• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.33-39
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• 1985

A composition containing a-$Si_3N_4$ with 5w/0 $Y_2O_3$ and 4w/0 $Al_2O_3$ was hot-pressed at 1, $650^{\circ}C$ and 350kg/$cm^2$ for 1.5hrs and specimens of the same composition were pressureless-sintered at 1, 75$0^{\circ}C$ for 1.5 and 5hrs. By X-ray diffraction it was found that hot-pressed specimens were consisted of $\alpha$-and $\beta$-$Si_3N_4$ and sintered specimens were consisted of $\beta$-$Si_3N_4$ and $Si_3N-4Y_2O_3$ which was crystallized out from the grainboundary phase. The 5-hr sintered specimens had higher degree of crystallization than the 1.5 hr sintered specimens. Among these three different specimens the 5-hr sintered specimens showed the highest strength by hot MOR test at 1, 00$0^{\circ}C$. The SPT diagram for the 5-hr sintered $Si_3N_4$ was constructed by measurements of the stress rate dependence of fracture strength.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.16-21
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• 2005

The effect of additive composition, using AlN and $Er_{2}O_{3}$ as sintering additives, on the mechanical properties of liquid-phase-sintered, and subsequently annealed SiC ceramics was investigated. The microstructures developed were quantitatively analyzed by image analysis. The average thickness of SiC grains increased with increasing the $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio in the additives whereas the aspect ratio decreased with increasing the ratio. The mechanical properties versus $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio curve had a maximum; i.e., there was a small composition range at which optimum mechanical properties were realized. The best results were obtained when the ratio ranged from 0.4 to 0.6. The flexural strength and fracture toughness of the SiC ceramics were $550\~650\;MPa$ and $5.5\~6.5$ MPa${\cdot}m^{1/2}$, respectively.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.43-48
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• 2017

In this study, we investigate the effect of additive size on the densification and thermal conductivity of AlN ceramics with $MgO-CaO-Al_2O_3-SiO_2$ (MCAS) additives. Micro-sized MCAS powder prepared via melting and nano-sized MCAS powder synthesized via the polymeric complex method are used as sintering additives. We analyze the densification behavior of AlN added with 5 wt.% of MCAS by dilatometry as well as by isothermal sintering in the temperature range of $1300{\sim}1700^{\circ}C$. AlN exhibits higher sinterability with nano-MCAS than with micro-MCAS, and both specimens approach their maximum densities when sintered at $1600^{\circ}C$ for 4 h. The thermal conductivities of AlN with 5 wt% of nano- and micro-MCAS additives sintered at $1600^{\circ}C$ are 82.6 and 32.0 W/mK, respectively. We find that nano-MCAS is more effective in sintering of AlN ceramics at lower temperatures, and thus for enhancing their thermal conductivities.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.285-292
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• 1996

The effect of AlN on the thermal conductivity of aluminum oxide pressurelessly sintered at nitrogen atmos-phere was investigated. Increasing aluminium nitride content up to 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singnificantly decreased and was constant with adding 20 and 25 mol% aluminium nitride. The thermal conuctivity of $Al_{2}O_{3}$ containing 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singificantly decreased and was constant with adding 20 and 25mol% aluminum nitride. The thermal conctivity of $Al_{2}O_{3}$ containing 1~10 mol% AlN showed a maximum at $1700^{\circ}C$ and decrea-sed with increasing sintering tempertures. This phenomenon was attributed to $\alpha$-$Al_{2}O_{3}$ and ALON formed by reacting $Al_{2}O_{3}$ with AlN up to $1700^{\circ}C$ and the secondary phases such as ${\gamma}$-ALON ($9Al_{2}O_{3}$.AlN)and $\Phi$($5Al_{2}O_{3}$.AlN) phase above $1750^{\circ}C$ The thermal conductivity of $Al_{2}O_{3}$ containing 20 and 25 mol% AlN showed maximum value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ while only AlON phase existed above $1650^{\circ}C$.

• The Journal of Advanced Prosthodontics
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• v.5 no.4
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• pp.485-493
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• 2013

