• Journal of Integrative Natural Science
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• v.5 no.1
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• pp.27-31
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• 2012

Relationship between reflection resonance and applied current density in Bragg photonic crystal has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.40-45
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• 1990

Optical pulse compression in a high finesse nonlinear Fahry-Perot interferometer made hy a silicon is ohserved. The optical pulse compression and moclul,ltion in a such nonlinear Fabry-Perot interferometer is due to the refractive index change of the silicon hy absorbing the incicknt pulse and generating electron-hole pairs. The pulse is compressed to liS of width of the IIlcicient pulse. And the experimental results are consistent with the results of computer simulation.lation.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.1-3
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• 2011

We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and $P^+$/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the $P^+$/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation.

• Current Optics and Photonics
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• v.6 no.1
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• pp.15-22
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• 2022

This paper describes the construction of a phase shifter with low loss and small volume. To construct it, we use the two graphene layers that are separated by a hexagonal boron nitride (hBN) and embedded in a silicon waveguide. The refractive index of the waveguide is adjusted by applying a bias voltage to the graphene sheet to create an optical phase shift. This waveguide is a compact device that only has a radius of 5 ㎛. It has a phase shift of 6π. In addition, the extinction ratio (ER) is 11.6 dB and the insertion loss (IL) is 0.031 dB. Due to its unique characteristics, this device has great potential in silicon on-chip optical interconnection and all-optical multiple-input multiple-output processing.

• Current Optics and Photonics
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• v.7 no.2
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• pp.200-206
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• 2023

Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.353-357
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• 2010

Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.2
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• pp.28-34
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• 2011

In previous reports, we investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide ($SiO_2$) surface by using only a photolithographic process. In this paper, we have fabricated field effect transistors (FETs) with SWCNT channels by using the technique mentioned above. Also, we have electrically measured gating effects of these FETs under different source-drain voltages ($V_{SD}$). These FETs have been fabricated for sensor applications. Photoresist (PR) patterns have been made on a $SiO_2$-grown silicon (Si) substrate by using a photolithographic process. This PR-patterned substrate have been dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). These PR patterns have been removed by using aceton. As a result, a selectively-assembled SWCNT channels in FET arrays have been obtained between source and drain electrodes. Finally, we have successfully fabricated 4 FET arrays based on SWCNT-channels by using our simple self-assembly technique.

• Korean Journal of Optics and Photonics
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• v.30 no.2
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• pp.59-66
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• 2019

We report highly sensitive detection of myocardial infarction biomarkers, such as myoglobin and cTnI, within several hundred seconds using a rotating-analyzer ellipsometer and a biosensor with biochips fabricated on a $SiO_2$-coated tilted silicon substrate. We choose the running buffer to be pure phosphate-buffered saline (PBS) or 10% mixed human serum. When we choose the running buffer to be pure PBS, we obtain diagnostic densities of pure myocardial infarction biomarkers of up to 1 ng/ml and 5 pg/ml respectively. Meanwhile, when we use PBS with 10% human serum, the measured densities of myoglobin and cTnI were up to 1 ng/mL and 1 pg/mL respectively. The measured diagnostic densities are less than 1/15 and 1/80 (in cases of myoglobin and cTnI respectively) of those referenced by the World Health Organization.

• Korean Journal of Optics and Photonics
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• v.34 no.6
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• pp.235-240
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• 2023

The optical signal injected into an end-fire optical phased array propagates along the waveguides inside the device and is emitted from the edge of the antenna. In general, reflection and scattering occur at the boundary, thereby reducing the emission efficiency of the optical signal. In this article, we propose a silicon nitride (Si₃N₄) tapered waveguide antenna structure whose width is tapered toward the emitting edge, achieving high emission efficiency operating at the 1,550 nm wavelength. The Si₃N₄ tapered waveguide antenna was numerically designed using the 3D finite-difference time-domain method. The optical signal emission efficiency increased from 78% to 96.3%, while reflectance decreased from 22% to 3.7% compared with the untapered waveguide antenna counterpart. This result will not only boost the optical signal intensity but also mitigate optical noise resulting from back reflection along the waveguide in the end-fire optical phased array device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.817-821
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• 2011

We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.