• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1645-1648
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• 2006

We have developed a CMOS LTPS process, which requires only five photolithographic masks and only one ion doping step. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N- and p-channel devices reached field effect mobilities of $173cm^2/Vs$ and $47cm^2/Vs$, respectively.

• Journal of Information Display
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• 제8권1호
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• pp.1-5
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• 2007

We have developed a CMOS LTPS process which requires only five photolithographic masks and only one ion doping step. Drain/Source areas of NMOS TFTs were formed by PECVD deposition of a highly doped precursor layer while PMOS contact areas were defined by ion implantation. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N and p-channel devices reached field effect mobilities of $173cm^2$/Vs and $47cm^2$/Vs, respectively.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.231-236
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• 2005

To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 $\AA$ silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( $N_{d}$, $N_{t}$, $\Phi$$_{b}$, t) which were related with grainboundary.ary.

• ETRI Journal
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• 제37권3호
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• pp.523-532
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• 2015

Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip-chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine-pitch solder bumping has been widely studied. In this study, high-volume solder-on-pad (HV-SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are $28.3{\mu}m$, $31.7{\mu}m$, and $26.3{\mu}m$, respectively. It is expected that the HV-SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine-pitch flip-chip bonding.

• 전기학회논문지
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• 제60권2호
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• pp.362-369
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• 2011

In this paper, optimal deep reactive ion etching (DRIE) process conditions for fused quartz were experimentally determined by Taguchi method, and fused quartz-based micro cantilevers were fabricated. In addition, comparative study on Q-factors of fused quartz and silicon micro cantilevers was performed. Using a silicon layer as an etch mask for fused quartz DRIE process, different 9 flow rate conditions of $C_4F_8$, $O_2$ and He gases were tested and the optimum combination of these factors was estimated. Micro cantilevers based on fused quartz were fabricated from this optimal DRIE condition. Through conventional silicon DRIE process, single-crystalline silicon micro cantilevers whose dimensions were similar to those of quartz cantilevers were also fabricated. Mechanical Q-factors were calculated to compare intrinsic damping properties of those two materials. Resonant frequencies and Q-factors were measured for the cantilevers having fixed widths and thicknesses and different lengths. The Q-factors were in a range of 64,000 - 108,000 for fused quartz cantilevers and 31,000 - 35,000 for silicon cantilevers. The experimental results supported that fused quartz had a good intrinsic damping property compared to that of single crystalline silicon.

• 한국표면공학회지
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• 제29권6호
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• pp.869-875
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• 1996

In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.199-202
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a 5$\times$5$\times$0.09 in. quartz stamp whose critical dimension is 377 nm was fabricated using the etch process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply tile fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer Experiments have shown that the multi-dispensing method can enable UV-NIL rising a large-area stamp.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2257-2259
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• 2000

This paper reports on the design, fabrication and driving experiment of micro mirror array(MMA) for lithography process to apply to biochip fabrication Photolithography technology is applied to activate specific area on the surface of modified glass surface, DNA monomers are bound on the activated area of the glass surface. After repeat of DNA monomer synthesizing process, DNA single strand probes could be solid-synthesized on the glass substrate. Without using photomask, photolithography process is tried using micro mirror array(MMA). Photomask or mask alignment is not required in maskless photolithography process using micro mirror array.

• 한국정밀공학회지
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• 제31권6호
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• pp.483-489
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• 2014

In this study, experiments were conducted for micro pattern printing to combine solution atomization process and stencil printing based on electrospray deposition. The stencil mask fabricated by etching the photosensitive glass placed below 0.3 mm distance to substrate has 100 um line width. The process parameters of electrospray deposition system for the atomization of the solution are applied voltage and supply flow rate of the solution. Meniscus angle of cone-jet was optimized by varying the supply flow rate from 0.3 ml/hr to 0.7 ml/hr. Voltage condition was verified having symmetric cone-jet angle and no pulsation at 8.5 kV applied voltage. In addition, a number of micro patterns are printed using a single 1 step process by solution atomization process. Variable line width of approximate 100 um was confirmed by changing conditions of solution atomization regardless of the pattern size of stencil mask.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 추계학술대회논문집
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• pp.391-394
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• 2003

Laser direct writing process is developed 3rd harmonic Diode Pumped Solid State Laser with the near visible wavelength of 355 m sensitive polymer is irradiated by UV laser and developed using polymer solvent to obtain quasi-3D. It is important to reduce line width for image mode waveguides, so some investigations will be carried out in various conditions of process parameters such as laser power, writing speed, laser focus and optical properties of polymer. This process could be to fabricate a single mode waveguide without expensive mask projection method. Experimentally, the patterns of trapezoidal shape were manufactured into dimension of 8.4 mm width and 7.5 mm height. Propagation loss of straight waveguide measured 3 dB/cm at 1,550 nm.