• 한국진공학회지
• /
• 제2권3호
• /
• pp.368-373
• /
• 1993

LCVD법에 의한 박막성장장치를 제작하였다. 제작한 CO2 레이저는 CO2 : N2 : He이 1 : 1 : 8로 혼합된 가스를 사용하였으며 최대 출력은 60W였고 혼합가스의 유량이 20l/min, 방전전류 40mAdlfEo 50W의 비교적 안정된 출력을 얻을 수 있었다. 반응실의 기초 진공은 1$\times$10-6torr였으며 레이저를 기판에 수직 혹은 수평으로 조사할 수 있도록 설계하였다. 제작된 장치로 SiH4 및 NH3를 재료로 하여 실리콘 및 quartz 기판위에 silicon nitride 박막을 증착하였다. 박막 생장시 가스를 흘리는 방식보다 가스를 채워놓고 하는 방식이 낮은 레이저 출력하에서 균일한 박막을 얻는데 효율적이라는 것을 발견하였다. 출력 55W의 레이저를 실리콘 기판에 5분간 조사하였을 때 최대 두께1.5$mu extrm{m}$의 박막을 얻었으며 quartz 기판위에는 출력 4W, 조사시간 6분에서 두께가 약 1$\mu\textrm{m}$인 비교적 균질의 박막을 얻을 수 있었다. FT-IR 및 XPS 분석 결과 SiH4와 NH3의 혼합비가 1 : 12일 때 비교적 nitride화가 잘 된 박막이 얻어졌음을 알았다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.573-576
• /
• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• 전기학회논문지
• /
• 제56권8호
• /
• pp.1455-1460
• /
• 2007

This paper reports the piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film deposited onto Mo/Ti electrode. This successful achievement, compared to the previous results, is followed by manipulating two material properties: the one is to use a compressively stressed silicon nitride film as a supporting diaphragm (even tensile stressed, around +20 MPa) and the another is to use high quality AlN thin film with compressive residual stress (less than -100 MPa). With these materials, the Sound Pressure Level (SPL) of the fabricated micro speakers shows more than 60 dB from 100 Hz to 15 kHz and the highest SPL is about 100 dB at 9.3 kHz with 20 Vpeak-to-peak sinusoidal input and with 10 mm distances from the fabricated micro speakers to the reference microphone (B&K Type 2669 & 4192L).

• 한국자기학회지
• /
• 제18권1호
• /
• pp.32-35
• /
• 2008

차세대 반도체 산업의 발전을 위하여 반도체 소자의 구조는 DRAM, FRAM, MRAM 등 여러 분야에서 다양한 연구가 진행되고 있다. 특히 이런 차세대 반도체 소자에서 금속 배선으로는 Cu가 사용되며, Cu 금속 배선을 위한 확산방지막에 대한 연구는 반드시 필요하다[1-3]. Cu 금속 배선을 위한 확산방지막에 대한 현재까지의 연구에서는 Tungsten(W)을 기반으로 Nitride(N)를 불순물로 첨가한 확산방지막에 대하여 연구되었다[4-7]. 이러한 W-N를 기반으로 본 연구에서는 물리적 기상 증착법(PVD) 방법인 RF Magnetron Sputter 방법으로 W-N 이외에 Carbon(C) 과 Boron(B)을 첨가하여 확산방지막의 특성을 확인하였고, 특히 Boron Target의 power를 변화하여 W-B-C-N 확산방지막의 Boron에 의한 특성과 열적 안정성을 연구하였다[8-10]. 실험은 다양한 Boron의 조성을 가지는 확산방지막을 증착하여 $\beta$-ray와 4-point probe를 사용하여 확산방지막의 특성을 확인하였고, 고온($700^{\circ}C{\sim}1000^{\circ}C$) 열처리한 후 X-ray Diffraction 분석을 하여 열적 안정성을 확인하였다.

• 전자공학회논문지A
• /
• 제30A권1호
• /
• pp.44-50
• /
• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• 센서학회지
• /
• 제14권5호
• /
• pp.343-349
• /
• 2005

Carbon nitride films were deposited on various substrates for humidity sensors with meshed electrode by reactive RF magnetron sputtering system. As the ratio of injected nitrogen was decreased, the sensitivity of sensor was increased. When the ratio of injected nitrogen was $50{\sim}70%$, the sample showed the best linearity. The sensor impedance changed from $95.4{\;}k{\Omega}$ to $2.1{\;}k{\Omega}$ in a relative humidity range of 5 % to 95 %. The humidity sensors based on silicon wafer revealed higher lineality and faster response than those of alumina or quartz substrates. The adsorption saturation time of the sample was about 80 sec, and its desorption time was about 90 sec.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.327.1-327.1
• /
• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• 대한전자공학회논문지
• /
• 제26권3호
• /
• pp.130-136
• /
• 1989

보론이 도우핑된 수소화된 비정질 실리콘을 이용한 박막 트랜지스터를 플라즈마 CVD 방법으로 제작하여 트랜지스터의 특성 및 준안정성에 관한 연구를 수행하였다. 보론이 도우핑된 비정질 실리콘 ambipolar 트랜지스터를 열평형 온도 이상에서 급냉하면, active dopants가 증가하고 경계면 상태밀도가 감소하여 정공채널에 의한 드레인 전류가 증가하고 전자채널의 드레인 전류는 급냉 온도에 따라 증가하다 감소되는 현상을 측정하였다. 이런 급냉 효과는 실리콘내에 있는 수소의 운동과 밀접한 관계가 있고 active dopants, 댕글링 본드 및 경계면 상태밀도의 변화로 해석된다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.1051-1054
• /
• 2009

This paper investigates approaches for improving effective mobility of organic thin film transistors (OTFTs). We consider gate dielectric optimization, whereby we demonstrated >2x increase in mobility by using a silicon-rich silicon nitride ($SiN_x$) gate dielectric for polythiophene-based (PQT) OTFTs. We also engineer the dielectric-semiconductor ($SiN_x$-PQT) interface to attain a 27x increase in mobility (up to 0.22 $cm^2$/V-s) using an optimized combination of oxygen plasma and OTS SAM treatments. Augmentative material systems by combining 1-D nanomaterials (e.g., carbon nanotubes, zinc oxide nanowires) in an organic matrix for nanocomposite OTFTs provided a further boost in device performance.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.566-567
• /
• 2009

We have examined the silicon nitride ($SiN_x$) as gate insulator with the ammonia ($NH_3$) plamsa treatment for the soluble derivatives of polythiophene as p-type channel materials of organic thin film transistors (OTFTs). Fabrications of the jetting-processed OTFTs with $SiN_x$ as gate insulator by $NH_3$ plasma treatment can be similar to performance of OTFTs with silicon dioxide ($SiO_2$) insulator.