PURPOSE. To evaluate the effects of surface treatments on shear bond strength (SBS) between microwave and conventionally sintered zirconia core/veneers. MATERIALS AND METHODS. 96 disc shaped Noritake Alliance zirconia specimens were fabricated using YenaDent CAM unit and were divided in 2 groups with respect to microwave or conventional methods (n=48/group). Surface roughness (Ra) evaluation was made with a profilometer on randomly selected microwave (n=10) and conventionally sintered (n=10) cores. Specimens were then assessed into 4 subgroups according to surface treatments applied (n=12/group). Groups for microwave (M) and conventionally (C) sintered core specimens were as follows; $M_C$,$C_C$: untreated (control group), $M_1,C_1:Al_2O_3$ sandblasting, $M_2,C_2$:liner, $M_3,C_3:Al_2O_3$ sandblasting followed by liner. Veneer ceramic was fired on zirconia cores and specimens were thermocycled (6000 cycles between $5^{\circ}-55^{\circ}C$). All specimens were subjected to SBS test using a universal testing machine at 0.5 mm/min, failure were evaluated under an optical microscope. Data were statistically analyzed using Shapiro Wilk, Levene, Post-hoc Tukey HSD and Student's t tests, Two-Way-Variance- Analysis and One-Way-Variance-Analysis (${\alpha}$=.05). RESULTS. Conventionally sintered specimens ($1.06{\pm}0.32{\mu}m$) showed rougher surfaces compared to microwave sintered ones ($0.76{\pm}0.32{\mu}m$)(P=.046), however, no correlation was found between SBS and surface roughness (r=-0.109, P=.658). The statistical comparison of the shear bond strengths of $C_3$ and $C_1$ group (P=.015); $C_C$ and $M_C$ group (P=.004) and $C_3$ and $M_3$ group presented statistically higher (P=.005) values. While adhesive failure was not seen in any of the groups, cohesive and combined patterns were seen in all groups. CONCLUSION. Based on the results of this in-vitro study, $Al_2O_{3-}$ sandblasting followed by liner application on conventionally sintered zirconia cores may be preferred to enhance bond strength.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.392-396
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• 2009

AlON was fabricated by the pressureless reaction sintering of $Al_2O_3$-AlN powder mixtures. The ratio of AlN to $Al_2O_3$ as well as various sintering aids were the main variables for this study. The optimum ratio of AlN in the $Al_2O_3$-AlN mixture was approximately 35.0 mol%. For the sintering aids, only when a small amount of MgO was added together with $Y_2O_3$ and BN, AlON specimens could be sintered to a full density with negligible pores and high transparency. Other combinations of $Y_2O_3$, BN, CaO and MgO resulted in enough pores in the sintered specimens to have in-line transmittance only between 0% and 30%. The in-line transmittance reached over 80% after sintering at $1975^{\circ}C$ for 10 h for the specimen containing 0.15 wt% MgO, 0.08 wt% $Y_2O_3$ and 0.02 wt% BN.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.116-123
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• 2007

Electrical properties of AlN ceramics sintered with 1 wt% $Y_2O_3$ have been investigated. From the impedance spectroscopy, electrical conductivity of grain boundary was found to be much lower than that of grain. DC conductivity measurement showed the electrode polarization effects caused by blocking electrode. The heat-treatment at $1700^{\circ}C$ of the specimen sintered at $1850^{\circ}C$ transformed continuous pain boundary phases along triple boundary junctions into isolated particles in grain comers. The heat-treatment induced decreases both in grain and grain boundary conductivity, and in DC electrical conductivities. From the analysis on the transference number, ionic conductivity was shown to be more dominant than electron conductivity, which was due to ion compensation mechanism during oxygen incorporation into grain.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.361-365
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• 1984

This study has been carried out to sinter silicon nitride with additives and to show the effect of surface finishments on its strength and Weibull modulus which are two most important factors for its applications into structural ceramics. Silicon nitride was sintered with the additions of $Al_2O_3$ and $Y_2O_3$ under pressureless cond-ition. The optimum properties were obtained by sintering at 1, 75$0^{\circ}C$ for 3hrs under $N_2$ atmosphere and the strength showed 6, 500kg/$cm^2$ at room temperature and 3, 300kg/$cm^2$ at 120$0^{\circ}C$. The effects of surface treatment on the strength of sintered $Si_3N_4$ were studied and the results showed that fine surface treatment increased the strength by up to 50% The Weibull analysis showed that its modulus was increased with increasing fineness of surface finishments. It was concluded that the mechanical properties of sintered silicon nitride could be improved by fine surface grinding which implied the brittle-fracture nature of sintered silicon nitride.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.247-255
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• 2000

Silicon carbide with sialon was prepared by hot pressing and transient liquid-phase sintering, and the effects of sintering atmosphere and starting phases on their microstructural characteristics were investigated. The sintered SiC with Sialon composition(Y2O3, AlN, Si3N4) in argon atmosphere had high sintered density and large aspect ratio. But sintered specimens in nitrogen atmosphere showed low aspect ratio and small grian size, becuase of the retardation of phase transformation and grain growth. Addition of Y-Sialon powder to SiC also retarded the phase transformation to ${\alpha}$-SiC from ${\beta}$-SiC and densification. The SiC specimen prepared from the starting ${\beta}$-SiC powder with Sialon composition(Y2O3, AlN, Si3N4) showed the highest fracture toughness about 6.0 MPa$.$m1/2.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.