• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• 전자공학회논문지A
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• 제32A권1호
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• pp.200-205
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• 1995

The 1st and 2nd-order grating structure for long wavelength DFB(Distributed FeedBack) laser diodes are successfully fabricated on InP substrates by using electron beam lithography and reactive ion etch techniques, and also characterized non-destructively by diffraction analysis without removal of photo-resis layer. A new composite layer made by lifted-off Cr layer on thin SiO2 film is developed and used as an etch mask, because PMMA, the e-beamresist, is unsuitable for reactive ion etch of InP. In addition, it is experimentally confiremed that diffraction analysis makes it possible to predict the grating parameters, and the analysis can be used as a non-destructive on-line test to prevent incomplete gratings from being successively processed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.45-46
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• 2005

The piezoelectric ZnO thin films were deposited onto Al/Si substrate in order to figure out the crystalline and the residual stress of deposited films. As the $Ar/O_2$ gas ratio is increased, c-axis orientation of deposited films is significantly enhanced and also the residual stresses of ZnO films are all compressive. They are decreased from -1.2 GPa to -950 MPa as the $Ar/O_2$ gas ratio is increased. A diaphragm-based piezoelectric microspeaker fabricated on ONO films shows about 14 mPa output pressure at 1 kHz with $8V_{peak-to-peak}$.

• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2017년도 제56차 하계학술대회논문집 25권2호
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• pp.131-132
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• 2017

본 연구에서는 열처리 온도에 따른 전도 특성을 조사하기 위하여 RF magnetron sputtering을 이용해서 Si기판 위에 SBN 박막을 증착시킨 후, SBN 박막에 $650{\sim}800[^{\circ}C]$의 온도 범위에서 열처리를 하였다. $650[^{\circ}C]$에서 열처리된 박막의 경우 표면 거칠기는 약 0.42[nm]로 나타났으며, -5~+5[V]의 전압 범위에서 누설전류밀도는 $10-5[A/cm^2]$ 이하로 안정된 값을 나타내었다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.32.2-32
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• 2002

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.47-47
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• 2007

Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.70-73
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• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1404_1405
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• 2009

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. $GeH_4$ is used in many applications with $Si_2H_6$ gas, such as amorphous alloy, a thin film of silicon and solar cell. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients, the electron drift velocity W, the longitudinal and transverse diffusion coefficient $ND_L$ and $ND_T$, and the ionization coefficient $\alpha$/N in $GeH_4$gas over the E/N range from 0.01 to 1000 Td by two-term approximation of the Boltzmann equation.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.80-82
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• 2009

The dependence of the efficiency characteristics of hydrogenated amorphous silicon single junction solar cells on the various intrinsic layer thickness has been investigate in the glass/$SnO_2$:F/p,i,n a-Si:H/Al type of amorphous silicon solar cells by cluster PECVD system. The open circuit voltage, short circuit current, fill factor and conversion efficiency have been measured under AM 1.5 condition. The result of the cell performance was improved about 8.2% due to an increase in the short circuit current.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.49-53
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• 2004

고분자 재료가 전자산업분야에서 절연재료나 접착제로 널리 사용되고 있다. 실리콘 기판위에 증착된 고분자 층에는 기판과의 열팽창계수 차이로 인해 열응력이 발생할 수 있다 고분자 층과 기판사이의 열적 성질의 차이로 인해 큰 잔류응력이 야기된다. 본 연구에서는 레이저 주사법을 이용하여 열적변형으로 인한 곡률변화를 측정한 후, 해석적 방법을 적용하여 수정된 박막 물성을 구하는 방법을 제시하고 있다.