• 제목/요약/키워드: SiOF Thin Film

검색결과 2,902건 처리시간 0.03초

Formation of Buffer Layer on Mica for Application to Flexible Thin Film Transistors

  • Oh, Joon-Seok;Lee, Seung-Ryul;Lee, Jin-Ho;Ahn, Byung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.749-751
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    • 2007
  • A buffer layer consisting of $SiO_x/Ta/Ti$ has been developed in order to overcome the adhesion and stress problems between poly-Si film and mica. Polycrystalline silicon thin film transistor was successfully fabricated on the mica and transferred to a flexible plastic substrate.

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$WO_3$를 이용한 박막형 슈퍼캐패시터의 제작 및 특성 평가 (Fabrication and Characterization of Thin Film Supercapacitor using $WO_3$)

  • 신호철;신영화;임재홍;윤영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.575-578
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    • 2000
  • In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.

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아르곤 플라즈마처리에 의한 다결정 $Si_{1-x}Ge_x$박막의 표면거칠기 개선 (The Improvement of Surface Roughness of Poly-$Si_{1-x}Ge_x$Thin Film Using Ar Plasma Treatment)

  • 이승호;소명기
    • 한국세라믹학회지
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    • 제34권11호
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    • pp.1121-1128
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    • 1997
  • In this study, the Ar plasma treatment was used to improve the surface roughness of Poly-Si1-xGex thin film deposited by RTCVD. The surface roughness and the resistivity of Si1-xGex thin film were investigated with variation of Ar plasma treatment parameters (electrode distance, working pressure, time, substrate temperature and R.F power). When the Ar plasma treatment was used, the cluster size decreased by the surface etching effect due to the increasing surface collision energy of particles (ion, neutral atom) in plasma under the conditions of decreasing electrode distance and increasing pressure, time, temperature, and R. F power. Although the surface roughness value decreased by the reduction of the cluster size due to surface etching effect, however, the resistivity increased. This may be due to the surface damage caused by the increasing surface collision energy. It was concluded that the surface roughness could be improved by the Ar plasma treatment, while the resistivity was increased by the surface damage on the substrate.

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AFM Scratching 기법을 이용한 4H-SiC기판상의 Al 박막 초미세 패턴 형성 연구 (Nano-scale Patterning of Al thin film on 4H-SiC using AFM tip Scratching)

  • 안정준;김재형;박예슬;구상모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.351-351
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    • 2010
  • Nanoscale patterning using an atomic force microscope tip induced scratching was systematically investigated in AI thin film on 4H-SiC. To identify the effects of the scratch parameters, including the tip loading force, scratch speed, and number of scratches, we varied each parameters and evaluated the major parameter which has intimate relationship with the scale of patterns. In this work, we present the successful demonstration of nano patterning of Al thin film on a 4H-SiC substrate using an AFM scratching and evaluated the scratch parameters on Al/4H-SiC.

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마그네트론 RIE를 이용한 다결정 3C-SiC의 식각 특성 (Etching Characteristics of Polyctystalline 3C-SiC Thin Films by Magnetron Reactive Ion Etching)

  • 온창민;김귀열;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.331-332
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    • 2007
  • Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

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RPCVD system을 이용한 ${\mu}c$-Si:H의 저온 직접 성장 연구 (The study of direct ${\mu}c$-Si:H film growth using RPCVD system in low temperature)

  • 안병재;김도영;임동건;이준신
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1818-1820
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    • 1999
  • This paper presents direct ${\mu}c$-Si:H thin film growth on the glass substrates using RPCVD system (remote plasma chemical vapor deposition) in low temperature. Hydrogenated micro-crystalline silicon deposited by RPCVD system in low temperature is very useful material for photovoltaic devices, sensor applications, and TFTs (thin film transistors). Varying the deposition conditions such as substrate temperature, gas flow rate, reactive gas ratio $(SiH_4/H_2)$, total chamber pressure, and rf power, we deposited ${\mu}c$-Si:H thin films on the glass substrates (Corning glass 1737). And then we measured the structural and electrical properties of the films.

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Spectroscopic Ellipsometer를 이용한 삼원 SiO박막의 유전율특성 (The Dielectric Properties by Triple SiO Thin Film using Spectroscopic Ellipsometer)

  • 김병인;이우선;김창석;이상일;황석영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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    • pp.249-251
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    • 1994
  • We fabricated the sample of M-I-M with the insulating layer SiO. Refractive index of wave length, photon energy, absorption rate of SiO evaporation thin film are experimentally examined by spectroscopic Ellipsometer. The calculated equations of refractive index, absorption rate and permittivity of SiO thin film are induced. Calculated values and experimental values are compared and then mutual validity is proved.

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Hysteresis Characteristics in Low Temperature Poly-Si Thin Film Transistors

  • Chung, Hoon-Ju;Kim, Dae-Hwan;Kim, Byeong-Koo
    • Journal of Information Display
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    • 제6권4호
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    • pp.6-10
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    • 2005
  • The dependence of hysteresis characteristics in low temperature poly-Si (LTPS) thin film transistors (TFTs) on the gate-source voltage (Vgs) or the drain-source voltage (Vds) bias is investigated and discussed. The hysteresis levels in both p-type and n-type LTPS TFTs are independent of Vds bias but increase as the sweep range of Vgs increases. It has been found that the hysteresis in both p-type and n-type LTPS TFTs originated from charge trapping and de-trapping in the channel region rather than at the source/drain edges.

솔-젤 Dip Coating에 의한 Sb-doped $SnO_2$ 투명전도막의 제조 및 특성 (Fabrication of Sb-doped $SnO_2$ transparent conducting films by sol-gel dip coating and their characteristics)

  • 임태영;오근호
    • 한국결정성장학회지
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    • 제13권5호
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    • pp.241-246
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    • 2003
  • ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

졸겔법으로 제작된 BST 박막의 구조적 특성 (A Study on Surface of BST Thin Films by Sol-Gel Methods)

  • 홍경진;민용기;조재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.377-380
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    • 2001
  • The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

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