• 제목/요약/키워드: Single-switching state

검색결과 111건 처리시간 0.028초

광 네트워크를 위한 Hybrid 스위칭 시스템의 성능 분석 (Performance Analysis of an Hybrid Switching System for Optical Networks)

  • 이규명;;;최준균
    • 대한전자공학회논문지TC
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    • 제40권10호
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    • pp.16-23
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    • 2003
  • 본 논문에서 광 네트워크에서 광 버스트 스위칭(Optical Burst Switching, OBS)과 광 회선 스위칭 (Optical Circuit Switching, OCS) 기술의 장점을 동시에 가지는 새로운 광 hybrid 스위칭(Optical Hybrid Switching) 시스템을 제안한다. 이 시스템은 들어오는 IP 트래픽을 hybrid 스위칭을 위해 짧은(short-lived) 흐름과 긴(long-lived) 흐름 구분한다. 성능 분석을 위하여 시스템을 Markovian 환경에서 단일 서버 큐로서 모델링 한다. 버스트 생성 프로세스는 two-state Markov Modulated Poisson Process (MMPP)를 따른다고 가정하고 서비스 율은 동시에 발생하는 OCS 세션의 수에 따라 변한다. OBS 버스트에 대한 평균 지연 및 큐 사이즈의 결과를 보인다.

Some Properties of Heterogeneous Multi-server Systems with the Switching Rules

  • Ahn, Yunkee
    • 한국경영과학회지
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    • 제4권1호
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    • pp.41-51
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    • 1979
  • The Classical multi-server heterogeneous queuing system can be more generalized by using the concept of the switching rules. The descriptions of these systems, the relations among the state probebilities at the various points of interest, and comparisons with the single-server system will be presented. Instead of using the imbedded markov chain we set up the simultaneous equations for the state probabilites by the supplementary variable method.

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예측 상태 관측기를 이용한 3상 전압 원 PWM 컨버터의 단일 센서 전류 제어 (Single Sensor Current Control for Three-Phase Voltage-Source PWM Converters Using a Predictive State Observer)

  • 이우철;현동석;이택기
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1999년도 전력전자학술대회 논문집
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    • pp.489-492
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    • 1999
  • This paper proposes a control method for three-phase voltage-source PWM converters using only a single current sensor in the DC link. A predictive current controller for the voltage-source PWM converter is used so that all phase currents can be reconstructed in a switching period although one or two of active vectors are applied only for a short time. Compensation of the 2 step delays is also included. In this paper single sensor current control using predictive state observer will be discussed, and investigated experimentally.

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무선 패킷 데이터를 위한 Burst switching의 모델링 및 분석 (Modeling and Analysis of Burst Switching for Wireless Packet Data)

  • 박경인;이채영
    • 대한산업공학회지
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    • 제28권2호
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    • pp.139-146
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    • 2002
  • The third generation mobile communication needs to provide multimedia service with increased data rates. Thus an efficient allocation of radio and network resources is very important. This paper models the 'burst switching' as an efficient radio resource allocation scheme and the performance is compared to the circuit and packet switching. In burst switching, radio resource is allocated to a call for the duration of data bursts rather than an entire session or a single packet as in the case of circuit and packet switching. After a stream of data burst, if a packet does not arrive during timer2 value ($\tau_{2}$), the channel of physical layer is released and the call stays in suspended state. Again if a packet does not arrive for timerl value ($\tau_{1}$) in the suspended state, the upper layer is also released. Thus the two timer values to minimize the sum of access delay and queuing delay need to be determined. In this paper, we focus on the decision of $\tau_{2}$ which minimizes the access and queueing delay with the assumption that traffic arrivals follow Poison process. The simulation, however, is performed with Pareto distribution which well describes the bursty traffic. The computational results show that the delay and the packet loss probability by the burst switching is dramatically reduced compared to the packet switching.

Topology-aware Virtual Network Embedding Using Multiple Characteristics

  • Liao, Jianxin;Feng, Min;Li, Tonghong;Wang, Jingyu;Qing, Sude
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제8권1호
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    • pp.145-164
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    • 2014
  • Network virtualization provides a promising tool to allow multiple heterogeneous virtual networks to run on a shared substrate network simultaneously. A long-standing challenge in network virtualization is the Virtual Network Embedding (VNE) problem: how to embed virtual networks onto specific physical nodes and links in the substrate network effectively. Recent research presents several heuristic algorithms that only consider single topological attribute of networks, which may lead to decreased utilization of resources. In this paper, we introduce six complementary characteristics that reflect different topological attributes, and propose three topology-aware VNE algorithms by leveraging the respective advantages of different characteristics. In addition, a new KS-core decomposition algorithm based on two characteristics is devised to better disentangle the hierarchical topological structure of virtual networks. Due to the overall consideration of topological attributes of substrate and virtual networks by using multiple characteristics, our study better coordinates node and link embedding. Extensive simulations demonstrate that our proposed algorithms improve the long-term average revenue, acceptance ratio, and revenue/cost ratio compared to previous algorithms.

