Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing

  • Cho, Kyu-Chul (Department of Material Science & Engineering, Hanyang University) ;
  • Jeon, Hyeong-Tag (Department of Material Science & Engineering, Hanyang University) ;
  • Park, Jea-Gun (Nano-SOI Process Laboratory, Hanyang University)
  • Published : 2006.05.27
Download PDF
⟨ Previous Next ⟩

Abstract

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

Keywords

References

  1. J.-G. Park, T. Katoh, H.-C. Yoo and J.-H. Park, Jpn. J. Appl. Phys., 40, L857 (2001) https://doi.org/10.1143/JJAP.40.L857
  2. J.-G. Park, T. Katoh, H.-C. Yoo, D.-H. Lee and U.-G. Paik, Jpn. J. Appl. Phys., 41, L 17 (2002) https://doi.org/10.1143/JJAP.41.L17
  3. H. Nojo, M. Kodera and R. Nakata, Proc. IEEE idem, San Francisco, CA, 1996 (The Institute of Electrical and Electronics Engineers, Piscataway, 1996) p. 349
  4. K. Hirai, H. Ohtsuki, T. Ashizawa and Y. Kurata, Hitachi Chemical Tech. Report No. 35, 17 (2000)
  5. Y. Tateyama, T. Hirano, T. Ono, N. Miyashita and T. Yoda, Proc. Int. Symp. Chemical Mechanical Planarization IV, Phoenix, 2000 (The Electrochemical Society, Pennington, 2000) p. 297
  6. Y. Homma, T. Furusawa, K. Kusukawa and M. Nagasawa, Proc. CMP-MIC, Santa Clara, CA, 1996 (Institute for Microelectronics Inter-Connection, Tampa, 1996) p. 67
  7. M. Miyajima, Syosetsu Handoutai CMP Gijyutsu (Details of Semiconductor CMP Technology) ed. T. Doi, (Kogyochosakai, 2000, Tokyo) p. 249 [in Japanese]
  8. F. W. Preston, J. Soc. Glass Tech., 11, 247 (1927)
  9. T. Katoh, S. J. Kim, U. Paik and J. G. Park, Jpn. J. Appl. Phys., 42, 5430 (2003) https://doi.org/10.1143/JJAP.42.5430
  10. H. G. Kang, T. Katoh, U. Paik and J. G. Park, Jpn. J. Appl. Phys., 43, L1 (2004) https://doi.org/10.1143/JJAP.43.L1
  11. T. Katoh, M. S. Kim, Ungyu Paik, J. G. Park, Jpn. J. Appl. Phys., 43, L217 (2002) https://doi.org/10.1143/JJAP.43.L217
  12. B. Lee, Ph.D Thesis, Dept. of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Massachusetts, 2002
  13. D. Boning and B. Lee, Materials Research Society Bulletin, 27, 761 (2002) https://doi.org/10.1557/mrs2002.246
  14. O. G. Chekina and L. M. Keer, J. Electrochem. Soc., 145, 2100 (1998) https://doi.org/10.1149/1.1838603