• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.485-485
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• 2009

Double side polishing process has been used for various industrial applications, such as polishing of semiconductor substrates and flat panel display glasses. In wafer manufacturing, double side polishing process is applied to improve wafer flatness and to minimize particle generation from wafers in device manufacturing processes, which is recognized as one of the most important processes. Whereas the kinematical modeling and analysis results of single side polishing, extensively used for chemical-mechanical polishing (CMP) in device manufacturing, are well investigated, the studies in conjunction with double side polishing are barely carried out, due to the complication of polishing system and the uncertainty of wafer motion in the carrier. This paper suggests the derivation of kinematical model with consideration of carrier and wafer motion in double side polishing, and then presents the effect of kinematical parameters on material removal amount and its non-uniformity. The kinematical analysis results help to understand the double side polishing process and to control the polishing results.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.90-95
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• 2007

Single side final polishing is a very important role to stabilize a wafer finally before the device process on the wafer is executed. In this study, the machining variables, such as pressure, machining time, and the velocity of pad table were adopted. These parameters have the major influence on the characteristics of wafer polishing. We investigated the surface roughness changing these variables to find the optimal polishing condition. Pad, slurry, slurry quantity, and oscillation distance were set to the fixed variables. In order to reduce defects and find a stable machining condition, a hall sensor was used on the polishing process. AE sensor was attached to the polishing machine to verify optimal condition. Applying data analysis of the sensor signal, experiments were performed. We can get better surface roughness from loading the quasi static force and improving wafer-holding method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.751-752
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.372-373
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• 2004

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.149-150
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• 2012

• Tribology and Lubricants
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• v.32 no.2
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.89-93
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• 2020

Complex warpage behavior of the electronic packages causes internal stress so many kinds of mechanical failure occur such as delamination or crack. Efforts to predict the warpage behavior accurately in order to prevent the decrease in yield have been approached from various aspects. For warpage prediction, silicon is generally treated as a homogeneous material, therefore it is described as showing no warpage behavior due to thermal loading. However, it was reported that warpage is actually caused by residual stress accumulated during grinding and polishing in order to make silicon wafer thinner, which make silicon wafer inhomogeneous through thickness direction. In this paper, warpage behavior of the single-side polished wafer at solder reflow temperature, the highest temperature in packaging processes, was measured using 3D digital image correlation (DIC) method. Mechanism was verified by measuring coefficient of thermal expansion (CTE) of both mirror-polished surface and rough surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.5
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• pp.550-555
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• 2007

The effective fracture toughness testing of materials intended for application in Micro Electro Mechanical Systems (MEMS) devices is required in order to improve understanding of how micro sized material used in device may be expected to perform upon the micro scale. ${\gamma}$-TiAl based materials are being considered for application in MEMS devices at elevated temperatures. Especially, in Alloy 4, both ${\alpha}_2$ and ${\gamma}$ lamellae were altered markedly in 3,000 h, $700^{\circ}C$ exposure. Parallel decomposition of coarse ${\alpha}_2$ into bunches of very fine (${\alpha}_2+{\gamma}$) lamellae. Parallel decomposition of coarse ${\alpha}_2$ into bunches of very fine (${\alpha}_2+{\gamma}$) lamellae. The materials were examined 2 types Alloy 4 on heat exposed specimen($700^{\circ}C$, 3,000 h) and no heat exposed one. Micro sized cantilever beams were prepared mechanical polishing on both side at $25{\sim}30{\mu}m$ and electro final stage polishing to observe lamellar orientation of same colony with EBSD (Electron Backscatter Diffraction Pattern). Through lamellar orientation as inter-lamellae or trans-lamellae, Cantilever beam was fabricated with Focused Ion Beam(FIB). The directional behavior of the lamellar structure was important property in single material, because of the effects of the different processing method and variations in properties according to lamellar orientation. In MEMS application, it is first necessary to have a reliable understanding of the manufacturing methods to be used to produce micro structure.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.326-332
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• 2010

We review the research on specialty fiber couplers with emphasis placed on the characteristics that make them attractive for biomedical imaging, optical communications, and sensing applications. The fabrication of fiber couplers has been carried out with, in addition to conventional single mode fiber, various specialty fibers such as photonic crystal fiber, double clad fiber, and hole-assisted fiber with a Ge-doped core. For the fiber coupler fabrication, the side polishing and the fused biconical tapered methods have been developed. These specialty fiber couplers have been applied to optical coherence tomography, fluorescence spectroscopy, fiber sensors, and optical communication systems. This review aims to provide a detailed statement on the recent progress and novel applications of specialty fiber couplers.