Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication & Characterization of Grating Structures for Long Wavelength DFB-LD Using Electron Beam Lithography

전자선 묘화를 이용한 장파장 DFB-LD용 격자 구조의 제작 및 특성 분석

  • 송윤규 (서울대학교 전자공학과) ;
  • 김성준 (서울대학교 전자공학과) ;
  • 윤의준 (서울대학교 무선재료공학과 및 반도체 연구소)
  • Published : 1995.01.01
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Abstract

The 1st and 2nd-order grating structure for long wavelength DFB(Distributed FeedBack) laser diodes are successfully fabricated on InP substrates by using electron beam lithography and reactive ion etch techniques, and also characterized non-destructively by diffraction analysis without removal of photo-resis layer. A new composite layer made by lifted-off Cr layer on thin SiO2 film is developed and used as an etch mask, because PMMA, the e-beamresist, is unsuitable for reactive ion etch of InP. In addition, it is experimentally confiremed that diffraction analysis makes it possible to predict the grating parameters, and the analysis can be used as a non-destructive on-line test to prevent incomplete gratings from being successively processed.

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