Journal of Photoscience

Korean Society of Photoscience (한국광과학회)
권호 표지

OPTICAL CHARACTERISTICS OF POROUS SILICON CARBIDE BY PHOTOLUMINESCENCE SPECTROSCOPY

  • Lee, Ki-Hwan (Dept. of Chemistry and The Research Institute for Basic Science, Kongju National University) ;
  • Du, Ying-Lei (Fundamental Physics Center, University of Science and Technology of china) ;
  • Lee, Tae-Ho (Dept. of Chemistry and The Research Institute for Basic Science, Kongju National University)
  • Published : 1999.12.01
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Abstract

We have been prepared the porous silicon carbide (PSC) by electrochemical etching of silicon carbide single crystals. Samples of PSC have been studied by the methods of scanning electron microscope (SEM) and photoluminescence (PL). Two PL bands attributed to the blue and green light emission were observed in this study. According to the anodization conditions, the main source of emission in the oxidized layers of PSC lies in the different surface defect centers which consist of different geometrical structures due to the polytypes. It means that origin of these PL bands may be existed in different size pores simultaneously. The present results indicate that the high energy band comes from the top porous layers while the low energy band comes from the lower porous layers.

Keywords

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