• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2003년도 학술대회지
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• pp.78-84
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• 2003

Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a $B_4C$ target with As as processing gas. Various amounts of methane gas $(CH_4)$ were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that $CH_4$ addition to As processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of $CH_4$, gas component from 0 to $1.2\;vol\;\%$. By adding a sufficient amount of $CH_4\;(1.2\%)$ in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.299-299
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• 2011

A dipolar interlayer can cause dramatic changes in the device characteristics of organic field-effect transistors (OFETs) or photovoltaics. A shift in the threshold voltage, for example, has been observed in an OFET where the organic semiconductor active layer is deposited on SiO2 modified with a dipolar monolayer. Dipolar molecules can similarly be used to change the current-voltage characteristics of organic-inorganic heterojunctions. We have conducted a series of experiments in which different molecular linkages are placed between a pentacene thin film and a silicon substrate. Interface modifications with different linkages allow us to predict and examine the nature of tunneling through pentacene on modified Si surfaces with different dipole moment. The molecular-scale structure and the tunneling properties of pentacene thin films on modified Si (001) with nitrobenzene and styrene were examined using scanning tunneling spectroscopy. Electronic interfaces using organic surface dipoles can be used to control the band lineups of a semiconductor at organic/inorganic interfaces. Our results can provide insights into the charge transport characteristics of organic thin films at electronic interfaces.

• 한국세라믹학회지
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• 제55권4호
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• pp.392-399
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• 2018

$C_f/SiC$ composites were prepared via a process combining chemical vapor infiltration (CVI) and precursor infiltration pyrolysis (PIP), wherein silicon carbide matrices were infiltrated into 2.5D carbon preforms. The obtained composites exhibited porosities of 20 vol % and achieved strengths of 244 MPa in air at room temperature and 423 MPa at $1300^{\circ}C$ under an Ar atmosphere. Carbon fiber pull-out was rarely observed in the fractured surfaces, although intermediate layers of pyrolytic carbon of 150 nm thickness were deposited between the fiber and matrix. Fatigue fracture was observed after 1380 cycles under 45 MPa stress at $1000^{\circ}C$. The fractured samples were analyzed by transmission electron microscopy to observe the distributed phases.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3579-3582
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• 2010

We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom’s lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.131-136
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• 2000

We have investigated the slurry induced metallic contaminations of undoped and doped silicate oxides surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-orthyo-silicate glass(PE-TEOS), O3 boro-phos-pho-silicate glass(O3-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing which is due to a CMP slurry. The polished O3-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents. In addition, the polishing removal rate of PSG oxides had a linear relationship as a function of phosphorus contents.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1274-1276
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• 1993

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.62-65
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• 2005

We studied the nematic liquid crystal (NLC) alignment capability by the Ultraviolet (UV) alignment method on a-C:H thin-films, and investigated electro-optical performances of the UV aligned twisted nematic (TN)-liquid crystal display (LCD) with the UV exposure on a-C:H thin film surface. A good LC alignment by UV irradiation on a-C:H thin-film surfaces was achieved. Monodomain alignment of the UV aligned TN-LCD can be observed. The good electro-optical (EO) characteristics of the UV aligned TN-LCD was observed with oblique UV exposure on the a-C:H thin film surface for 1min.

• 한국표면공학회지
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• 제48권5호
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• pp.245-252
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• 2015

In recent years, the cleaning and activation technology of surfaces using atmospheric plasma as well as the deposition technology for coating using atmospheric plasma have been demonstrated conclusively and drawn increasing industrial attention. Especially, due to the simplicity, the technology using atmospheric plasma enhanced chemical vapor deposition has been widely studied from many researchers. The plasma source type commonly used as the stabilization of diffuse glow discharges for atmospheric pressure plasma enhanced chemical vapor deposition pressure is the dielectric barrier discharge. In this review paper, some kinds of modified dielectric barrier discharge type will be presented. And, the characteristics of silicon based compound such as SiOx and SiNx deposited using atmospheric plasma enhanced chemical vapor system will be discussed.

• 한국결정성장학회지
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• 제8권4호
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• pp.645-650
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• 1998

계면유도 침전법을 이용, 알루미나와 이트리아를 코팅한 SiC 분말을 사용하여 제조된 탄화규소의 물성을 관찰하였다. $Al_2(SO_4)_3$과 $Y_2(SO_4)_3$의 수용액에서 요소를 분해시켜 수화물 및 탄화물의 전구체로 구성된 석출물을 SiC의 분말 표면에 코팅한 후 하소하여 알루미나와 이트리아가 코팅된 탄화규소 시편을 제조하였다. $1900^{\circ}C$에서 소결한 탄화규소는 약 97.8%의 소결밀도를 나타내었으며, 소결 후 annealing을 행한 시편은 $\beta$상 탄화규소에서 $\alpha$상 탄화규소로의 상전이가 일어나 주상입자가 형성되었다. 균열 전파시 주상입자를 중심으로 입계간 균열(intergranular crack)이 일어났으며, 주상입자의 pullout 효과 의한 균열길이의 증가로 SiC 소결체의 인성이 증진되는 것으로 나타났다. annealing 시간이 3시간 이내인 경우에는 소결조제의 첨가량이 적은 시편의 파괴인성치가 높았으나 그 차이는 미미하였고, annealing 시간이 길어짐에 따라 소결조제의 양에 따른 인성의 차이는 거의 나타나지 않았다. 이러한 결과는 annealing 시간이 길어짐에 따라 입자의 정단축비(aspect ratio)가 커지고 주성입자에 의한 pullout 효과가 인성증진의 주된 인자가 되어, 소결조제의 양과 관련된 영향이 적었기 때문인 것으로 사료되었다.

• 한국산학기술학회논문지
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• 제11권6호
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• pp.1943-1948
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• 2010

평균 입도의 크기가 ${\sim}1.7\;{\mu}m$와 ${\sim}30\;nm$인 두 종류의 탄화규소 분말을 7 wt% $Y_2O_3$, 2 wt% $Al_2O_3$, 1 wt% MgO를 소결 첨가제로 사용하여 $1800^{\circ}C$에서 1 시간동안 Ar 분위기에서 압력을 가하여 고온가압소결을 하였다. 고온 가압소결한 시편은 $1950^{\circ}C$에서 6 시간동안 Ar 분위기에서 40 MPa의 압력을 가하여 고온 단조 하였다. 두 시편 모두 고온가압소결 후의 미세구조는 등방형 모양의 결정립을 나타내었으며, 고온 단조 후에 결정립 성장이 나타났다. 평균 입도의 크기가 작은 탄화규소 분말로 소결한 시편의 결정립의 크기가 고온 단조 후에도 더 작은 결정립을 나타내었다. 고온 단조 후의 압력축과 평행한 방향과 수직한 방향의 미세구조는 비슷하였다. 탄화규소의 $\beta$에서 $\alpha$로의 상변태가 활발하게 발생하지 않아 집합조직의 발달은 발견되지 않았다. 평균 입도의 크기가 큰 탄화규소 분말로 제작된 시편의 파괴인성 (${\sim}3.9\;MPa{\cdot}m^{1/2}$), 경도 (~ 25.2 GPa), 굽힘강도가 (480 MPa) 평균 입도의 크기가 작은 탄화규소로 제작된 시편보다 높게 나타났다.