• Animal Bioscience
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• v.34 no.7
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• pp.1210-1220
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• 2021

Objective: Unlike mammals, goose fatty liver shows a strong tolerance to fatty acids without obvious injury. Stearyl-coenzyme A desaturase 1 (SCD1) serves crucial role in desaturation of saturated fatty acids (SAFs), but its role in the SAFs tolerance of goose hepatocytes has not been reported. This study was conducted to explore the role of SCD1 in regulating palmitic acid (PA) tolerance of goose primary hepatocytes. Methods: 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide was examined to reflect the effect of PA on hepatocytes viability, and quantitative polymerase chain reaction was used to detect the mRNA levels of several genes related to endoplasmic reticulum (ER) stress, inflammation, and apoptosis, and the role of SCD1 in PA tolerance of goose hepatocytes was explored using RNA interfere. Results: Our results indicated that goose hepatocytes exhibited a higher tolerant capacity to PA than human hepatic cell line (LO2 cells). In goose primary hepatocytes, the mRNA levels of fatty acid desaturation-related genes (SCD1 and fatty acid desaturase 2) and fatty acid elongate enzyme-related gene (elongase of very long chain fatty acids 6) were significantly upregulated with 0.6 mM PA treatment. However, in LO2 cells, expression of ER stress-related genes (x box-binding protein, binding immunoglobulin protein, and activating transcription factor 6), inflammatory response-related genes (interleukin-6 [IL-6], interleukin-1β [IL-1β], and interferon-γ) and apoptosis-related genes (bcl-2-associated X protein, b-cell lymphoma 2, Caspase-3, and Caspase-9) was significantly enhanced with 0.6 mM PA treatment. Additionally, small interfering RNA (siRNA) mediated downregulation of SCD1 significantly reduced the PA tolerance of goose primary hepatocytes under the treatment of 0.6 mM PA; meanwhile, the mRNA levels of inflammatory-related genes (IL-6 and IL-1β) and several key genes involved in the phosphoinositide 3-kinase (PI3K)/protein kinase B (AKT), forkhead box O1 (FoxO1), mammalian target of rapamycin and AMPK pathways (AKT1, AKT2, FoxO1, and sirtuin 1), as well as the protein expression of cytochrome C and the apoptosis rate were upregulated. Conclusion: In conclusion, our data suggested that SCD1 was involved in enhancing the PA tolerance of goose primary hepatocytes by regulating inflammation- and apoptosis-related genes expression.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.507-513
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• 1999

8mol%-yttria-stabilized zirconia(YSZ) thin films as oxygen ion conductor were deposited by rf-magnetron sputtering, and the oxygen gas sensors with the structure of $SiO_2$ substrate/Ni-NiO mixed reference layer/Pt/YSZ/Pt were fabricated and their oxygen sensing properties were investigated. The steady-state electro-motive force (EMF) values were measured as a function of oxygen partial pressure ($PO_2;form 1.013\times10^3 \textrm{Pa \;to}\; 1.013\times10^5$Pa) and operating temperature ($300^{\circ}C$ to $700^{\circ}C$). The fabricated YSZ oxygen sensor showed the best oxygen sensing properties at 50$0^{\circ}C$. However, oxygen sensing properties were very low at the temperature lower than 30$0^{\circ}C$ due to the lack of oxygen ion mobility and at the temperature higher than $700^{\circ}C$ due 새 intermixing of materials between the layers. Especially, the YSZ sensor operating at $500^{\circ}C$ and oxygen partial pressure above $1.565\times10^4$Pa showed the oxygen sensing properties close to the values predicted by ideal Nernst equation.

• Journal of Korea Foundry Society
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• v.2 no.3
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• pp.2-15
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• 1982

In this study, the influenced of graphite shape on the boriding of cast iron and boride structure was investigated. Gray cast iron, ferritic and pearlitic ductile cast iron were borided at 750,850,900 and $950^{\circ}C$ for 1,3 and 5 hours by powder pack method with the mixture of $B_4C_9\;Na_2B_4O_7$, $KBF_4$ and Shc. The boride layer was consisted of FeB(little), $Fe_2B$ (main) and graphite. Some possibility of the existence of unknown Fe-B-C compound in the boride layer was suggested. And precipitates in the diffusion zone was $Fe_3(B,C)$. The concentration of Si and precipitation of $Fe_3(B,C)$ in the ${\alpha}$ layer raised the hardness of this Zone. The depth and hardness of boride layer increased with the increase of treating temperature and tim. But high temperature (over $950^{\circ}C)$ caused pore at graphite position and long treating time (5hrs) sometimes caused formation of graphite layer beneath the boride layer. So, for the practical application of borided cast iron, treating in short time and at low temperature was recommended. And for ductile cast iron, ferritizing or pearlitizing heat treatment was seemmed to be possible at the same time with boriding. The graphite in the boride layer was deeply concerned with the qualitx and characteristics of the boride layer. And it greatly influenced on the shape of the boride phase, structure of the boride layer. Generally speaking, the existance of graphite restrained the growth of the boride phase. But the boundary between the gsaphite and the matrix acted as the shortcut of boron diffusion. So, for gray cast iron, the graphite layed length-wise led the formation of boride layer.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.416-423
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• 1993

