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Piezoelectric Microspeakers Fabricated with High Quality AlN Thin Film  

Yi, Seung-Hwan (충주대학교 공대 기계공학과/친환경 에너지 부품소재센터)
Jung, Kyung-Sick (충주대학교 공대 대학원 기계공학과)
Kim, Dong-Kee (대진전자(주) 연구소)
Shin, Gwang-Jae ((주)엠에스솔루션 연구소)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.56, no.8, 2007 , pp. 1455-1460 More about this Journal
Abstract
This paper reports the piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film deposited onto Mo/Ti electrode. This successful achievement, compared to the previous results, is followed by manipulating two material properties: the one is to use a compressively stressed silicon nitride film as a supporting diaphragm (even tensile stressed, around +20 MPa) and the another is to use high quality AlN thin film with compressive residual stress (less than -100 MPa). With these materials, the Sound Pressure Level (SPL) of the fabricated micro speakers shows more than 60 dB from 100 Hz to 15 kHz and the highest SPL is about 100 dB at 9.3 kHz with 20 Vpeak-to-peak sinusoidal input and with 10 mm distances from the fabricated micro speakers to the reference microphone (B&K Type 2669 & 4192L).
Keywords
Piezoelectric Microspeaker; AlN Film; Sound Pressure Level; Residual Stress;
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