• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.152-155
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• 2006

Carbon nitride ($CN_X$) films were prepared by reactive RF magnetron sputtering system at various deposition conditions and the C-V characteristics of MIS(metal - insulator - semiconductor) capacitors that have the structures of Al/$CN_x$/p-Si/Al and Al/$CN_x$/$Si_3N_4$/p-Si/Al were investigated. The resistivity of carbon nitride was above $2.40{\times}10^8{\Omega}{\cdot}cm$ at room temperature. The C-V plot showed a typical capacitance-voltage characteristics of semiconductor insulating layers, while it showed hysterisis due to interface charges. Amorphous carbon nitride (a-$CN_x$) films, that have relatively high resistivity and low dielectric constant could be useful as interlayer insulator materials of VLSI(very large-scale integration) and ULSI(ultra large-scale integration).

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.110-114
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• 2006

Dielectric properties of glass-ceramics with fresnoite(Ba2TiSi208) crystals have been investigated in xK20-(33.3-x)BaO-16.7TiO2-50SiO2 ($0{\leq}x{\leq}20mol%$) glasses. The glassy nature was analyzed by differential thermal analyses and glass-ceramics was variable and control table by the processing parameters like time and temperature. Dielectric constant was measured over a temperature from 125K to 425k at frequencies form 100Hz to 1MHz, and laid in the range 16-10. Piezoelectric constant d33 was measured using a YE2703A d33meter and changed from 5.9 to 4.8pCN-1 with x contents. The spontaneous polarization Ps estimated from the hysteresis at ${\pm}1.2kV$ was ${\sim}0.3\;{\mu}C/cm2$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.84-87
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• 2003

Carbon nitride ($CN_x$) films were prepared by reactive RF magnetron sputtering system with DC bias at various deposition conditions and the electrical properties were investigated. The films were characterized by fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The metal-insulator-semiconductor (MIS) capacitor which has $Al/CN_x/Si$ structure was designed and fabricated to investigate the capacitance-voltage (C-V) characteristics. Dielectric constant of carbon nitride films is very small.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.97-103
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• 2007

Crystallized carbon nitride film that has many stable physical and/or chemical properties has been expected potentially by a new electrical material. However, one of the most significant problems degrading the quality of carbon nitride films is an existence of N-H and C-H bonds from the deposition environment. The possibility of these reactions with hydroxyl group in carbon nitride films, caused by a hydrogen attack, was suggested and proved in our previous reports that this undesired effect could be applied for fabricating micro-humidity sensors. In this study, MIS capacitor and MIM capacitor with $5{\mu}m{\times}5{\mu}m$ meshes were fabricated. As an insulator, carbon nitride film was deposited on a $Si_{3}N_{4}/SiO_{2}/Si$ substrate using reactive magnetron sputtering system, and its dielectric constant, C-V characteristics and humidity sensing properties were investigated. The fabricated humidity sensors showed a linearity in the humidity range of 0 %RH to 80 %RH. These results reveal that MIS and MIM $CN_{X}$ capacitive humidity sensors can be used for Si based micro-humidity sensors.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.