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Synchronous Buck Converter with High Efficiency and Low Ripple Voltage for Mobile Applications (고 효율 저 리플 전압 특성을 갖는 모바일용 동기 형 벅 컨버터)

  • Yim, Chang-Jong;Kim, Jun-Sik;Park, Shi-Hong
    • Journal of IKEEE
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    • v.15 no.4
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    • pp.319-323
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    • 2011
  • In this paper presents a new model of dual-mode synchronous buck converter with dynamic control for mobile applications was proposed. The proposed circuit can operate at 2.5MHz with supply voltage 2.5V to 5V for low ripple and minimum inductor and capacitor size, which is suitable for single-cell lithium-ion battery supply mobile applications. For high efficiency, the proposed circuit adopts synchronous type and dynamic control. The proposed circuit is designed by using the device parameter of TSMC 0.18um BCD process and the performance is evaluated by Cadence spectre. Experimental board level results show the maximum conversion efficiency is 96% at 100mA load current.

Optimal Location of FACTS Devices Using Adaptive Particle Swarm Optimization Hybrid with Simulated Annealing

  • Ajami, Ali;Aghajani, Gh.;Pourmahmood, M.
    • Journal of Electrical Engineering and Technology
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    • v.5 no.2
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    • pp.179-190
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    • 2010
  • This paper describes a new stochastic heuristic algorithm in engineering problem optimization especially in power system applications. An improved particle swarm optimization (PSO) called adaptive particle swarm optimization (APSO), mixed with simulated annealing (SA), is introduced and referred to as APSO-SA. This algorithm uses a novel PSO algorithm (APSO) to increase the convergence rate and incorporate the ability of SA to avoid being trapped in a local optimum. The APSO-SA algorithm efficiency is verified using some benchmark functions. This paper presents the application of APSO-SA to find the optimal location, type and size of flexible AC transmission system devices. Two types of FACTS devices, the thyristor controlled series capacitor (TCSC) and the static VAR compensator (SVC), are considered. The main objectives of the presented method are increasing the voltage stability index and over load factor, decreasing the cost of investment and total real power losses in the power system. In this regard, two cases are considered: single-type devices (same type of FACTS devices) and multi-type devices (combination of TCSC, SVC). Using the proposed method, the locations, type and sizes of FACTS devices are obtained to reach the optimal objective function. The APSO-SA is used to solve the above non.linear programming optimization problem for better accuracy and fast convergence and its results are compared with results of conventional PSO. The presented method expands the search space, improves performance and accelerates to the speed convergence, in comparison with the conventional PSO algorithm. The optimization results are compared with the standard PSO method. This comparison confirms the efficiency and validity of the proposed method. The proposed approach is examined and tested on IEEE 14 bus systems by MATLAB software. Numerical results demonstrate that the APSO-SA is fast and has a much lower computational cost.

Boost Type ZVS-PWM Chopper-Fed DC-DC Power Converter with Load-Side Auxiliary Resonant Snubber and Its Performance Evaluations

  • Ogura, Koki;Chandhaket, Srawouth;Ahmed, Tarek;Nakaoka, Mutsuo
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • v.3B no.3
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    • pp.147-154
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    • 2003
  • This paper presents a high-frequency boost type ZVS-PWM chopper-fed DC-DC power converter with a single active auxiliary edge-resonant snubber at the load stage which can be designed for power conditioners such as solar photovoltaic generation, fuel cell generation, battery and super capacitor energy storages. Its principle operation in steady-state is described in addition to a prototype setup. The experimental results of boost type ZVS-PWM chopper proposed here, are evaluated and verified with a practical design model in terms of its switching voltage and current waveforms, the switching v-i trajectory and the temperature performance of IGBT module, the actual power conversion efficiency, and the EMI of radiated and conducted emissions, and then discussed and compared with the hard switching scheme from an experimental point of view. Finally, this paper proposes a practical method to suppress parasitic oscillation due to the active auxiliary resonant switch at ZCS turn-off mode transition with the aid of an additional lossless clamping diode loop, and can be reduced the EMI conducted emission.

GA based Selection Method of Weighting Matrices in LQ Controller for SVC (GA를 이용한 SVC용 LQ 제어기의 가중행렬 선정 기법)

  • 허동렬;이정필;주석민;정형환
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.6
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    • pp.40-50
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    • 2002
  • In this paper, we present a GA(Genetic Algorithm) approach to select weighting matrices of an optimal LQ(Linear Quadratic) controller for SVC(Static VAR Compensator). A SVC, one of the FACTS(Flexible AC Transmission System), constructed by a FC(Fixed Capacitor) and a TCR(Thyristor Controlled Reactor), was designed and implemented to improve the damping of a synchronous generator, as well as to control the system voltage Also, a design of LQ controller depends on choosing weighting matrices. The selection of weighting matrices which is not a trivial solution is usually carried out by trial and error. We proposed an efficient method using GA of finding weighting matrices for optimal control law. Thus, we proved the usefulness of proposed method to improve the stability of single machine-infinite bus with SVC system by eigenvalues analysis and simulation.

