• Journal of Korea Foundry Society
• /
• v.29 no.6
• /
• pp.257-264
• /
• 2009

The effects of silicon and molybdenum on the temperature-dependent properties of high silicon and high molybdenum ductile cast iron were investigated. Microstructure was composed of ferrite, cell boundary complex carbide, carbide precipitated in the grain and graphite. The number and size of carbide decreased with the increase of silicon content and increased with the increase of molybdenum content, however, the size of cell boundary carbide increased above 0.81wt%Mo. The room temperature tensile strength increased with the increase of silicon and molybdenum contents. That did not increase with the latter with more than 0.8wt%. Meanwhile the high temperature tensile strength showed the similar trend to that of room temperature one, that of the specimen with 0.55wt%Mo was the highest. The $A_1$ transformation temperature increased with the silicon and molybdenum contents, and showed similar tendency with the variation of strength. It was discussed due to the solubility limit of Molybdenum in ferrite, of which value was assumed to be in the vicinity of 0.81wt%Mo. The weight after oxidation at 1,173K showed the result caused by the difference in solubility of molybdenum in the matrix. That and the thickness change after oxidation did not show any consistent trend with the silicon and molybdenum contents.

• Journal of the Korean Ceramic Society
• /
• v.39 no.7
• /
• pp.622-627
• /
• 2002

Multi-layer composites consisting of silicon nitride, silicon nitride-silicon carbide and boron nitride-alumina layers were prepared fly stacking the corresponding ceramic tapes. The composites demonstrated self-diagnostic capability and non-catastrophic failure behavior. The composites consisting of many thin layers exhibited high strength and stepwise increase of the electrical resistance during the flexure test. The strength of the composite with too thick silicon nitride layers was low and the electrical resistance was abruptly increased to the detection limit of the digital multi-meter during the test. An extensive crack branching was observed in the weak (BN + Al$_2$O$_3$)layer.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.26 no.9
• /
• pp.1226-1233
• /
• 2002

The purpose of the present study was to examine some basic aspects of laser chemical vapor deposition that will be ultimately utilized for solid freeform fabrication of three dimensional objects. Specifically, deposition of silicon carbide (SiC) using tetramethylsilane (TMS) as precursor was studied for a rod grown by $CO_2$laser-assisted chemical vapor deposition. First, temperature distribution for substrate was analyzed to select proper substrate where temperature was high enough for SiC to be deposited. Then, calculations of chemical equilibrium and heat and mass flow with chemical reactions were performed to predict deposition rates, deposit profiles, and deposit components. Finally, several rods were experimentally grown with varying chamber pressure and compared with the theoretical results.

• Journal of Photoscience
• /
• v.6 no.4
• /
• pp.183-186
• /
• 1999

We have been prepared the porous silicon carbide (PSC) by electrochemical etching of silicon carbide single crystals. Samples of PSC have been studied by the methods of scanning electron microscope (SEM) and photoluminescence (PL). Two PL bands attributed to the blue and green light emission were observed in this study. According to the anodization conditions, the main source of emission in the oxidized layers of PSC lies in the different surface defect centers which consist of different geometrical structures due to the polytypes. It means that origin of these PL bands may be existed in different size pores simultaneously. The present results indicate that the high energy band comes from the top porous layers while the low energy band comes from the lower porous layers.

• Journal of the Korean Ceramic Society
• /
• v.32 no.10
• /
• pp.1162-1168
• /
• 1995

Systematic studies of the effects of additives and processing variables on the sintered density and the effect of crystalline forms of starting powders on the microstructure of pressureless sintered silicon carbide are described. Oxide additives were effective for the densification of SiC up to 96% of theoretical density at temperature as low as 185$0^{\circ}C$. Use of embedding powder increased the sintered density, up to 98% of theoretical density, by decreasing the weight loss during sintering. Composite type duplex microstructure has been developed due to the $\beta$longrightarrow$\alpha$ phase transformation of SiC by sintering at 185$0^{\circ}C$ and heat treatment at 195$0^{\circ}C$ for 1h.

• Journal of the Korean Ceramic Society
• /
• v.43 no.6 s.289
• /
• pp.327-332
• /
• 2006

The effect of the processing parameters on the sintered density and strength of silica-bonded SiC (SBSC) ceramics was investigated for three types of batches with different particle sizes. The SBSC ceramics were fabricated by an oxidation-bonding process. The process involves the sintering of powder compacts in air so that the SiC particles bond to each other by oxidation-derived $SiO_2$ glass or cristobalite. A finding of this study was that a higher flexural strength was obtained when the starting powder was smaller. When a ${\sim}0.3_{-{\mu}m}$ SiC powder was used as a starting powder, a high strength of $257{\pm}42\;MPa$ was achieved at a relative density of ${\sim}80%$.

• Tribology and Lubricants
• /
• v.11 no.5
• /
• pp.26-30
• /
• 1995

Sliding experiments have been conducted on alumina and silicon carbide ceramics. Wear and friction data of both materials indicate that wear proceeds in two distinct stages. The wear occurs by a relatively mild plastic-grooving process in the initial stage, but eventually gives way to a severe grain pull-out process after a defined period of sliding test. The datails of the transition mechanism are presented. The effects of grain size and second phase particle on the wear transition are also presented.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.2
• /
• pp.78-81
• /
• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• The Korean Journal of Ceramics
• /
• v.3 no.3
• /
• pp.177-181
• /
• 1997

Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

• Journal of the Korean Ceramic Society
• /
• v.53 no.6
• /
• pp.581-596
• /
• 2016

A comprehensive review on sliding and solid particle erosion wear characteristics of silicon carbide (SiC) ceramics and SiC composites is provided. Sliding or erosion wear behavior of ceramics is dependent on various material characteristics as well as test parameters. Effects of microstructural and mechanical properties of SiC ceramics are particularly focused to understand tribological performance of SiC ceramics. Results obtained between varieties of pairs of SiC ceramics indicate complexity in understanding dominant mechanisms of material removal. Wear mechanisms during sliding are mainly divided in two groups as mechanical and tribochemical. In solid particle erosion conditions, wear mechanisms of SiC ceramics are explained by elastic-plastic deformation controlled micro-fracture on the surface followed by radial-lateral crack propagation beneath the plastic zone.