SF converter couples up the inductive type converter to capacitive type converter with one transformer, which has less ripple current than its respective one does. To verify the validity of the proposed converter, 500W, 100kHz converter is designed and tested. ZVS switching and active clamping are also tested in practice.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.1
• /
• pp.129-137
• /
• 1995

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.3
• /
• pp.103-107
• /
• 2006

In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.