• Journal of Korean Society of Environmental Engineers
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• v.37 no.12
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• pp.668-673
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• 2015

Alumina-based catalysts with different Ce loadings were studied in the decomposition of $CF_4$ using microwave heating system. Heating material of microwave system used Silicon Carbide. The crystallographic phases of catalysts were investigated by XRD and decomposition rates of $CF_4$ were examined by GC-TCD. The catalysts of 10 wt% Ce modified $Al_2O_3$ showed higher $CF_4$ decomposition rate than un-modified $Al_2O_3$ for $500^{\circ}C$ reaction temperature. The k value of catalysts shows the order of $Ce(20)/Al_2O_3=Ce(0)/Al_2O_3<Ce(5)/Al_2O_3<Ce(10)/Al_2O_3$. XRD patterns of $Ce(0)/Al_2O_3$ were no difference before and after the reaction and showed $Al_2O_3$ phases. With the increase in Ce loadings, $CeO_2$, $AlF_3$ of XRD peaks was observed. The results was indicated that Ce modifed $Al_2O_3$ than un-modifed $Al_2O_3$ was decreased reaction temperature to $200^{\circ}C$ with same decomposition rate. Also the appropriated cerium sulfate loadings on $Al_2O_3$ were 5~10 wt%.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.532-537
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• 1998

The purpose of this study was to investigate the behavior of ozone in DI water and the reaction with wafers during the semiconductor wet cleaning process. The solubility of ozone in DI water was not only dependent on the temperature but also directly proportional to the input concentration of ozone. The lower the initial ozone concentration and the temperature, the longer the half-life time of ozone. The reaction order of ozone in DI water was calculated to be around 1.5. The redox potential reached a saturation value in 5min and slightly increased as the input ozone concentrations increased. The completely hydrophilic surface was created in Imin when HF etched silicon wafer was cleaned in ozonized DI water containing higher ozone concentrations than 2ppm. Spectroscopic ellipsometry measurements showed that the chemical oxide formed by ozonized DI water was measured to be thicker than that by piranha solution. The wafers contaminated with a non-ionic surfactant were more effectively cleaned in ozonized DI water than in piranha and ozonized piranha solutions.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Current Research on Agriculture and Life Sciences
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• v.31 no.3
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• pp.193-199
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• 2013

This study dyed rayon fabric using loess as a natural colorant. To obtain the optimal dyeing conditions, various dyeing conditions were examined (temperature, pH, time, and concentration). The color fastness was evaluated using standard washing and rubbing fastness tests. The results were as follows: The loess powder particle size ranged from 0.4 to $1.7{\mu}m$ with a distribution range of 1.1 to $1.4{\mu}m$, representing a fine and uniform manufactured loess powder. The loess component analysis showed a large amount of silicon dioxide and aluminum oxide. TheFT-IR spectra showed that the ammonium group in the rayon fabric produced N-H banding at $1,540cm^{-1}$. The highest K/S value for the rayon fabric was obtained when the pH was 8.0, and this value increased rapidly with a longer dyeing time and when increasing the loess concentration to 30% (w/v). Pre-treatment with a soybean solution produced the highest K/S value for the rayon fabric with a loess concentration of 30% (w/v). The SEM analysis showed a higher amount of loess adhered to the rayon fabric surface when increasing the loess concentration. However, pre-treatment with a cationic agent and soybean solution resulted in a much higher attachment of loess to the fabric surface. Thus, the experimental results showed that using a cationized fabric and pre-treatment with a soybean solution are more effective when dyeing rayon fabric with loess than when using only loess.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.111-117
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• 2017

This study examined the material properties of Korean rice husk ash (RHA) according to the manufacturing process, and evaluated the feasibility of its use as a new admixture for high strength concrete. For this purpose, its particle size distribution, chemical composition, and microstructure were analyzed under various parameters, such as calcination temperature ($400^{\circ}C$, $650^{\circ}C$, and $900^{\circ}C$) and the inclusion of a milling process. X-ray fluorescence analysis confirmed that the silicon oxide ($SiO_2$) content of RHA was improved to more than 92% with a calcination process at $650^{\circ}C$ or higher. In addition, microstructural analysis showed that the RHA calcined at $650^{\circ}C$ has a porous structure. Because of this, the absorption capacity of the RHA was improved. On the other hand, when the milling process was applied, the porous structure was destroyed; thus, the absorption capacity tended to decrease further. Based on the analysis results, it was concluded that RHA calcined at $650^{\circ}C$ can be used as an admixture for high strength concrete, which possesses functions of both a shrinkage reducing agent and a pozzolanic activator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.