SOI 웨이퍼를 이용한 Top emission 방식 AMOLEDs의 스위칭 소자용 단결정 실리콘 트랜지스터 (Single Crystal Silicon Thin Film Transistor using 501 Wafer for the Switching Device of Top Emission Type AMOLEDs)

  • 장재원;김훈;신경식;김재경;주병권
    • 한국전기전자재료학회논문지
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    • 제16권4호
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    • pp.292-297
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    • 2003
  • We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

유전율 이방성이 음인 액정을 이용한 FFS 모드의 단일 갭형 반투과형 액정 디스플레이 연구 (Study on single gap transflective fringe-fields switching liquid crystal display using the liquid crystal with negative dielectric anisotropy)

  • 김진호;진미형;임영진;이승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.312-313
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    • 2008
  • A transflective liquid crystal displays associated with fringe field switching (FFS) mode of new concept is proposed. The device utilizes unique characteristic of the FFS mode in which the rotation angle of LC director is strongly dependent on electrode position in on state. We use the liquid crystal with negative dielectric anisotropy. Also we are look for optimized electrode size and the optimization of pixel electrode width and distance between them, the LC director could rotate about $22.5^{\circ}$ and $45^{\circ}$ depending on electrode positions. Consequently, we get high transmittance and high reflection on the optimized electrode condition. Respectively, a high image quality transflective display with single gap and single gamma characteristics realized.

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스위칭 손실 저감을 위한 기준전류 기울기를 이용한 단상 히스테리시스 전류 제어에 관한 연구 (A Study of Single Phase Hysteresis Current Control Using Reference Current Slope for Reducing Switching Loss)

  • 홍선기
    • 조명전기설비학회논문지
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    • 제23권1호
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    • pp.150-155
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    • 2009
  • 히스테리시스 전류 제어방식은 원리와 구조가 간단하여 널리 사용되었으나, 전류 오차 허용 밴드폭이 너무 작거나, 전원 전압이 상대적으로 너무 큰 경우 등에는 스위칭 주파수가 급격히 증가하여 많은 열을 발생할 수 있는 등의 단점이 있었다. 이에 본 연구에서는 단상 전류제어에서 0 모드를 추가하고, 기준 전류의 기울기를 비교하여 히스테리시스 전류 제어를 수행함으로써 대폭적인 스위칭 주파수 감소와 안정적인 전류제어가 가능하게 하였다. 또한 이를 컴퓨터 시뮬레이션을 통해 그 타당성을 확인하였다.

Random PWM 기법을 이용한 3상 승압형 컨버터 전도노이즈 저감에 관한 연구 (A study on the Conducted Noise Reduction in Three-Phase Boost Converter using Random Pulse Width Modulation)

  • 정동효
    • 전기학회논문지P
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    • 제51권3호
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    • pp.120-125
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    • 2002
  • The switching-mode power converter has been widely used because of its features of high efficiency and small weight and size. These features are brought by the ON-OFF operation of semiconductor switching devices. However, this switching operation causes the surge and EMI(Electromagnetic Interference) which deteriorate the reliability of the converter themselves and entire electronic systems. This problem on the surge and noise is one of the most serious difficulties in AC-to-DC converter. In the switching-mode power converter, the output voltage is generally controlled by varying the duty ratio of main switch. When a converter operates in steady state, duty ratio of the converter is kept constant. So the power of switching noise is concentrated in specific frequencies. Generally, to reduce the EMI and improve the immunity of converter system, the switching frequency of converter needs to be properly modulated during a rectified line period instead of being kept constant. Random Pulse Width Modulation (RPWM) is performed by adding a random perturbation to switching instant while output-voltage regulation of converter is performed. RPWM method for reducing conducted EMI in single switch three phase discontinuous conduction mode boost converter is presented. The more white noise is injected, the more conducted EMI is reduced. But output-voltage is not sufficiently regulated. This is the reason why carrier frequency selection topology is proposed. In the case of carrier frequency selection, output-voltage of steady state and transient state is fully regulated. A RPWM control method was proposed in order to smooth the switching noise spectrum and reduce it's level. Experimental results are verified by converter operating at 300V/1kW with 5%~30% white noise input. Spectrum analysis is performed on the Phase current and the CM noise voltage. The former is measured with Current Probe and the latter is achieved with LISN, which are connected to the spectrum analyzer respectively.

Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate-All-Around PMOS Silicon Nanowire Field-Effect-Transistors

  • Hong, Byoung-Hak;Lee, Seong-Joo;Hwang, Sung-Woo;Cho, Keun-Hwi;Yeo, Kyoung-Hwan;Kim, Dong-Won;Jin, Gyo-Young;Park, Dong-Gun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권2호
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    • pp.80-87
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    • 2011
  • Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire field-effect-transistors with the radius of 5 nm and lengths of 44-46 nm are presented. They show coexisting two single hole states randomly switching between each other. Analysis of Coulomb diamonds of these two switching states reveals a variety of electrostatic effects which is originated by the potential of a single hole captured in the trap near the nanowire.