• 열처리공학회지
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• 제29권6호
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• pp.272-276
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• 2016

Al doped ZnO (AZO) single layer and AZO/Ag bi-layered films were deposited on the glass substrates by radio frequency and direct current magnetron sputtering and then the effect of Ag buffer layer on the electrical and optical properties of the films was investigated. The thicknesses of AZO upper layer was kept as 100 nm, while Ag buffer layer was varied from 5 to 15 nm. The observed results mean that opto-electrical properties of the AZO films is influenced with Ag buffer layer and AZO film with 10 nm thick Ag buffer layer show the higher opto-electrical performance than that of the AZO single layer film prepared in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.790-793
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• 2000

We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$ single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1 ${\mu}{\textrm}{m}$. When BaTiO$_3$is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4 $\times$ 10$^4$ A/cm$^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(3)
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• pp.85-86
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• 2001

3D parallel rasterizer on a single chip for high performance generates consistency problem. To solve this problem, 3D parallel rasterizer with consistency buffer Os proposed. This can simultaneously process a plurality of Primitives. Experimental results show 1.1-2.0x speedups using a simple model. This method can achieve high performance and cost effectiveness.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2006년도 High Temperature Superconductivity Vol.XVI
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• pp.91-91
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• 2006

• 경영과학
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• 제24권1호
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• pp.25-34
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• 2007

In this study, we consider stationary waiting times in finite-buffer 3-node single-server queues in series with a Poisson arrival process and with either constant or non-overlapping service times. We assume that each node has a finite buffer except for the first node. The explicit expressions of waiting times in all areas of the stochastic system were driven as functions of finite buffer capacities. These explicit forms show that a system sojourn time does not depend on the finite buffer sizes, and also allow one to compute and compare characteristics of stationary waiting times at all areas under two blocking rules communication and manufacturing blocking. The goal of this study is to apply these results to an optimization problem which determines the smallest buffer capacities satisfying predetermined probabilistic constraints on stationary waiting times at all nodes. Numerical examples are also provided.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.113-116
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• 2003

Confluence buffers and single flux quantum (SFQ) switches are essential components in constructing a high speed superconductive Arithmetic Logic Unit (ALU). In this work, we developed a SFQ confluence buffer and an SFQ switch. It is very important to optimize the circuit parameters of a confluence buffer and an SFQ switch to implement them into an ALU. The confluence buffer that we are currently using has a small bias margin of $\pm$11％. By optimizing it with a Josephson circuit simulator, we improved the design of confluence buffer. Our simulation study showed that we improved bias global margin of 10％ more than the existent confluence buffer. In simulations, the minimal bias margin was $\pm$33％. We also designed, fabricated, and tested an SFQ switch operating in a DC mode. The mask layout used to fabricate the SFQ switch was obtained after circuit optimization. The test results of our SFQ switch showed that it operated correctly and had a reasonably wide margin of $\pm$15％.

• 전자공학회논문지CI
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• 제41권5호
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• pp.9-16
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• 2004

PCI 익스프레스 디바이스의 데이터 연결 계층은 전송할 패킷을 저장하고 있는 송신 버퍼와 전송하였지만 아직 타겟 디바이스로부터 승인 받지 못한 패킷을 저장하고 있는 재전송 버퍼를 가지고 있어야 한다. 이렇게 전송 버퍼와 재전송 버퍼를 구분하여 구현할 경우 전송할 패킷이 전송 버퍼에 있다 하더라도 재전송 버퍼에 여유 공간이 없다면 더 이상 패킷을 전송 할 수 없다는 단점이 있다. 본 논문에서는 한 개의 버퍼로 전송 버퍼와 재전송 버퍼를 구현하는 방법을 제안한다. 제안된 버퍼 구조에서는 필요에 따라 버퍼의 공간을 유연하게 사용할 수 있기 때문에 버퍼 사용 및 데이터 전송 효율을 향상시킬 수 있다. 모의 실험 결과 버퍼의 전체 크기가 8K 바이트일 경우 제안된 방법이 버퍼를 분리하여 사용하는 방법에 비해 데이터 전송 효율이 평균 39% 향상되었다.

• 한국초전도ㆍ저온공학회논문지
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• 제13권1호
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• pp.1-5
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• 2011

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.

• Progress in Superconductivity
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• 제7권1호
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• pp.69-76
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• 2005

Complex single buffer composed of yttrium and samarium oxide was deposited on the metallic substrates by MOCVD (metal organic chemical vapor deposition) method using single liquid source. Two different types of the substrates with in-plane textures of about $8{\sim}10$ degree of Ni and $3at.\%W-Ni$ alloy were used. Y(tmhd: 2,2,6,6-tetramethyl-3,5-heptane dionate)$_3$:Sm(tmhd)$_3$ of liquid source was adjusted to 0.4:0.6 to minimize the lattice mismatch between the complex single buffer and the YBCO. The epitaxial growth of $(Y_{x}Sm_{1-x})_{2}O_3$ was achieved at the temperature higher than $500^{\circ}C$ in $O_2$ atmosphere. However, it was found that the formation of NiO accelerated with increasing deposition temperature. By supplying $H_{2}O$ vapor, this oxidation of the substrate could be suppressed throughout the deposition temperatures. We could get the epitaxial growth on pure Ni substrate without the formation of NiO. The competitive (222) and (400) growths were observed at the deposition temperatures of $650\~750^{\circ}C$, but the (400) growth became dominant above $800^{\circ}C$. The $(Y_{x}Sm_{1-x})_{2}O_3$-buffered metallic substrates can be used as the buffer for YBCO coated conductor.

• 한국재료학회지
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• 제18권10호
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.