A Study on CMP Mechanism of $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) Thin Films

$Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) 박막의 CMP 메커니즘 연구

  • Shin, Sang-Hun (Dept. of Electrical Eng., Chosun University) ;
  • Ko, Pil-Ju (Dept. of Electrical Eng., Chosun University) ;
  • Kim, Nam-Hoon (Research Institute of Energy Resources Technology, Chosun University) ;
  • Lee, Woo-Sun (Dept. of Electrical Eng., Chosun University)
  • 신상헌 (조선대학교 전기공학과) ;
  • 고필주 (조선대학교 전기공학과) ;
  • 김남훈 (조선대학교 에너지자원신기술연구소) ;
  • 이우선 (조선대학교 전기공학과)
  • Published : 2006.07.12

Abstract

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) ferroelectric fan was fabricated by the sol-gel method. Removal rate and non-uniformity (WIWNU%) were examined by change of silica slurries pH(10.3, 11.3, 12.3). Surface roughness of BLT thin films before and after CMP process was inquired into by atomic force microscopy (AFM). Effects of silica slurries pH(10.3, 11.3, 12.3) were investigated on the CMP performance of BLT film by the surface analysis of X-ray photoelectron spectroscopy(XPS).

Keywords