Hydrogen depth profiling was performed by H(19F, $\alpha$${\gamma}$) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The ${\gamma}$ rays produced by the reaction were measure dby 3" $\times$3" and 6" $\times$8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.9-17
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• 2011

Nano-composite solders have been studied to improve the properties of Pb-free solder joints. The nanoparticles in the composite solders were carbon nanotubes(CNTs), metals (Ag, Ni, Cr, etc.), ceramics (SiC, $ZrO_2$, $TiB_2$, etc.). To fabricate the nano-composite solders, mechanical mixing methods and in-situ fabrication method has been used for well-dispersed nano phase. The characteristic properties of the nano-composite solders were high creep resistance, low undercooling, low IMC growth rate and fine microstructures. More researches on the nano-composite solders are required to improve the processibility and the reliability of the nano-composite solder joints.

• Tribology and Lubricants
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• v.16 no.6
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• pp.477-483
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• 2000

Rolling contact fatigue (RCF) tests were performed for two kinds of commercial silicon nitride balls using 4-Ball rolling contact fatigue life tester under EHL condition (Λ=8.9) and boundary lubrication condition (Λ=0.2). All the test balls were finished up to the dimensional accuracy of Grade 5 defined in KS B 2001 (Steel Balls for Ball Bearings) with a size of 8.731 mm. RCF tests were then conducted under the initial theoretical maximum contact stress 6.63 GPa and the spindle speed 10,000 rpm. All the test balls were not failed until 3.75 $\times$ 107 contact cycles and wear tracks of test balls were not conspicuous under EHL condition (Λ= 8.9). In the operations of low lambda regime (Λ= 0.2), all the test balls were surface damaged and high rolling wear resistance was achievable in fully densified using MgO 1 wt% and HIPed balls. Rolling wear of silicon nitride balls under boundary lubrication condition depend mainly on grain size and intergranular phase content of silicon nitride balls.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.256-261
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• 2001

These experiments were carried out to examine the effects of element substitution of Zn and La-Zn for Sr-ferrite. The calcined properties of Zn and La-Zn element substitution were examined, and also the sintered magnetic properties were compared with the stoichiometric condition. The magnetization properties of calcined SrM materials is as follows; M$\_$s/ : 61.06 emu/g. Also, the magnetization properties of calcined Zn$\_$0.3/-SrM materials is as follows; M$\_$s/ : 66.90 emu/g. The sintered magnetic properties of (La-Zn)$\_$0.3/-SrM composition is as follows; B$\_$r/ : 4.21 kG, BH$\_$max/: 4.19 MGOe.

• Journal of Microbiology and Biotechnology
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• v.22 no.9
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• pp.1288-1295
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• 2012

Exposure to bioaerosols causes various adverse health effects including infectious and respiratory diseases, and hypersensitivity. Controlling exposure to bioaerosols is important for disease control and prevention. In this study, we evaluated the efficacies of various functional filters coated with antimicrobial chemicals in deactivating representative microorganisms on filters or as bioaerosols. Tested functional filters were coated with different chemicals that included (i) Ginkgo and sumac, (ii) Ag-apatite and guanidine phosphate, (iii) $SiO_2$, ZnO, and $Al_2O_3$, and (iv) zeolite. To evaluate the filters, we used a model ventilation system (1) to evaluate the removal efficiency of bacteria (Escherichia coli and Legionella pneumophila), bacterial spores (Bacillus subtilis spore), and viruses (MS2 bacteriophage) on various functional filters, and (2) to characterize the removal efficiency of these bioaerosols. All experiments were performed at a constant temperature of $25^{\circ}C$ and humidity of 50%. Most bacteria (excluding B. subtilis) rapidly decreased on the functional filter. Therefore, we confirmed that functional filters have antimicrobial effects. Additionally, we evaluated the removal efficiency of various bioaerosols by these filters. We used a six-jet collision nebulizer to generate microbial aerosols and introduced it into the environmental chamber. We then measured the removal efficiency of functional filters with and without a medium-efficiency filter. Most bioaerosol concentrations did not significantly decrease by the functional filter only but decreased by a combination of functional and medium-efficiency filter. In conclusion, functional filters could facilitate biological removal of various bioaerosols, but physical removal of these by functional was minimal. Proper use of chemical-coated filter materials could reduce exposure to these agents.

• Journal of the Korean Ceramic Society
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• v.47 no.3
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• pp.256-261
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• 2010

Physical properties of Plasma electrolytic oxidized 8 different types of Al alloys, A-1100, A-2024, A-5052, A-6061, A-6063, A-7075, ACD-7B and ACD-12 were investigated. The electrolyte for PEO was $Na_2SiO_3$ solutions with NaOH and some alkali earthen metal salts. Porous layer near the surface of PEO coating was not found, and surface roughness Ra50 was below 2.5 ${\mu}m$. Surface roughness was affected by growth rate of plasma electrolytic oxidized layer, not by Si content in Al alloy.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.