• Structural Engineering and Mechanics
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• v.67 no.3
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• pp.311-316
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• 2018

Vibration of concrete beams reinforced by agglomerated silicon dioxide ($SiO_2$) nanoparticles is studied based on numerical methods. The structure is simulated by Euler-Bernoulli beam model and the Mori-Tanaka model is used for obtaining the effective material properties of the structure. The concrete beam is located in soil medium which is modeled by spring elements. The motion equations are derived based on energy method and Hamilton's principle. Based on exact solution, the frequency of the structure is calculated. The effects of different parameters such as volume percent of $SiO_2$ nanoparticles and agglomeration, soil medium and geometrical parameters of beam are shown on the frequency of system. The results show that with increasing the volume percent of $SiO_2$ nanoparticles, the frequency increases.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.45-50
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• 2022

The etching with high selectivity of silicon dioxide over silicon nitride is essential in semiconductor fabrication, and gas phase etch (GPE) can increase the competitiveness of the selective dielectric etch. In this work, GPE of plasma enhanced chemical vapor deposited SiO₂ was performed, and the effects of process parameters, such as temperature, partial pressure ratio, and gas supply cycle, are investigated in terms of etch rate and within wafer uniformity. Employing multiple regression analysis, the importance of each parameter elements is analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.134-135
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• 2008

Ultra-thin $SiO_2/ZrO_2$ dielectrics were deposited by atomic layer chemical vapor deposition (ALCVD) method for non-volatile memory application. Metal-oxide-semiconductor (MOS) capacitors were fabricated by stacking ultra-thin $SiO_2$ and $ZrO_2$ dielectrics. It is found that the tunneling current through the stacked dielectric at the high voltage is lager than that through the conventional silicon oxide barrier. On the other hand, the tunneling leakage current at low voltages is suppressed. Therefore, the use of ultra-thin $SiO_2/ZrO_2$ dielectrics as a tunneling barrier is promising for the future high integrated non-volatile memory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.10
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• pp.9-12
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• 2016

The process parameters of DC pulsed sputtering to produce a multi-layer thin film with light reflectance at a specific wavelength region were studied. The optical simulation of multi-layer thin films of the silicon dioxide ($SiO_2$) films with a low refractive index and the titanium dioxide ($TiO_2$) films with a high refractive index was done. Under a DC pulsed sputtering power of 2kW and 200 sccm(standard cubic centimeter per minute) argon gas, the silicon dioxide films with a refractive index of 1.46 in the range of oxygen gas ratios of 12% and a titanium dioxide film with a refractive index of 2.27 in the range of oxygen gas ratios of 1% were produced. The multi-layer structure of high refractive index/low refractive index/high refractive index was designed and fabricated. The characteristics of the fabricated multi-layer thin film structure showed a reflectance of more than 45% in the range, 780 to 1200nm. This multi-layer structure is expected to be used to block the near infrared wavelength light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.194-197
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• 2002

Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO$_2$) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$. The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2020.11a
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• pp.42-43
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• 2020

Lauric acid (LA) which is also known as dodecanoic acid has been selected as the phase change material (PCM) owing to eco-friendly in nature. A systematic study has been conducted for encapsulation of LA (core) with silicon dioxide (SiO2) as shell material. Different core-shell ratio was chosen to microencapsulate the LA with 10 ml of tetraethyl orthosilicate (TEOS) as the precursor solution for the formation of SiO2. The synthesis of microencapsulated LA was carried out at 2.5 pH of precursor solution. The synthesized microencapsulated LA are characterized by Fourier transform infrared spectroscope (FT-IR) and X-Ray Diffraction (XRD) which confirmed the presence of SiO2 shell on the surface of LA.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.447-447
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• 2010

일찍이 $SiO_2$ (Silicon dioxide) 박막은 다양한 분야에서 유전층, 부식 방지층, passivation층 등의 역할을 해왔다. 그리고 이러한 박막 공정은 대부분 진공의 환경에서 그 공정이 이루어지고 있다. 하지만 이러한 진공 system은 chamber, loadlock 그리고 펌프 등의 다양한 진공장비로 인한 생산 비용 증가, 공정의 복잡성뿐만 아니라 공정의 대면적화에 어려움을 지니고 있다. 그리고 최근 flexible display의 제조 공정에서 polymer 혹은 plastic 기판을 제조 공정에 적용시키기 위해 저온 공정이 필수적으로 요구 되고 있다. 이러한 기술적 한계를 뛰어 넘기 위해 최근 많은 연구가들은 atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD)에 대해 지속적으로 다양한 연구를 하고 있다. 본 연구에서는 remote-type의 modified pin-to-plate dielectric barrier discharge (DBD) 시스템을 이용한 $SiO_2$ 무기 박막 증착에 관해 연구하였다. $O_2$/He/Ar의 gas와 5 kV AC power (30 kHz)의 전원장치를 통해 고밀도 대기압 플라즈마를 발생시켰고, silicon precursor로는 hexamethyldisilazane (HMSD)를 사용하였다. 먼저 HMDS와 $O_2$ gas의 flow rate 변화에 따른 증착률을 조사하였고 그 다음으로 박막의 조성 및 표면 특성을 조사하였다. HMDS의 유량이 100 ~ 300 sccm으로 증가함에 따라 증착속도는 증가했다. 하지만 FT-IR을 통해 HMDS의 유량이 증가하면 반응에 참여할 산소 분자의 부족으로 인해 $-(CH_3)_X$의 peak intensity가 증가하고, -OH의 peak intensity가 점차 감소함을 관찰 할 수 있었다. 또한 증착된 박막의 표면에 particle과 불균일한 surface morphology 등을 SEM image를 통해 관찰 하였다. 산소 유량이 탄소와 관련된 많은 불순물들의 제거에 도움이 됨에도 불구하고 14 slm 이상의 산소가 반응기 내로 주입되게 되면 대기압 플라즈마의 discharge가 불안정하게 되어 공정효율을 저하시키는 요소가 되었다. 결과적으로 HMDS (150 sccm)/$O_2$ (14 slm)/He (5 slm)/Ar (3 slm)의 조건에서 약 42.7 nm/min 증착률을 가지며, 불순물이 적고 surface morphology가 깨끗한 $SiO_2$ 박막을 증착할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1284-1287
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• 2007

Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

• Computers and Concrete
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• v.20 no.2
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• pp.119-127
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• 2017

Time-dependent buckling of embedded straight concrete columns armed with Silicon dioxide($SiO_2$) nano-particles exposed to fire is investigated in the present study for the fire time. The column is simulated mathematically with Timoshenko beam model. The governing mass conservation equations to describe heat and moisture transport in concrete containing free water, water vapor, and dry air in conjunction with the conversion of energy are considered. The characteristics of the equivalent composite are determined using Mori-Tanaka approach. The foundation around the column is simulated with spring and shear layer. Employing nonlinear strains-displacements, energy methods and Hamilton's principal, the governing equations are derived. Differential quadrature method (DQM) is used in order to obtain the critical buckling load and critical buckling time of structure. The influences of volume percent of $SiO_2nano-particles$, geometrical parameters, elastic foundation and concrete porosity are investigated on the time-dependent buckling behaviours of structure. Numerical results indicate that reinforcing the concrete column with $SiO_2nano-particles$, the structure becomes stiffer and the critical buckling load and time increase.