• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.75-76
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• 2006

In this paper, the polycrystalline silicon photodiodes utilizing vertically directed current path are investigated. The location of electrodes is considered with the grain direction and the current path. The relationships between grain boundaries and characteristics of photodiode are simulated to apply the vertically grown polycrystalline silicon to photodiodes. From the results, the vertically grown polycrystalline silicon photodiode is a potential candidate for CMOS image sensor. However, the increment of dark current related to grain boundaries should be reduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.439-444
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• 2024

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in silicon-based photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.16-21
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• 2016

Silicon/Carbon/CNT composites as anode materials for lithium-ion batteries were synthesized to overcome the large volume change during lithium alloying-de alloying process and low electrical conductivity. Silicon/Carbon/CNT composites were prepared by the fabrication processes including the synthesis of SBA-15, magnesiothermic reduction of SBA-15 to obtain Si/MgO by ball milling, carbonization of phenolic resin with CNT and HCl etching. The prepared Silicon/Carbon/CNT composites were analysed by XRD, SEM, BET and EDS. In this study, the electrochemical effect of CNT content to improve the capacity and cycle performance was investigated by charge/discharge, cycle, cyclic voltammetry and impedance tests. The coin cell using Silicon/Carbon/CNT composite (Si:CNT=93:7 in weight) in the electrolyte of $LiPF_6$ dissolved in organic solvents (EC:DMC:EMC=1:1:1 vol%) has better capacity (1718 mAh/g) than those of other composition coin cells. The cycle performance of coin cell was improved as CNT content was increased. It is found that the coin cell (Si:CNT=89:11 in weight) has best capacity retension (83%) after 2nd cycle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.136-139
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• 1995

This paper summarizes recent development in the silicon cell area : PERL (passivated emitter, rear locally diffused cells) ,BCSC ( buried contact solar cells ) rind Hybrid buried contact / PERL cells.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.1043-1044
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• 2013

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.95-96
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• 2009

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.11
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• pp.118-123
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• 2017

To manufacture MG-Si (Metallurgical grade silicon) for use in various industries, Acid leaching experiments were performed to remove aluminum (Al) and iron (Fe), which are the most common impurities found in the silicon raw material. The silicon raw material was reacted with five types of acids (HCl, HF, H2SO4, HNO3, H3PO4) at 1, 2, 4, and 6M; 1M HF showed the highest Al and Fe removal rates, 97.9% and 95.2%, respectively. HF, however, resulted in an 18% reduced yield due to the silicon corrosion properties. To minimize the yield reduction, 2M HCl, which has a second removal ratio result, was mixed with 1M HF and applied to the silicon raw material. The experiment was conducted to select the optimal conditions for the mixed solution, which were $80^{\circ}C$ and 2hr. Under the optimal conditions, the residual Al and Fe concentrations were 141 ppmw and 93 ppmw, respectively, and it very easy to produce MG-Si with 3N grade purity.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1327-1329
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• 1998

It is very important to select superior inter-layer PMD(Pre Metal Dielectric) materials which can act as penetration barrier to various impurities created by CMP processes. In this paper, hot carrier degradation and device characteristics were studied with material variation of PMD-1 layers, which were split by LP-TEOS, SR-Oxide, PE-Oxynitride, PE-Nitride, PE-TEOS films. It was observed that the oxynitride and nitride using plasma was greatly decreased in hot carrier effect in comparison with silicon oxide. Consequently, silicon oxide turned out to be a better PMD-1 material than PE-oxynitride and PE-nitride. Also, LP-TEOS film was the best PMD-1 material Among the silicon oxides.

• Journal of the Korean Professional Engineers Association
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• v.20 no.4
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• pp.42-44
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• 1987

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.