Browse > Article
http://dx.doi.org/10.5369/JSST.2011.20.3.213

The Silicon Type Load Cell with SUS630 Diaphragm  

Moon, Young-Soon (Department of Sensor and Display Engineering Kyungpook National University)
Lee, Seon-Gil (Department of Sensor and Display Engineering Kyungpook National University)
Ryu, Sang-Hyuk (School of Electronics Engineering Kyungpook National University)
Choi, Sie-Young (School of Electronics Engineering Kyungpook National University)
Publication Information
Journal of Sensor Science and Technology / v.20, no.3, 2011 , pp. 213-218 More about this Journal
Abstract
The load cell is a force sensor and a transducer that is used to convert a physical force into a electrical signal for weighing equipment. Most conventional load cells are widely used a metal foil strain gauge for sensing element when force being applied spring element in order to converts the deformation to electrical signals. The sensitivity of a load cell is limited by its low gauge factor, hysteresis and creep. But silicon-based sensors perform with higher reliability. This paper presents the basic design and development of the silicon type load cell with an SUS630 diaphragm. The load cell consists of two parts the silicon strain gauge and the SUS630 structure with diaphragm. Structure analysis of load cell was researched by theory to optimize the load cell diaphragm design and to determine the position of peizoresistors on a silicon strain gauge. The piezo-resistors are integrated in the four points of silicon strain gauge processed by ion implantation. The thickness of the silicon strain gauge was polished by CMP under 100 ${\mu}M$. The 10 mm diameter SUS630 diaphragm was designed for loads up to 10 kg with 300 ${\mu}M$ of diaphragm thickness. The load cell was successfully tested, the variation of ${\Delta}$R(%) of four points on the silicon strain gauge is good linearity properties and sensitivity.
Keywords
Load cell; Silicon strain gauge; Diaphragm;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 S. M. Sze, "Semiconductor sensors", A Wiley-Interscience Publication, pp. 153-185, 1990.
2 D. Tandeske, "Pressure sensors : Selection and application", Marcel Dekker, pp. 77-137, 1990.
3 W. J. Kim, Y. S. Cho, J. H. Hwang, and S. Y. Choi, "Construction and characterization of the stainless steel isolated type semiconductor pressure sensor", J. Kor. Sensors Soc., vol. 11, no. 3, pp. 138-144, 2002.   과학기술학회마을   DOI   ScienceOn
4 S. H. Son, W. J. Kim and S. Y. Choi, "Fabrication and temperature compensation of silicon piezoresistive absolute pressure sensor for gas leakage alarm system", J. Kor. Sensors Soc., vol. 7, no. 3, pp. 171-178, 1998.   과학기술학회마을
5 S. C. Kim & K. D. Wise, "Temperature sensitivity in silicon piezoresistivity pressure transdusers", IEEE Transaction on Electron Devices, vol. 30, no. 7, pp. 802-810, 1983.   DOI   ScienceOn
6 W. K. Schomburg, Z. Rummler, P. Shao, K. Wulff, and L. Xie, "The design of metal strain gauges on diaphragms", Micromechanics and Microengineering, vol. 14, no. 7, pp. 1101-1108, 2004.   DOI   ScienceOn
7 S. P. Timoshenko and S. Woinowsky-Krieger, "Theory of plates and shells", McGraw-Hill, pp. 4-78, 1959.
8 한응교," 스트레인 게이지 : 이론과 응용", 보성문화사, pp. 18-32, 1976.
9 Vishay Micro-Measurements, "Design consideration for diaphragm pressure transducers", Vishay, Tech note TN-510-1, pp. 1-5, 2005.
10 R. Wiegerink, R. Zwijze, G. Krijnen, T. Lammerink and M. Elwenspoek, "Quasi-monolithic silicon load cell for loads up to 1000 kg with insensitivity to non-homogeneous load distributions", Sensors and Actuators A, vol. 80, no. 2, pp. 189-196, 2000.   DOI   ScienceOn
11 N. M. White and J.E. Brignell, "A planar thick-film load cell", Sensors and Actuators A, vol. 26, no. 1-3, pp. 313-319, 1991.   DOI   ScienceOn
12 W. J. Kim, Y. S. Cho, H. J. Kang, and S. Y. Choi, " Development of miniature weight sensor using piezoresistive pressure sensor", J. Kor. Sensors Soc., vol. 14, no. 4, pp. 237-243, 2005.   과학기술학회마을   DOI   ScienceOn