• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.39-43
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• 2017

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from $6.83{\times}10^{18}cm^{-3}$ to $1.27{\times}10^{19}cm^{-3}$ and from 62 to $89cm^2/V{\cdot}s$, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.828-831
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• 2001

A simple and versatile method of manufacturing semiconductor devices with pn-junctions used the silicon direct bonding technology with simultaneous impurity diffusion is suggested . Formation of p- or n- type layers was tried during the bonding procedure by attaching two wafers in the aqueous solutions of Al(NO$_3$)$_3$, Ga(NO$_3$)$_3$, HBO$_3$, or H$_3$PO$_4$. An essential improvement of bonding interface structural quality was detected and a model for the explanation is suggested. Diode, Dynistor, and BGGTO structures were fabricated and examined. Their switching characteristics are presented.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.208-212
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• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.109-112
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• 2007

In this paper we describe a robust method of improving precision in monitoring high energy ion implantation processes. Ion implant energy accuracy was measured in the device manufacturing process using an unpatterned implanted layer on an intrinsic p-type silicon wafer. To increase Rs sensitivity to energy at the well implant process, a PN junction structure was formed by P-well and deep N-well implants into the p-type Si wafer. It was observed that the depletion layer formed by the PN junction was very sensitive to energy variation of the well implant. Conclusively, it can be recommended to monitor well implant processes using the Rs measurement method described herein, i.e., a PN junction diode structure since it shows excellent Rs sensitivity to variation caused by energy difference at the well implant step.

• 반도체디스플레이기술학회지
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• 제23권3호
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• pp.29-34
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• 2024

We investigated the n-type δ-doping activation of the tunneling junctions of Si nanolayers for silicon tandem cell applications. The thin film growth of pn junction with the inclusion of phosphorus monolayer was performed by plasma-enhanced chemical vapor deposition with the implement on 6-inch wafers of p-Si microtextured substrates. The rapid thermal annealing processes with various temperatures were performed to activate the δ-doped layer. The activation was confirmed by the electron spin resonance with Lande factor g=2.006085 for the delocalized conduction electron from the phosphorus δ-doped layer at the magnetic field of 3357.5 Gauss. The tunneling junction shows the Ohmic character at the low voltage and the Schottky character at the high voltage bias.

• 센서학회지
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• 제9권4호
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• pp.274-280
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• 2000

본 논문은 감마선 방사선 선량을 측정하기 위하여 상용 반도체를 응용하기 위한 실험적 연구에 대하여 다루었다. 실리콘 포토 다이오드는 값이 싸고 작으며 높은 효율과 견고하여 광검출기로 잘 이용되기 때문에 감마선과 같은 방사선 측정에 효과적으로 이용될 수 있다. 대부분의 PN 포토 다이오드는 이 증가함에 따라 역 방향 전류의 증가하는 특성을 가지고 있다. 그러므로 이 소자들의 공핍층이 역 방향 전류에 영향을 주므로 이 공핍층의 면적이 큰 PIN 포토 다이오드를 선택하였다. 이 연구에서는 방사선량을 검출하고 감마선 선량계를 개발하는데 적용하기 위하여, PIN 다이오드에 대해 몇 가지 실험이 수행되었다. NEC사의 PH 302와 SIEMENS사의 BPW 34와 같은 2가지 종류의 포토 다이오드를 반도체 분석장치를 사용하여 $\gamma$선 방사선원인 Co-60의 저준위 시설에서 시험하였다. 그 결과, 방사선 선량률과 다이오드의 전류 사이에 양호한 선형적 함수 관계가 나타나는 것을 확인할 수 있었다. 따라서, 이들 실리콘 PIN 포토 다이오드들은 $\gamma$선 선량계를 설계하는데 적합하게 이용될 수 있을 것이다.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.367-371
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• 2018

1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, $R_{on}$, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.241-245
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• 2022

In this study, we measured and comparatively analyzed the characteristics of MPS (Merged Pin Schottky) diodes in 4H-SiC by changing the areal ratio between the Schottky and PN junction region. Increasing the temperature from 298 K to 473 K resulted in the threshold voltage shifting from 0.8 V to 0.5 V. A wider Schottky region indicates a lower on-resistance and a faster turn-on. The effective barrier height was smaller for a wider Schottky region. Additionally, the depletion layer became smaller under the influence of the reduced effective barrier height. The wider Schottky region resulted in the ideality factor being reduced from 1.37 to 1.01, which is closer to an ideal device. The leakage saturation current increased with the widening Schottky region, resulting in a 1.38 times to 2.09 times larger leakage current.