• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.430-436
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• 1997

A piezoresistive acceleration sensor for 30 G has been fabricated by silicon micromachining method using SDB(silicon direct bonding) wafer. The structure of the piezoresistive acceleration sensor consists of a seismic square pillar type mass and four beams. This structure was fabricated by reactive ion etching and chemical etching using KOH-etchant. The rectangular square structure is used in order to compensate the deformation of the edges due to underetching. The fabricated sensor showed a linear output voltage-acceleration characteristics and its sensitivity was about $88{\mu}V/V{\cdot}g$ from 0 to 10 G.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.1
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• pp.1-7
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• 2011

Micromachining is gaining popularity due to recent advancements in MEMS(Micro Electro Mechanical Systems). Using conventional micromachining, it is relatively difficult to produce moving components in the order of microns. Photolithography for silicon material has high accuracy machining, but it has low aspect ratio. X-ray lithography has ultra high accuracy machining, but it has expensive cost. Micro-EDM(electro discharge machining) has been gaining popularity as a new alternative method to fabricate micro-structures. In this study, Micro-EDM machine is developed available for fabricate micro-structures and two processes such as side cut EDM and milling EDM is proposed. Several sets of experiment results have been performed to study the characteristics of the machining process.

• Laser Solutions
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• v.9 no.2
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• pp.11-15
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• 2006

We report experimental results on the high-speed micromachining using a femtosecond laser (800 nm, 130 fs, 1kHz) and galvanometer scanner system (Raylase, Germany). Periodic hole drilling of silicon and glass with the scan speed of 1-20 mm/s is demonstrated. Finally, we demonstrate the utility of the femtosecond laser application to ITO patterning by using a high-speed femtosecond laser scanner system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.271-277
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• 2002

In this paper, a MEMS silicon package is newly designed, fabricated for HMIC, and characterized for microwave and millimeter-wave device applications. The proposed package is fabricated by using two high resistivity silicon substrates and surface/bulk micromachining technology. It has a good performance characteristic such as -20㏈ of $S_11$/ and -0.3㏈ of $S_21$ up to 20㎓, which is useful in microwave region. It has also better heat transfer characteristics than the commonly used ceramic package. Since the proposed silicon MEMS package is easy to fabricate and wafer level chip scale packaging is also possible, the production cost can be much lower than the ceramic package. Since it will be a promising low-cost package for mobile/wireless applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.5
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• pp.680-687
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• 1999

An extensive study on miniaturized bandpass filter(BPF) appropriate for mobile communication systems is presented in this paper. The miniaturization has been accomplished by incorporating low-loss high-index materials inside a resonating cavity fabricated in silicon substrate using micromachining etching techniques. By use of materials with dielectric constant $\varepsilon_r$=500, filters with volume less than 0.11 $mm^3$ have been designed at the center frequency of 5.8 GHz with 3.3% bandwidth. The electrical performances and design tolerances of these filters for a variety of materials and shapes are discussed and design guidelines are presented herein.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.2
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• pp.57-62
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• 2003

Nano-bending method is presented to measure the Poisson's ratio of thinfilms for MEMS (Micro-Electro-Mechanical Systems) applicaiton. The douvle-ring specimen is designed and fabricated based on the surface micromachining process to facilitate the measurement of the Poisson's ratio. The Poisson's ratio can be obtained through analyzing the linear load-displacement relationship of the double ring specimen subjected to nano-indenter loading. The Present nano-bending mehod is an in-situ measurement approach due to the compatibility to the surface micromachining process. The Poisson's ratio is locally obtained at the location of the double ring specimen with micro dimension. To validate the nano-bending method, the Poisson's ratio of LPCVD (Low Pressure Chemical Vapor Deposition) poly-silicon with thickness of 2.3㎛ is investigated. Experimental results reveal that the Poisson's ratio of the poly-silicon film is 0.2569. The standard deviation of the nano-bending measurement for the stiffness of double ring specimens is 2.66%.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.374-380
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• 2005

Vibration sensors have a wide scope of applications in the field of monitoring systems that needs to perceive an undesirable physical vibration before a critical failure occurs in a system, and then costly unplanned repairs can be avoided. The conventional vibration sensors developed so far have many disadvantages, such as complex manufacturing process, bulkiness, high cost, less reliability and so on. This paper reports a simple-structured vibration sensor, which has been developed using a commercialized conductive ball and silicon bulk-micromachining technology. The sensor consists of a conductive ball placed in $600{\mu}m$-deep micromachined silicon groove, in which Au thin film has been patterned using a shadow mask technique. Prior to the formation of the Au thin film, the sharp convex corner was rounded for smooth meatl deposition on the non-planar surface at the edge of the groove. The measurement results of the fabricated vibration sensor demonstrate a stable response characteristic to low-frequency vibration range ($1{\sim}30{\;}Hz$).

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2000.05a
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.1016-1021
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• 2005

A piezoresistive pressure sensor using a silicone rubber membrane has been fabricated on the selectively diffused (100)-oriented n/n+/n silicon substrates by a unique silicon micromachining technique using porous silicon ething. The width, length and thickness of the beam were 120${\mu}m$, 600${\mu}m$ and 7${\mu}m$, respectively and the thickness of the silicone rubber membrane was 40${\mu}m$. By the fusion of silicon beam and silicone rubber membrane, the mechanical strength of the pressure sensor could be highly improved due to smaller shear stress. The effectiveness of the sensor was confirmed through an experiment and FEM simulation in which the pressure sensor was characterized.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1422-1424
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• 1994

This paper deals with piezoresistive humidity sensor using polycrystalline silicon (Poly-Si ) with membrane in sensors of semiconductor. Poly-Si piezoresistors which have no temperature dependancy are deposited on silicon wafer, membrane is formed with micromachining technology, then polyimide is formed as a hygroscopic layer. Whereas the principle of conventional humidify sensors are based on the change in electrical properties of the material, the humidity induced volume change of a polyimide layer leads to a deformation of a silicon membrane in this case. This deformation is transformed into an output voltage by Poly-Si piezoresistive. Wheatstone bridge. Fabricated piezoresistive humidity sensors showed good linearity, response time, and long term stability.