• 센서학회지
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• 제20권3호
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• pp.213-218
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• 2011

The load cell is a force sensor and a transducer that is used to convert a physical force into a electrical signal for weighing equipment. Most conventional load cells are widely used a metal foil strain gauge for sensing element when force being applied spring element in order to converts the deformation to electrical signals. The sensitivity of a load cell is limited by its low gauge factor, hysteresis and creep. But silicon-based sensors perform with higher reliability. This paper presents the basic design and development of the silicon type load cell with an SUS630 diaphragm. The load cell consists of two parts the silicon strain gauge and the SUS630 structure with diaphragm. Structure analysis of load cell was researched by theory to optimize the load cell diaphragm design and to determine the position of peizoresistors on a silicon strain gauge. The piezo-resistors are integrated in the four points of silicon strain gauge processed by ion implantation. The thickness of the silicon strain gauge was polished by CMP under 100 ${\mu}M$. The 10 mm diameter SUS630 diaphragm was designed for loads up to 10 kg with 300 ${\mu}M$ of diaphragm thickness. The load cell was successfully tested, the variation of ${\Delta}$R(%) of four points on the silicon strain gauge is good linearity properties and sensitivity.

• 센서학회지
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• 제22권5호
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• pp.321-326
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• 2013

In this paper, the usability of a compact silicon strain gauge load cell in a weighting disdrometer for measuring the impact load of a falling raindrop is introduced for application in a multi-meteorological sensor. The silicon strain gauge load cell is based on the piezoresistive effect, which has a high linearity output from the momentum of the raindrop and the simplicity of signal processing. The weighting disdrometer shows a high sensitivity of 7.8 mV/g in static load measurement when the diaphragm thickness of the load cell is $250{\mu}m$.

• 대한기계학회논문집A
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• 제34권4호
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• pp.391-398
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• 2010

금속은 가공성이 우수하기 때문에 다양한 형태의 구조물이나 격막을 제작할 수 있다. 이런 금속 구조물이나 격막에 민감도가 월등히 우수한 실리콘 스트레인 게이지를 적용할 경우 그 응용 범위가 다양해질 수 있다. 이에 금속구조물에 다결정 실리콘 스트레인 게이지를 접착한 형태의 센서를 제안하였다. 실리콘 기판을 이용해 박막형 다결정 실리콘 스트레인 게이지를 제작하기 위한 제작공정을 확립하였으며, 제작된 실리콘 스트레인 게이지를 금속 변형부 위에 접착하기 위한 접착공정을 확립하였다. 이후 금속 외팔보에 실리콘 스트레인 게이지를 글래스 프릿 접착하여 성능평가를 실시하였다. 성능평가 결과 게이지팩터는 34.0 의 값을 가졌으며, TCR(Temperature Coefficient of Resistance)은 $-328\;ppm/^{\circ}C$의 값을 가졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.134-138
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.135-141
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by OC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$ and annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.573-576
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집A
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• pp.151-156
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• 2001

Experimental frictional and wear characteristics of silicon graphite materials is studied in this paper. Those specimens are lubricated with high temperature and highly pressurized water to simulate the same operating condition for the journal bearing and the thrust bearing on the main coolant pump bearing in the newly developing nuclear reactor named SMART(System-integrated Modular Advanced ReacTor). Operating condition of the bearings is realized by the tribometer and the autoclave. Friction coefficient and wear loss are analyzed to choose the best silicon graphite material. Pin on plate test specimens are used and coned disk springs are used to control the applied force on the specimens. Wear loss ana wear width are measured by a precision balance and a micrometer. The friction force is measured by the strain gauge which can be used under high temperature and high pressure. Three kinds of silicon graphite materials are examined and compared with each other, and each material shows similar but different results on frictional and wear characteristics.

• 한국정밀공학회지
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• 제31권8호
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• pp.683-688
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• 2014

This paper presents a high-performance flexible tactile sensor based on inorganic silicon flexible electronics. We created 100 nm-thick semiconducting silicon ribbons equally distributed with 1 mm spacing and $8{\times}8$ arrays to sense the pressure distribution with high-sensitivity and repeatability. The organic silicon rubber substrate was used as a spring material to achieve both of mechanical flexibility and robustness. A thin copper layer was deposited and patterned on top of the pressure sensing layer to create a flexible temperature sensing layer. The fabricated tactile sensor was tested through a series of experiments. The results showed that the tactile sensor is capable of measuring pressure and temperature simultaneously and independently with high precision.

• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.35-39
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• 2013

반도체센서의 응력에 따른 전기적 특성을 프로브 스테이션 위에서 측정하기 위해 소형 4점 굽힘 장치를 개발하였다. 4점 굽힘 장치는 $60{\times}83mm^2$의 면적을 갖는 소형 장치로 마이크로미터를 통해 정확한 변위를 인가함으로서 가해진 응력을 구할 수 있다. 유한요소해석법을 사용하여 기기의 오차를 예측하고 정밀도를 향상하였다. 실험적으로는 4점 굽힘 장치로 인가된 응력을 검증하기 위해 스트레인 게이지로 검증하였다.