• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.5-8
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• 2002

Hot carrier induced device degradation is observed in thin-film, gate-all-around SOI transistor under DC stress conductions. We observed the more significant device degradation in GAA device than general single gate SOI device due to the degradation of edge transistor. Therefore, it is expected that the maximum available supply voltage of GAA transistor is lower than that o( bulk MOSFET or single gale SOI device.

• Journal of Power Electronics
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• 제10권4호
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• pp.365-373
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• 2010

This paper proposes a hybrid single carrier sinusoidal modulation suitable for multiphase multilevel inverters. Multiphase multilevel inverters are controlled by hybrid modulation to provide multiphase variable voltage and a variable frequency supply. The proposed modulation combines the benefits of fundamental frequency modulation and single carrier sinusoidal modulation (SC-SPWM) strategies. The main characteristics of hybrid modulation are a reduction in switching losses and improved harmonic performance. The proposed algorithm can be applied to cascaded multilevel inverter topologies. It has low computational complexity and it is suitable for hardware implementations. SC-SPWM and its base modulation design are implemented on a TMS320F2407 digital signal processor (DSP). A Complex Programmable Logic Device realizes the hybrid PWM algorithm and it is integrated with a DSP processor for hybrid SC-SPWM generation. The feasibility of this hybrid modulation is verified by spectral analysis, power loss analysis, simulation and experimental results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.53-53
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• 2010

Graphene comes into the spotlight as an emergent device material on account of its high carrier mobility reflecting its massless Dirac fermion behavior. Chemical technique to control reversibly the carrier concentration of semiconducting graphene for the achievement of a large-area graphene device has been strongly required. Here we show that the adsorptions of a metal and a molecule can manipulate the carrier concentration of single-layer graphene, epitaxially grown on SiC, which was directly observed using angle-resolve photoemission spectroscopy. These results will shed light on the researches for the very large scale integration of a graphene device. Furthermore, the carrier concentration changes can be applied to a highly sensitive gas sensor or a detector for an specific binding between an antigen and an antibody.

• 폴리머
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• 제26권4호
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• pp.543-550
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• 2002

곁사슬에 정공 및 전자 전달체로 triphenylamine moiety와 triazine moiety를 갖는 새로운 공중합체를 합성하였다. ITO/공중합체와 발광물질 (DCM, coumarin 6, DPvBi)/Al으로 구성되는 단층형 유기 EL 소자는 정공 전달 단위체와 전자 전달 단위체 비율이 6:4와 방광물질의 함유량이 30 wt%일 때 최고의 외부 양자 효율을 나타내었다. 특히 위에서 제작한 유기 EL 소자는 각각 발광물질에 상응하는 빨강 (620 nm), 초록 (520 nm)과 파랑색 (450 nm)의 빛을 발광하였다. 최고 휘도는 DC 12V에서 ITO/공중합체 (6:4)와 DCM (30 wt%)/Al으로 구성되는 소자를 구동하였을 때 500 cd/$m^2$이었다.

• 센서학회지
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• 제22권3호
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• 대한전기학회논문지
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• 제32권6호
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• pp.205-210
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• 1983

This paper presents a steady-state computer solution of the fundamental semiconductor one-dimensional transport equations, describing a single (metal-semiconductor) contact device, involving only one type of charge carrier. The computations are conveniently made by the

• 국제물리치료학회지
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• 제10권2호
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• pp.1774-1778
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• 2019

Background : Methods of wearing a baby carrier have suggested; however, there have been no studies suggesting ideal ways. Objective : To investigate muscular fatigue and balance of the waist during baby carrier are worn on the front, the side, and the back of the body. Design: Randomized controlled clinical trial (single blind) Methods : The subjects of this study were 20 healthy men and women in their 20s, who underwent tests of muscular fatigue and balance of the waist bones based on types of wearing baby carrier. Electromyogram (EMG) patches were attached to the L2 and the L4 for testing muscular fatigue, while a device for measuring proprioceptive senses was used to assess balance ability. The measurements were performed before wearing the baby carrier and after 30 minutes of normal walking. The methods of wearing the baby carrier included wearing on the front, the side, and the back of the body. Results : The time taken to adjust the balance was shorter than other types of wearing during the baby carrier were worn on the side, and the ratio of lumbar flexion and relaxation was shown insignificant. Conclusions : These results suggested that wearing the carriers on the side was most effective on reducing fatigue and enhancing balance ability of the waist.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• 한국통신학회논문지
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• 제38A권4호
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• pp.325-336
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• 2013

대표적인 D2D (Device-to-Device) 통신 시스템 중 하나인 Qualcomm사의 FlashLinQ 시스템에서는 링크 스케줄링 과정을 낮은 복잡도로 실현할 수 있도록 하기 위해 단일-톤 (single-tone) 신호를 이용한 우선순위 및 SIR (Signal-to-Interference power Ratio) 기반의 링크 스케줄링 기법을 수행한다. 하지만 다중 경로 채널 환경에서는 주파수 선택적 페이딩의 영향으로 단일-톤 위치에서와 실제 데이터가 전송되는 전체 대역에서의 수신 전력 간 오차가 발생할 수 있으며, 이는 공평성 측면에서 문제가 될 뿐만 아니라 셀 전체 전송률 상의 손실을 일으킬 수 있다. 따라서, 본 논문에서는 이러한 문제를 해결하기 위해 CAZAC (Constant Amplitude Zero Auto-Correlation) 시퀀스의 상관 특성을 이용해 전체 대역에 대한 SIR 에 가까운 값을 획득할 수 있는 링크 스케줄링 기법을 제안한다. 제안 기법은 전체 대역을 다수의 sub-block 으로 구분하고 각 sub-block 마다 링크의 우선순위에 해당하는 순환 오프셋 (cyclic offset) 을 적용한 CAZAC 시퀀스를 전 대역에 걸쳐 전송하여, 수신 신호와 참조 신호간의 순환 상호 상관 연산 (cyclic cross-correlation)을 통해 전체 대역에 대한 SIR 에 근접한 값을 획득할 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.