• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.6
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• pp.423-427
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• 2017

In this paper, an anchor design that improves bonding strength uniformity in the silicon-on-glass (SOG) process is presented. The SOG process is widely used in conjunction with electrode-patterned glass substrates as a standard fabrication process for forming high-aspect-ratio movable silicon microstructures in various types of sensors, including inertial and resonant sensors. In the proposed anchor design, a trench separates the silicon-bonded area and the electrode contact area to prevent irregular bonding caused by the protrusion of the electrode layer beyond the glass surface. This technique can be conveniently adopted to almost all devices fabricated by the SOG process without the necessity of additional processes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.1
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• pp.24-28
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• 2005

A micromachined biochip with a three dimensional silicon chamber was developed for the construction of biosensors. Anisotropic etching was used fur the formation of the chamber on the p-type silicon wafer(100) and then was glued to the Pyrex glass bottom-substrate with pre-deposited platinum electrode. The electrochemical characterization of its Pt electrode and Ag/AgCl reference electrode was investigated.

• Laser Solutions
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• v.9 no.2
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• pp.11-15
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• 2006

We report experimental results on the high-speed micromachining using a femtosecond laser (800 nm, 130 fs, 1kHz) and galvanometer scanner system (Raylase, Germany). Periodic hole drilling of silicon and glass with the scan speed of 1-20 mm/s is demonstrated. Finally, we demonstrate the utility of the femtosecond laser application to ITO patterning by using a high-speed femtosecond laser scanner system.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.481-485
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• 1987

The fabrication of a micro mass flow sensor on a silicon chip by means of micro-machining technology is described on this paper. The operation of micro mass flow sensor is based on the heat transfer from a heated chip to a fluid. The temperature differences on the chip is a measure for the flow velocity in a plane parallel with the chip surface. An anisotropic etching technigue was used for the formation of the V-type groove in this fabrication. The micro mass flow sensor is made up of two main parts ; A thin glass plate embodying the connecting parts and mass flow sensor parts in silicon chip. This sensor have a very small size and a neglible dead space. Micro mass flow sensor can fabricate on silicon chip by micro machining technology too.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.451-454
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• 2001

In this study, a micro-glucose sensor was fabricated by micromachining technology and its sensing characteristics were investigated. The 7740 pyrex glass was used as the bottom substrate and anisotropically etched silicon wafer was used as the top substrate. The size of the fabricated microchip is 1.58${\times}$1.58mm$^2$. It is shown that output current exhibits a linear change according to glucose concentration (100 mM ∼ 300 mM). It is also shown that the response time for glucose was within 240 sec. It was followed by a saturation trend within 50 sec. The g1ucose sensor with Fc$\^$+/ exhibits relatively higher sensitivity than that without Fc$\sub$+/ for output current.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.4 s.247
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• pp.350-357
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• 2006

A new valveless micropump for bi-directional application has been developed and tested. The micropump was fabricated on silicon and glass substrates by micromachining process. The micropump in this study consists of a membrane actuator, a pumping chamber, fluidic channels and two piezoelectric ceramic films. The channels and pumping chamber were etched on a glass wafer and the membrane was made on a silion wafer which is actuated by a piezoelectric ceramic (PZT) film. The geometry of the micropump was optimized by numerical analysis and the performance of the micropump was investigated by the experiments. The maximum flow rate was $323{\mu}L/min$ and the maximum back pressure was 294 Pa when the membrane actuator of $10{\times}10mm^2$ was driven at 130 Hz and 385 V.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.138-143
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• 2010

This paper presents the analysis, the fabrication and the test results of a micro passive gas pressure regulator to keep the outlet pressure costant even for a widely-varying inlet pressure. This device is to regulate the outlet pressure according to the applied reference pressure based on the pressure balancing mechanism of the structure including a membrane and a valve. This regulator consists of four layers; a bulk-micromachined silicon substrate, a sandblasted glass substrate, a PDMS valve seat layer and a glass valve layer. The device size is $10\times13\times1.7 mm3$. The device was fabricated by micromachining. The characteristic of the device was analyzed and tested. The characteristic of the fabricated pressure regulator is similar to that obtained from the analysis. The pressure regulator of this paper is feasible for portable systems and miniature drug delivery systems.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.5
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• pp.1004-1009
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• 2009

Recently, mass spectrometers are widely used for in-situ chemical analysis. It has rapid response and high sensitivity. In this paper, we present the fabrication and test of a cold cathode emitter for micro mass spectrometer using CNTs(Carbon nano tubes). The CNTs have good mechanical, electrical and chemical characteristics. So they have a long life time and strong robustness. The micro mass spectrometer is composed of the glass substrate and the silicon substrate. The glass substrate is constructed by electrodes for TOF(Time-of-flight) which analyze an ion with mass to charge ratio as ion separator. The silicon substrate is highly doped wafer which is patterned for gate electrode and then 100 11m dry etching to grow the CNTs as the electron emitter. The CNTs are grown by HFCVD(Hot filament chemical vapor deposition) with sputtering the catalyst. We successfully attained to grow the CNTs and to test the characteristics.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.