• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.112-116
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• 2000

This paper presents anisotropic ethcing characteristics of single-crystal silicon in tetramethylammonium hydroxide(TMAH):isopropyl alcohol(IPA) solutions containing pyrazine. With the addition of IPA to TMAH solutions, etching characteristics are exhibited that indicate an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of $0.8\;{\mu}m/min$, which is faster by 13 % than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH:0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased if more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front were not observed and the undercutting ratio was reduced by 30 ~ 50 %.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.21-25
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• 2001

This paper presents the effect of pyrazine on tetramethylammonium hydroxide (TMAH):isopropyl alcohol (IPA) single-crystal silicon anisotropic etching properties. With the addition of IPA to TMAH solutions, etching characteristics are exhibited an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of 0.8 ${\mu}{\textrm}{m}$/min, which is faster by 13% than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH: 0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased when more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front are not observed and the undercutting ratio is reduced by 30~50%. These results indicate that anisotropic etching technology using TMAH:IPA:pyrazine solutions provides a powerful and versatile method for realizing of microelectromechanical systems.

• Ceramist
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• v.23 no.2
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• pp.178-183
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• 2020

Solar energy conversion is now actively researching because of pollution. Especially silicon photocatalyst has big potential, because of wide absorption range. But low quantum yield of silicon photocatalyst can't be used for commercialization. This paper summarize mechanism of silicon photocatalyst. In addition, properties and current states of photo catalyst using nanomaterials of silicon are also introduced.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1417-1423
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• 1995

α/β sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the α to β phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phse transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si3N4 whisker and rim being β-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300℃ to be about 130 MPa lower than that measured at RT for the whisker reinforced composites.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.470-480
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• 2016

The reversal of a silicon chip to find out its security structure is common and possible at the present time. Thanks to reversing, it is possible to use a probing attack to obtain useful information such as personal information or a cryptographic key. For this reason, security-related blocks such as DES (Data Encryption Standard), AES (Advanced Encryption Standard), and RSA (Rivest Shamir Adleman) engines should be located in the lower layer of the chip to guard against a probing attack; in this regard, the addition of a silicon-surface-protection layer onto the chip surface is a crucial protective measure. But, for manufacturers, the implementation of an additional silicon layer is burdensome, because the addition of just one layer to a chip significantly increases the overall production cost; furthermore, the chip size is increased due to the bulk of the secure logic part and routing area of the silicon protection layer. To resolve this issue, this paper proposes a practical silicon-surface-protection method using a metal layer that increases the security level of the chip while minimizing its size and cost. The proposed method uses a shift register for the alternation and variation of the metal-layer data, and the inter-connection area is removed to minimize the size and cost of the chip in a more extensive manner than related methods.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.561-569
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• 1988

Mixtures of very small amounts of additive, carbon and silica(about 0.46${\mu}{\textrm}{m}$) which synthesized by the hydrolysis of ethyl silicate, the molar ratio of SiO2/C was fixed to 1/10, was nitrided at 145$0^{\circ}C$. It was considered that the optimum amount of additive to promote the nitridation reaction was below 2.0wt%. By the addition of additive, the nitridation reaction was promoted and formation of $\beta$-Si3N4 was promoted at 145$0^{\circ}C$ for 1hour, but, the nitridation reaction was decreased and the ratio of $\alpha$/$\beta$ of Si3N4, was increased at 145$0^{\circ}C$ for 5 hours. The crystal phase was $\alpha$ phase and the nitridation reaction was promoted and the particle size of silicon nitride was become smaller by the addition of $\alpha$-Si3N4, but silicon nitride of whisker-like form was produced by the addition of transition elements. There was a difference in the lattice constants of $\alpha$-Si3N4, but no difference in its of $\beta$-Si3N4 according to kinds of added substance and reaction time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.137-139
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• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.293-297
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• 2009

In this paper, we made three kinds of porous silicon samples (single layer, distributed Bragg reflector, and microcavity) by electrochemical etching p-type silicon substrate. And then, we investigated their reflectance spectrum properties. We found that the number of fringe patterns and the maximum reflectivity of porous silicon multilayer increased compared with a porous silicon sinlge layer. In addition, we can observe that the DBR (distributed Bragg reflector) porous silicon has a full-width at half-maximum about 33 nm which is narrower than the porous silicon single layer and porous silicon microcavity.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.816-823
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• 1996

Chlorine containing high density plasmas are widely used to etch various materials in the microelectronic device fabrication. In this study, the characteristics of inductively coupled $Cl_2(O_2/N_2$) plasmas and their effects on the formation of silicon etching have been investigated using a Langmuir probe, quadrupole mass spectrometry(QMS), X-ray photoelectron spectroscopy(XPS), and Scanning Electron Microscopy(SEM). The addition of oxygen for chlorine plasmas reduced ion current densities and chlorine radical densities compared to the nitrogen addition by the recombination of oxygen with chlorine. Also, when silicon is etched in $Cl_2/O_2$ plasmas, etch products recombined with oxygen such as $SiCl_xO_y$ emerged. However, when nitrogen is added to chlorine, etch products recombined with nitrogen or Si-N bondings on the etched silicon surface were not found. All the silicon etch characteristics were dependent on the plasma conditions such as ion density, radical density, etc. As a result sub micron vertical silicon trench etch profiles could be effectively formed using optimized etch conditions for $Cl_2/O_2\; and \;Cl_2/N_2$ gas combinations.