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http://dx.doi.org/10.3795/KSME-B.2017.41.6.423

Improvement of Bonding Strength Uniformity in Silicon-on-glass Process by Anchor Design  

Park, Usung (The 3rd(SR) R&D Institute - 4, Agency for Defense Development (ADD))
An, Jun Eon (The 3rd(SR) R&D Institute - 4, Agency for Defense Development (ADD))
Yoon, Sungjin (The 3rd(SR) R&D Institute - 4, Agency for Defense Development (ADD))
Publication Information
Transactions of the Korean Society of Mechanical Engineers B / v.41, no.6, 2017 , pp. 423-427 More about this Journal
Abstract
In this paper, an anchor design that improves bonding strength uniformity in the silicon-on-glass (SOG) process is presented. The SOG process is widely used in conjunction with electrode-patterned glass substrates as a standard fabrication process for forming high-aspect-ratio movable silicon microstructures in various types of sensors, including inertial and resonant sensors. In the proposed anchor design, a trench separates the silicon-bonded area and the electrode contact area to prevent irregular bonding caused by the protrusion of the electrode layer beyond the glass surface. This technique can be conveniently adopted to almost all devices fabricated by the SOG process without the necessity of additional processes.
Keywords
Bonding Strength Uniformity; Silicon-on-glass Micromachining; Inertial Sensors; Resonant Sensors;
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