Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

The study of direct ${\mu}c$-Si:H film growth using RPCVD system in low temperature

RPCVD system을 이용한 ${\mu}c$-Si:H의 저온 직접 성장 연구

  • Ahn, Byeong-Jae (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Do-Young (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Lim, Dong-Gun (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Yi, Jun-Sin (School of Electrical and Computer Engineering, Sungkyunkwan University)
  • 안병재 (성균관대학교 전기전자컴퓨터공학부 신소재연구실) ;
  • 김도영 (성균관대학교 전기전자컴퓨터공학부 신소재연구실) ;
  • 임동건 (성균관대학교 전기전자컴퓨터공학부 신소재연구실) ;
  • 이준신 (성균관대학교 전기전자컴퓨터공학부 신소재연구실)
  • Published : 1999.07.19
Download PDF
⟨ Previous Next ⟩

Abstract

This paper presents direct ${\mu}c$-Si:H thin film growth on the glass substrates using RPCVD system (remote plasma chemical vapor deposition) in low temperature. Hydrogenated micro-crystalline silicon deposited by RPCVD system in low temperature is very useful material for photovoltaic devices, sensor applications, and TFTs (thin film transistors). Varying the deposition conditions such as substrate temperature, gas flow rate, reactive gas ratio $(SiH_4/H_2)$, total chamber pressure, and rf power, we deposited ${\mu}c$-Si:H thin films on the glass substrates (Corning glass 1737). And then we measured the structural and electrical properties of the films.

Keywords