• Journal of the Korean Geotechnical Society
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• v.18 no.4
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• pp.249-256
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• 2002

The stability of slurry trench system is closely associated with the characteristics of the filter cake (assumed impervious membrane) transferring the hydrostatic force of slurry to the trench walls. The effectiveness of this assumption in a wide range of trench systems has been examined with the aid of a Finite Element program. Build up of excess porewater pressure in the soil mass behind the filter cake is a function of the slurry density, the properties of filter cake, the ground conditions, time, the geometry of trench and the original ground water level. These factors were all investigated by the Finite Element Method. The most significant factors were found to be the ground conditions and the properties of filter cake.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.05a
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• pp.272-278
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• 2002

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. In this paper, the effect of pattern density, trench width and selectivity of slurry on dishing in STI CMP process was investigated by using specially designed isolation pattern. As trench width increased, the dishing tends to increase. At $20{\mu}m$ pattern size, the dishing was decreased with increasing pattern density Low selectivity slurry shows less dishing at over $160{\mu}m$ trench width, whereas high selectivity slurry shows less dishing at below $160{\mu}m$ trench width.

• Journal of the Korean Geotechnical Society
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• v.18 no.4
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• pp.239-248
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• 2002

Bentonite slurries in a slurry wall construction must fulfill a stabilizing function by forming impermeable membrane (surface cake and penetrated cake) on the excavated soil faces. Thus problems are occurring in practice for the construction of diaphram walls and cut-off walls with a low permeability for wastes disposal areas in some deep excavations or different grounds. In this paper, the fundamental mechanics of fluid loss and filter cake formation in various soil beds are investigated using large scale laboratory apparatus. The sealing efficiency of filter cake from the large scale tests and the significance of fluid loss in a slurry trench are utilized for practical situation as a recommended design procedure.

• Proceedings of the Korean Geotechical Society Conference
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• 2005.03a
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• pp.1455-1460
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• 2005

This paper presents the results of an experimental study on the ground deformation by trench excavation for Diaphragm Wall construction. The model tests are performed to investigate the back ground deformation by lowering of slurry level in trench after excavating. Through these, the deformation characteristic of the back ground due to stress release of excavated space was investigated. This study considered relative density of soil mass and the distance between trench and surcharge. An experiment was performed in order to observe the failure pattern of a slurry-supported trench excavated in sandy ground. From model tests, in order to predict reasonably the deformation behavior of the adjacent ground due to the underground excavation, it is significantly recommended that the ground settlement by trench excavation should be considered.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.5-9
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• 2002

Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• Journal of the Korean Geotechnical Society
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• v.22 no.12
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• pp.77-88
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• 2006

A series of model tests were performed to investigate the ground deformation during trench excavation for diaphragm walls. An apparatus was manufactured to observe the failure pattern of a slurry-supported trench in sandy ground. Ground deformations including settlement and lateral displacement of the surrounding ground adjacent to the trench were carefully monitored during excavation. Experimental observations indicated that the settlement of the adjacent ground increased with closing to the trench. Especially, the considerable settlement occurred at the distance which was equal to 40% of the excavation depth. And, the higher settlement was obtained when the relative density of ground was looser and the ground water table was higher. Also, the lateral wall face of excavated trench was bulged with lowering the slurry level In stages and then the upper part of trench failed finally. The envelope of ground surface settlement could be represented as a hyperbolic line and the measured settlement was smaller than those predicted by Clough and O'Rourke (1990).

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.443-444
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• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.441-446
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• 2003

The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.308-311
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• 2006

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.