• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.377-385
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• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.07a
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• pp.328-328
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• 2004

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.199-207
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• 2011

A Ku-band low noise amplifier has been designed and fabricated by using 0.25 um SiGe BiCMOS process. The developed Ku-band LNA RFIC which has been designed with hetero-junction bipolar transistor(HBT) in the BiCMOS process have noise figure about 2.0 dB and linear gain over 19 dB in the frequency range from 9 GHz to 14 GHz. Optimization technique for p-tap value and electro-magnetic(EM) simulation technique had been used to overcome the inaccuracy in the PDK provided from the foundry service company and to supply the insufficient inductor library. The finally fabricated low noise amplifier of two fabrication runs has been implemented with the size of $0.65\;mm{\times}0.55\;mm$. The pure amplifier circuit layout with the reduced size of $0.4\;mm{\times}0.4\;mm$ without the input and output RF pads and DC bais pads has been incorporated as low noise amplication stages in the multi-function RFIC for the active phased array antenna of Ku-band satellite VSAT.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.415-422
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• 2004

DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this paper, a 5.8 GHz down-conversion mixer for DSRC communication system was designed and fabricated using 0.8 ${\mu}{\textrm}{m}$ SiGe HBT process technology and RF/LO matching circuits, RF/LO input balun circuits, and If output balun circuit were all integrated on chip. The chip size of fabricated mixer was 1.9 mm${\times}$1.3 mm and the measured performance was 7.5 ㏈ conversion gain, －2.5 ㏈m input IP3, 46 ㏈ LO to RF isolation, 56 ㏈ LO to IF isolation, current consumption of 21 mA for 3.0 V supply voltage.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.771-774
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• 2003

Passivation Ledge's device is taken possession on one-side to the Emitter in this Paper. contact used in this paper Pt as Passivation Ledge of device to use Schottky Diode which has leitmotif, It is accomplished Current Modulation that we wish to do purpose using this device. Space Charge acts as single device which is becoming Passivation to know this phenomenon. This device becomes floating as well as Punched-through. V$_{L}$ (Voltage for Ledge) = - 0.5V ~ 0.5V variable values , PD(Partially Depleted ; Λ＞0), as seeing FD(Fully Depleted ; A = 0) maximum electric current gains and Gummel Plot of I-V characteristics (V$_{L}$ = 0.1/ V$_{L}$ = -0.1 ). Becomming Degradation under more than V$_{L}$ = 0.1 , less than V$_{L}$ =-0.05 and Maximum Gain(=98.617076 A/A) value in the condition V$_{L}$ = 0.1. A Change of Modulation is electric current gains by using Schottky Diode and Extrinsic Base PN Diode of Passivation Ledge to Emitter Depletion Layer in HBT of Gummel-Poon I-V characteristics and the RF wide-band electric current gains change the Modulation of CE(Common-Emitter) amplifier description, and it had accomplished Current Gain Modulation by Ledge Bias that change in high frequency and wide bands. wide bands.s.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.2-11
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• 2000

Technologies for high-speed transistors, active devices essential to the fabrication of millimeter wave circuits have developed drastically with the design and processing techniques. The high frequency transistors, made of GaAs or InP related compound semiconductors mainly, are in the form of MODFETs and HBTs. Other than traditional III-V compound semiconductor materials, SiGe and GaN technologies are emerging as viable candidates of millimeter-wave devices. In this paper, basis and applications of millimeter-wave transistors are introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.186.2-189
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• 2001

요실리콘을 기반으로 하는 박막은 반도체 재료로 Si, Si:Ge, SiC등이 사용되고있으며, 절연박막재료로 SiN, SiOxNy, SiOx 등이 있다. 이들 재료는 국내 반도체 산업의 핵심위치에 있는 물질이다. 한국 산업의 근간이라 할 수 있는 메모리분야에 적용될 뿐만 아니라 TFT-LCD, 태양전지, 각종 센서, X-ray 사진 촬영기 개발에도 응용되고 있다. 본 논문에서는 Silicon-based 박막의 제조기법과 그에 따른 다양한 실리콘 박막 실리콘 트랜지스터를 이용한 능동형 액정과 유기발광 화소제어 활용, 센서 응용 부분에서 태양전지, X-ray 촬영기활용 분야에서 기술현황 시장분석을 통해 차세대 연구개발의 방향을 제시하고자 한다. 현재 국내에서 실리콘 박막의 가장 큰 응용 분야는 메모리 소자의 평판디스플레이의 TFT-LCD 시장이다. 그러나 실리콘 박막으로 가능한 응용분야는 아직 산업계에서 열매를 맺지 못한 분야가 더 많고 실제로 적용할 수 있는 분야의 다양함을 본 논문을 통해 소개한다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.1
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• pp.18-27
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• 2004

In this paper, we presents an analytical simulation procedure for evaluation in baseband digital modulated signals distortions in the present of RF power amplifier(SSPA) nonlinear behavior and backoff operations of OFDM wireless transmission system. we obtained the optimum nonlinear transfer function of designed SSPA with the SiGe HBT bias currents of OFDM multi-channel wireless transmission system and compared this transfer function to SSPA nonlinear modeling functions mathematically, we finds optimum bias conditions of designed SSPA. With the derived nonlinear modeling function of SSPA, We analysed the PSD characteristics of in-band and out-band output powers of SSPA EVM measurement results of distorted constellation signals with the input power levels of SSPA. The results of paper can be applied to find the SSPA linearly with optimum bias currents and determine the SSPA input backoff bias for AGC control circuits of SSPA.

• Journal of electromagnetic engineering and science
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• v.4 no.4
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• pp.168-174
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• 2004

A bandwidth-enhanced and phase noise-improved differential LC-tank VCO is proposed in this paper. By connecting the varactors to the bases of the cross-coupled transistors of the proposed LC-tank VCO, its input negative resistance has been widened. Also, the feedback capacitor Cc in the cross-coupling path of the proposed LC-tank VCO attenuates the output common-mode level modulated by the low-frequency noise because the modulated common-mode level jitters the varactor bias point and degrades phase noise. Compared with the fabricated conventional LC-tank VCO, the proposed LC-tank VCO demonstrates $200\;\%$ enhancement in tuning range, and 6 - dB improvement in phase noise at 6 MHz offset frequency from 5.4-GHz carrier. We achieved the phase noise of - 106 dBc/Hz at 6 MHz offset, and $10\;\%$ tuning range from the proposed LC-tank VCO. The proposed LC-tank VCO consumes 12 mA at 2.5 V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.37-43
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• 2009

This paper describes a monolithic Darlington-cascade amplifier (DCA) operating at X-band, realized with a 0.35-micron SiGe bipolar process, which provides 45 GHz $f_T$. A conventional cascade amplifier was also designed on the same process and tested to establish a reference. Compared to the reference cascade amplifier, the proposed monolithic amplifier circuit exhibits an improved gain of 2.5 dB and improved output power 1-dB compression point of 5.2 dB with 72% wider bandwidth. Measurement results show 19.5 dB gain, 11.2 dBm 1-dB compression power, and 3.1 GHz bandwidth. These results demonstrate that the Darlington-cascade cell is an advantageous substitute to the conventional cascade amplifier.