Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Characterization of Gas Phase Etching Process of SiO2 with HF/NH3

  • Kim, Donghee (Department of Electronic Engineering, Myoungji University) ;
  • Park, Heejun (Department of Industrial and Management Engineering, Myoungji University) ;
  • Park, Sohyeon (Department of Electronic Engineering, Myoungji University) ;
  • Lee, Siwon (Department of Electronic Engineering, Myoungji University) ;
  • Kim, Yejin (Department of Industrial and Management Engineering, Myoungji University) ;
  • Hong, Sang Jeen (Department of Electronic Engineering, Myoungji University)
  • Received : 2022.05.26
  • Accepted : 2022.06.22
  • Published : 2022.06.30
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Abstract

The etching with high selectivity of silicon dioxide over silicon nitride is essential in semiconductor fabrication, and gas phase etch (GPE) can increase the competitiveness of the selective dielectric etch. In this work, GPE of plasma enhanced chemical vapor deposited SiO2 was performed, and the effects of process parameters, such as temperature, partial pressure ratio, and gas supply cycle, are investigated in terms of etch rate and within wafer uniformity. Employing multiple regression analysis, the importance of each parameter elements is analyzed.

Keywords

Acknowledgement

This work was supported by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE). (P0008458, The Competency Development Program for Industry Specialist.)

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