Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
- /
- Pages.207-207
- /
- 2006
Electric Property Analysis of SiC Semiconductor Wafer for Power Device Application
- Kim, Jeong-Gon ;
-
An, Jun-Ho
;
- Seo, Jeong-Du ;
- Kim, Jeong-Gyu ;
- Gyeon, Myeong-Ok ;
-
Lee, Won-Jae
;
-
Kim, Il-Su
;
-
Sin, Byeong-Cheol
;
- Gu, Gap-Ryeol
- 김정곤 (동의대학교 대학원 신소재나노공학과) ;
-
안준호
(동의대학교 대학원 신소재나노공학과)
;
- 서정두 (동의대학교 전자세라믹스센터) ;
- 김정규 (동의대학교 전자세라믹스센터) ;
- 견명옥 (동의대학교 전자세라믹스센터) ;
-
이원재
(동의대학교 전자세라믹스센터)
;
-
김일수
(동의대학교 전자세라믹스센터)
;
-
신병철
(동의대학교 전자세라믹스센터)
;
- 구갑렬 (크리스밴드)
- Published : 2006.11.09
Abstract
We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about
Keywords