Wireless Power Transfer for Electric Vehicles Charging Based on Hybrid Topology Switching With a Single Inverter

  • Chen, Yafei;Zhang, Hailong;Kim, Dong-Hee;Park, Sung-Jun;Park, Seong-Mi
    • Journal of the Korean Society of Industry Convergence
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    • v.23 no.2_1
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    • pp.115-124
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    • 2020
  • In wireless power transfer (WPT) system, the conventional compensation topologies only can provide a constant current (CC) or constant voltage (CV) output under their resonant conditions. It is difficult to meet the CC and CV hybrid charging requirements without any other schemes. In this study, a switching hybrid topology (SHT) is proposed for CC and CV electric vehicle (EV) battery charging. By utilizing an additional capacitor and two AC switches (ACSs), a double-side LCC (DS-LCC) and an inductor and double capacitors-series (LCC-S) topologies are combined. According to the specified CC and CV charging profile, the CC and CV charging modes can be flexibly converted by the two additional ACSs. In addition, zero phase angle (ZPA) also can be achieved in both charging modes. In this method, because the operating frequency is fixed, without using PWM control, and only a small number of devices are added, it has the benefits of low-cost, easy-controllability and high efficiency. A 3.3-kW experimental prototype is configured to verify the proposed switching hybrid charger. The maximum DC efficiencies (at 3.3-kW) of the proposed SHT is 92.58%.

Electrical characteristics of SiC thin film charge trap memory with barrier engineered tunnel layer

  • Han, Dong-Seok;Lee, Dong-Uk;Lee, Hyo-Jun;Kim, Eun-Kyu;You, Hee-Wook;Cho, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.255-255
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    • 2010
  • Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

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A Rotary Capacitive-Wireless Power Transfer System for Power Supply of a Wireless Sensor System on Marine Rotating Shaft (선박 회전축의 무선 센서 시스템의 전원 공급을 위한 회전식 정전용량-무선 전력 전송 시스템)

  • Van Ai Hoang;Young Chul Lee
    • Journal of Advanced Navigation Technology
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    • v.27 no.1
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    • pp.63-70
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    • 2023
  • In this work, a capacitive wireless power transfer (C-WPT) system is presented for wireless sensor system (WSS) applications in marine propulsion shafts. For a single Q factor on both sides of the coupling capacitor and reactive power removal from the circuit, a double-sided LCLC converter and transformers topology are designed to drive the rotary C-WPT system for WSS on the shaft. Parallel-connected parallel plate rotating capacitors with a capacitance of 170 pF are designed and implemented for the C-WPT system on a snow rotating shaft. In the experimental results, the C-WPT system achieved a transmission efficiency of 66.67% with 7.8 W output power at 3 mm distance and 1 MHz operating frequency. Therefore, it was proved that the fabricated C-WPT system can supply power to the WSS of the rotating shaft.

A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate (선택적 산화 알루미늄 기판을 이용한 소형 2.5 GHz 8 W GaN HEMT 전력 증폭기 모듈)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.12
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    • pp.1069-1077
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    • 2011
  • In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

Tri-Band Folded Monopole Antenna Design with MNG Single Cell Metamaterial Loading (MNG 단일셀 메타매질 부하를 갖는 삼중대역 폴디드 모노폴 안테나 설계)

  • Lee, Young-Hun
    • Journal of IKEEE
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    • v.22 no.1
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    • pp.127-135
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    • 2018
  • This paper was studied the tri-band folded monopole antenna design with Mu-negative metamaterial unit cell, which operates at 700 MHz UHD broadcast band and 2.45 GHz/5 GHz WiFi band. The MNR metamaterial is fabricated by forming a capacitor on the backside of the antenna substrate and connecting it to the ground plane through a strip line and a via hole so that a single cell can operate in the MZR (Mu zero resonator). Through this, the resonance point can be controlled to resonate in the zero mode in 700 MHz band, and the bandwidth is improved. Experimental results show that the 10dB bandwidth and gain are 309 MHz (41.2%) and 5.298 dB at the first resonance point, and the 10dB bandwidth and gain at the second resonance point are 821.9 MHz (33.5%) and 2.7840 dB respectively. At the third resonance point, the gain and bandwidth were 1.1314 GHz (20.6%) and 2.9484 dB respectively. We confirmed that the resonance point with theoretical value is in agreement with experimental value. And the radiation pattern is generally omnidirectional, and it has been confirmed that the radiation pattern is good in both forward and backward directions at 0.75 GHz and 2.45 GHz, and has a radiation pattern with multiple lobes at 5.5 GHz.

Impedance Spectroscopy Models for X5R Multilayer Ceramic Capacitors

  • Lee, Jong-Sook;Shin, Eui-Chol;Shin, Dong-Kyu;Kim, Yong;Ahn, Pyung-An;Seo, Hyun-Ho;Jo, Jung-Mo;Kim, Jee-Hoon;Kim, Gye-Rok;Kim, Young-Hun;Park, Ji-Young;Kim, Chang-Hoon;Hong, Jeong-Oh;Hur, Kang-Heon
    • Journal of the Korean Ceramic Society
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    • v.49 no.5
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    • pp.475-483
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    • 2012
  • High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.