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The Fabrication of Micro-electrodes to Analyze the Single-grainboundary of ZnO Varistors and the Analysis of Electrical Properties

ZnO 바리스터의 단입계면 분석을 위한 마이크로 전극 제작과 전기적 특성 해석

  • 소순진 ((주)나리지*온) ;
  • 임근영 (원광대학교 공과대학 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 공과대학 전기전자 및 정보공학부)
  • Published : 2005.03.01

Abstract

To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 $\AA$ silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( $N_{d}$, $N_{t}$, $\Phi$$_{b}$, t) which were related with grainboundary.ary.

Keywords

References

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