• 한국세라믹학회지
• /
• 제47권6호
• /
• pp.566-571
• /
• 2010

Dispersion behavior of the slurries consisted of bimodal-type AlN powders was examined in non-aqueous solvent system. Azotropic solvent system and copolymer acidic dispersant were applied to the slurries. Measurements of the sedimentation height and the viscosity of the each slurry, and the test of particle size distribution of the each powder sample were conducted as examinations for the dispersion behavior at the various dispersant contents. The bimodal-type particle size distribution was continued after addition of the dispersant and small particle portions were increased as the dispersant content increases. The density of the green sheet was also increased as the dispersant content increases and a green density of $2.114\;g/cm^3$ was obtained at the sample prepared from 2.4 wt% dispersant content. The increase of large particle portions resulted in the surface defects of the green sheets.

• 한국재료학회지
• /
• 제15권6호
• /
• pp.426-430
• /
• 2005

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.362-363
• /
• 2005

The objectives of this paper are to achieve good planarization of the deposited film and to improve deposition efficiency of multi-layer structures by using surface-micromaching process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages and disadvantages of CMP for MEMS structures are observed respectively by using the test patterns with structures larger than 1 um line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of slurries: ILD1300 and Nalco2371. And then, the experiments were conducted based on the pretest.

• 한국재료학회지
• /
• 제28권2호
• /
• pp.82-88
• /
• 2018

Stable slurries of YSZ in aqueous suspension with added polymer dispersants, namely, poly-methacrylic acid ammonium salt (PMMA), poly-acrylic acid (PAA) and poly-acrylic-co-maleic acid (PAMA), were mixed with the monomolecular dispersants citric acid and oxalic acid. The dispersion properties of the suspension were investigated using PSA, viscosity, sedimentation, and FT-IR. The polymer dispersants and monomolecular dispersants were attached to the YSZ surface by the carboxylic group, as shown by the FTIR results. A stabilized aqueous suspension was obtained when the polymer dispersant and citric acid were mixed and compared to the use of citric acid alone as a dispersant agent. When the polymer dispersant and citric acid were mixed and milled through attrition milling, there was a smaller particle size compared to when the polymer dispersant alone was used as a dispersant agent. This study determined that the particle size of the mixed dispersant was affected by the properties of the monomolecular dispersant and that the stability of the suspension was affected by the polymer dispersant. However, when slurries of YSZ were mixed with oxalic acid, the particle bridging behavior was the result of the high degree of viscosity and the small sedimentation height.

• 한국분말재료학회지
• /
• 제27권3호
• /
• pp.198-202
• /
• 2020

The effect of sublimable vehicles on the pore structure of Cu fabricated by freeze drying is investigated. The 5 vol% CuO-dispersed slurries with camphene and various camphor-naphthalene compositions are frozen in a Teflon mold at -25℃, followed by sublimation at room temperature. After hydrogen reduction at 300℃ and sintering at 600 ℃, the green bodies of CuO are completely converted to Cu with various pore structures. The sintered samples prepared using CuO/camphene slurries show large pores that are aligned parallel to the sublimable vehicle growth direction. In addition, a dense microstructure is observed in the bottom section of the specimen where the solidification heat was released, owing to the difference in the solidification behavior of the camphene crystals. The porous Cu shows different pore structures, such as dendritic, rod-like, and plate shaped, depending on the composition of the camphornaphthalene system. The change in pore structure is explained by the crystal growth behavior of primary camphor and eutectic and primary naphthalene.

• 한국전기전자재료학회논문지
• /
• 제17권2호
• /
• pp.138-143
• /
• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• 한국결정성장학회지
• /
• 제10권4호
• /
• pp.309-317
• /
• 2000

Langasite is a promising new piezoelectric material for SAW filter application. Little was known until recently about the methods needed to mechanically polish and chemically polish/etch this material. In this experiment, polishing, slurry chemistry and chemical wet etching for langasite is described. Conventional quartz and LN ($LiNbO_3$) polishing methods did not produce satisfactory polished surfaces, and polishing with a colloidal silica slurries has shown to be most effective. The optimum condition was investigated by changing the slurry chemistry. As the planarization effect is very important in SAW filter applications, the examination of the effective particle number effect and the particle size effect was carried out. Z-cut langasite surface which had been polished with the colloidal silica slurries was etched in a variety of etchants. Conventional quartz etchants destroyed the polished surface. Other etchants formed a thin film on the surfaces. In this experiment, the reaction between langasite and a few etching solution was analysed. And an appropriate selective etchant solution for analyzing the defects was synthesized.

• 한국재료학회지
• /
• 제19권4호
• /
• pp.207-211
• /
• 2009

In this study, we attempted to develop a convenient aluminizing process, using Al-Ti mixed slurry as an aluminum source, to control the Al content of the aluminized layer as a result of a one-step process and can be widely adopted for coating complex-shaped components. The aluminizing process was carried out by the heat treatment on disc and rod shaped S45C steel substrates with Al-Ti mixed slurries that were composed of various mixed ratios (wt%) of Al and Ti powders. The surface of the resultant aluminized layer was relatively smooth with no obvious cracks. The aluminized layers mainly contain an Fe-Al compound as the bulk phase. However, the Al concentration and the thickness of the aluminized layer gradually decrease as the Ti proportion among Al-Ti mixed slurries increases. It has also been shown that the Al-Ti compound layer, which formed on the substrate during heat treatment, easily separates from the substrate. In addition, the incorporation of Ti into the substrate surface during heat treatment was not observed.

• Transactions on Electrical and Electronic Materials
• /
• 제7권4호
• /
• pp.157-162
• /
• 2006

Chemical-mechanical polishing (CMP), one of the dominant technology for ULSI planarization, is used to flatten the micro electro-mechanical systems (MEMS) structures. The objective of this paper is to achieve good planarization of the deposited film and to improve deposition efficiency of subsequent layer structures by using surface-micromachining process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages of CMP process for MEMS structures are observed respectively by using the test patterns with structures larger than 1 urn line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of silica slurries: $ILD1300^{TM}\;and\;Nalco2371^{TM}$. And then, the experiments were conducted based on the pretest. A selectivity and pH adjustment of slurry affected largely step heights of MEMS structures. These results would be anticipated as an important bridge stone to manufacture MEMS CMP slurry.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
• /
• pp.1450-1451
• /
• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) ferroelectric fan was fabricated by the sol-gel method. Removal rate and non-uniformity (WIWNU%) were examined by change of silica slurries pH(10.3, 11.3, 12.3). Surface roughness of BLT thin films before and after CMP process was inquired into by atomic force microscopy (AFM). Effects of silica slurries pH(10.3, 11.3, 12.3) were investigated on the CMP performance of BLT film by the surface analysis of X-ray photoelectron spectroscopy(XPS).